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This paper reviews some recent advances in the application of scanning probe microscopy (SPM) electrical characterization techniques to several critical surface and interface issues in SiC technology. High resolution carrier profiling capabilities in SiC of scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) were employed for several applications. These included two-dimensional (2D) imaging of doped regions in SiC devices (to be used as input for device simulations or as a feedback for device processing) and the quantitative evaluation of the electrically active profiles of P (or N) and Al implanted 4H-SiC after high temperature treatments. Furthermore, the electrical modification of the SiO 2/4H-SiC interface in MOS devices subjected to post-oxide-deposition treatments in NO or N 2 O and POCl 3 have been investigated, providing quantitative information on the electrical …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2014
Biblio References: 
Volume: 778 Pages: 407-413
Materials Science Forum