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Steady-state and turn-off switching characteristics of aluminium-implanted 4H-SiC p–i–n diodes designed for high-current density operation, are investigated experimentally and by mean of numerical simulations in the 298–523 K temperature range. The diodes present circular structure with a diameter of 350 μm and employ an anode region with an aluminium depth profile peaking at 6×1019 cm−3 at the surface. The profile edge and the junction depth are located at 0.2 and 1.35 μm, respectively. At room temperature the measured forward current density is close to 370 A/cm2 at 5 V with an ideality factor always less than 2 before high-current injection or device-series resistance became dominant. The transient analysis reveals a strong potential of this diodes for use in high-speed, high-power applications, especially at high temperature, with a very low turn-off recovery time (
Publication date: 
1 Dec 2008

Fortunato Pezzimenti, Francesco G Della Corte, Roberta Nipoti

Biblio References: 
Volume: 39 Issue: 12 Pages: 1594-1599
Microelectronics journal