In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (eg 2.0× 10 16 1 MeV equivalent neutrons/cm 2). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2× 10 16 neutrons/cm 2. The good agreement between simulation findings and experimental measurements fosters the application of this modeling scheme to the optimization of the next silicon detectors to be used at HL-LHC.