Transition metal silicides grown on Si substrates show peculiar structural behaviour, due to their rich variety of phases with different stoichiometric compositions. Phases with low electrical resistivity and high thermal stability are needed as contact materials in advanced integrated circuits while nickel silicide is the main candidate as future material for interconnects. Recently, structural investigations on thin silicide films on Si (100) have characterized novel forms of silicide texturing. De Taverniern et al.[1] found grains with typical preferred orientation: low-index NiSi are aligned to Si (110) planes across the interface, regardless of the crystallographic plane parallel to Si (100) interface. A different structure has been detected by Alberti et al. in NiSi [2] and Ni2Si [3]: plane matching across interface is achieved only in the core regions (10nm), while planes continously bend outside them. In both cases, alignment of planes …