Bismuth thin films are a promising material for the technological development of new generation electronic devices. Bismuth results to be a topological insulator material with exceptional surface-state spin and valley properties suitable for spintronics, valleytronics, and quantum computing applications. In this study we present an application of Selective Electrodesorption Based Atomic Layer Deposition (SEBALD) for the synthesis of high crystallinity bismuth metal thin films through the alternating controlled deposition of selenium and bismuth on a monocrystalline silver (111) electrode. The following selective removal of selenium allows the formation of a high crystalline bismuth deposit. Now a Days bismuth ultra-thin films are obtained by vapor phase techniques or from aqueous solution containing organic additives. In most cases, these processes lead to a film with uncontrolled morphology and flat polycrystalline films. Here we explore the possibility to use the Electrochemical Atomic Layer Deposition (E-ALD) to deposit highly ordered ultrathin films from diluted aqueous solutions at room temperature and pressure.