Type:
Conference
Description:
Electro-optical absorption in alpha-Si: H/alpha-SiC x N y multilayers has been studied in three different planar multistack waveguides realized by PECVD technology. Light absorption is induced at lambda= 1.55 mum by carrier accumulation through the application of electric field across the multiple insulator/semiconductor device.
Publisher:
IEEE
Publication date:
17 Sep 2008
Biblio References:
Pages: 279-281
Origin:
Group IV Photonics, 2008 5th IEEE International Conference on