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Type: 
Journal
Description: 
The inner composition, defect content and morphology of AlGaAs nanowires (NWs) grown on (111)B-GaAs by Au-catalyzed MOVPE is reported. The NWs grow tapered with their [111] axis normal to the substrate. The Raman spectra of single AlGaAs NWs were measured in non-resonant conditions with sub-μ-meter spatial resolution, allowing determination of the Al content. NWs consist of GaAs for TG475°C, namely an AlxGa1-xAs core surrounded by an AlyGa1-yAs (y
Publisher: 
Cambridge University Press
Publication date: 
1 Jan 2011
Authors: 

P Prete, B Buick, E Speiser, N Lovergine, W Richter

Biblio References: 
Volume: 1350
Origin: 
MRS Online Proceedings Library Archive