The physical, chemical, and electrical properties of various high-κ oxides deposited using atomic layer deposition (ALD) on Ge and GaAs are presented. The choice of precursor combination for ALD, as well as the semiconductor surface preparation before film deposition, play a significant role in tailoring the properties of the high-κ oxide stacks. The results obtained for HfO2, Lu2O3, and Al2O3 high-κ oxides are discussed and compared, when possible, with those reported in the literature for films grown using various deposition techniques. A review of the available data on the band offset of high-κ oxides deposited on Ge and GaAs is also presented.