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Ion implantation provides a precise method of incorporating dopant atoms in semiconductors, provided lattice damage due to the implantation process can be annealed and the dopant atoms located on regular lattice sites. We have undertaken 57Fe emission Mössbauer spectroscopy measurements on GaAs and GaP single crystals following implantation of radioactive 57Mn +  ions, to study the lattice sites of the implanted ions, the annealing of implantation induced damage and impurity–vacancy complexes formed. The Mössbauer spectra were analyzed with four spectral components: an asymmetric doublet (D1) attributed to Fe atoms in distorted environments due to implantation damage, two single lines, S1 assigned to Fe on substitutional Ga sites, and S2 to Fe on interstitial sites, and a low intensity symmetric doublet (D2) assigned to impurity–vacancy complexes. The variations in the extracted …
Springer Netherlands
Publication date: 
1 Jun 2010

H Masenda, D Naidoo, K Bharuth-Ram, HP Gunnlaugsson, G Weyer, WB Dlamini, R Mantovan, R Sielemann, M Fanciulli, TE Mølholt, S Ólafsson, Guido Langouche, K Johnston, Isolde Collaboration

Biblio References: 
Volume: 198 Issue: 1 Pages: 15-22
Hyperfine Interactions