A novel nanofabrication method based on nitrogen passivation by hydrogen in GaAsN is presented. This approach combines a masked hydrogenation process with a very sharp H forefront in GaAsN. This allows embedding a GaAsN nanometer‐sized region in a GaAs barrier, resulting in the formation of ordered arrays of nanoemitters with marked zero‐dimensional spectroscopic characteristics.
24 Jun 2011
Volume: 23 Issue: 24 Pages: 2706-2710