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In the last two decades there has been growing interest in silicon photonics and in the possibility to integrate new materials to overcome the silicon intrinsic limitations. Erbium has represented a viable solution for the realization of light sources at telecommunications wavelengths opening the path to the investigation of various photonic devices based on rare earth. In this work we investigate a photodetector operating at 1550 nm whose detection mechanism is based on the internal photoemission effect through an Er/Si Schottky junction. The Er/Si junction has been carefully electrically characterized showing a potential barrier and cut-off wavelength of 0.59 eV and 2105 nm, respectively. Moreover, a responsivity of 0.62 mA/W has been measured for a 3 μm-width waveguide at 1550 nm and at reverse voltage of -8 V. Finally, the noise equivalent power of the device has been evaluated as high as 0.53 nW/(Hz …
Publication date: 
1 Dec 2020

T Crisci, L Moretti, M Gioffrè, M Iodice, G Coppola, M Casalino

Biblio References: 
Volume: 16 Issue: 1 Pages: 1-8
Journal of the European Optical Society-Rapid Publications