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Type: 
Conference
Description: 
Electro-optical absorption in alpha-Si: H/alpha-SiC x N y multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda= 1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.
Publisher: 
IEEE
Publication date: 
17 Sep 2008
Authors: 

Sandro Rao, Francesco G Della Corte, Caterina Summonte, Francesco Suriano

Biblio References: 
Pages: 279-281
Origin: 
Group IV Photonics, 2008 5th IEEE International Conference on