The HNH center in GaAs 1− y N y that is responsible for the band-gap shift caused by H has been studied by infrared spectroscopy in conjunction with uniaxial stress and by theory. Rich, microscopic details about its canted structure are obtained. The splitting of the infrared lines confirms the C 1 h symmetry of the defect and yields a quantitative value for the canting angle of the center. The reorientation barrier of the defect is estimated from stress-induced reorientation at temperatures near 30 K to be 96 meV.
American Physical Society
2 Jun 2010
Volume: 81 Issue: 23 Pages: 233201
Physical Review B