Silicon carbide (SiC) is one of the candidates for the next generation semiconductor materials. Due to the wide bandgap (4H-SiC 3.2 eV), high critical breakdown voltage, high saturated drift velocity, high thermal conductivity, the detector fabricated with SiC has very low dark current, significantly high operating temperature and for UV sensors, insensitivity to visible/IR backgrounds compared to conventional Si detectors. In this paper, recent results on UV, alpha, beta and X-ray 4H-SiC detectors will be presented. High-energy resolution and full charge collection efficiency (CCE) have successfully been demonstrated before irradiation. After irradiation, the alpha and beta detectors continue to be operative, with a high CCE until fluences of the order of some 10 14 n/cm 2. The results for UV detectors show that the 4H-SiC photodetectors are capable of operating as solar-blind UV detector. SiC …