-A A +A
Nanocrystalline silicon embedded in dielectric matrices is currently studied for Si‐photonics, memory devices and solar cells. A common method for the preparation of silicon nanocrystals embedded in oxides is the phase separation of silicon rich oxide (SRO) in SiO2 and Si via thermal annealing. Phase separation, nucleation and crystallization of SRO are known to depend on the thickness of the SRO layer. Here we investigate the structural changes in a sample consisting of alternated nanometer‐thick SRO and SiO2 layers—a so‐called superlattice (SL)—during thermal annealing. Under a thermal treatment the material undergoes a series of modifications due to sintering, phase separation, crystallization and layer mixing. In this work we investigate these transformations in an SL grown by plasma enhanced chemical vapor deposition (PECVD) with several analytical techniques: XPS, variable angle ellipsometric …
John Wiley & Sons, Ltd.
Publication date: 
1 Jun 2010

L Vanzetti, Georg Pucker, S Milita, Mario Barozzi, Mher Ghulinyan, Massimo Bersani

Biblio References: 
Volume: 42 Issue: 6‐7 Pages: 842-845
Surface and Interface Analysis