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In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I–V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric Gaussian-like distribution of the barrier heights after annealing at 700 C, where a low Schottky barrier height (Φ B= 1.05 eV) and an ideality factor n= 1.06 were measured. The low value of the barrier height makes such a WC contact an interesting candidate to reduce the conduction losses in 4H-SiC Schottky diodes. A deeper characterization has been carried out, by monitoring the temperature dependence of the I–V characteristics and the behavior of the relevant parameters Φ B and n. The increase of the barrier height and decrease of the ideality factor with increasing temperature indicated a lateral inhomogeneity of the WC/4H-SiC Schottky contact, which was described by invoking …
IOP Publishing
Publication date: 
9 Nov 2020

Marilena Vivona, Giuseppe Greco, Gabriele Bellocchi, Luca Zumbo, Salvatore Di Franco, Mario Saggio, Simone Rascunà, Fabrizio Roccaforte

Biblio References: 
Volume: 54 Issue: 5 Pages: 055101
Journal of Physics D: Applied Physics