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Epitaxial nickel oxide (NiO) thin films have been grown by Metal Organic Chemical Vapor Deposition on AlGaN/GaN heterostructures. Critical growth parameters have been studied in order to optimize the deposition process of NiO films suitable for applications in GaN-based devices. In particular, a second generation precursor has been used as nickel source, namely the N,N,N′,N′-tetramethylethylenediamine adduct of nickel bis 2-thenoyl-trifluoroacetonate, using different deposition temperatures and oxygen flow values. Optimized operative conditions allowed the growth of epitaxial thin films which exhibited a permittivity of 11.7, close to the bulk value. The electrical characterization of the obtained epitaxial films pointed out to promising dielectric properties for AlGaN/GaN transistor technology.
Publication date: 
31 Jul 2014

Raffaella Lo Nigro, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

Biblio References: 
Volume: 563 Pages: 50-55
Thin Solid Films