Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes | IMM Container

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Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+ n 4H-SiC Diodes

Type:

Journal

Description:

Publisher:

Publication date:

1 Jan 2008

Authors:

Francesco Moscatelli, Fabio Bergamini, Antonella Poggi, Mara Passini, Fabrizio Tamarri, Marco Bianconi, Roberta Nipoti

Biblio References:

Volume: 768 Issue: 600 Pages: 1027

Origin:

Materials Science Forum

Link:

http://scholar.google.com/scholar?cluster=6474643577773237193&hl=en&oi=scholarr