Extremely efficient phosphorus drive-in into a high resistivity (100) Si substrate is achieved by an advanced doping technology, providing precise control over the amount of electrically active impurity dopants that are introduced into the semiconductor. A phosphorus δ-layer on deglazed and not deglazed silicon surfaces is formed by means of polystyrene homopolymers terminated with a P containing moiety. The P atoms from the δ-layer are injected into the Si substrate by a standard high temperature annealing in a rapid thermal processing (RTP) machine, operating at 1200 °C for 5 s. Depth distribution of the P atoms upon the drive-in procedure is investigated by ToF-SIMS analysis, highlighting the effective capability to inject the dopant impurities into the semiconductor substrate. Room temperature Hall measurements in van der Pauw configuration are performed as a function of the processing conditions to …