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Article PreviewArticle PreviewArticle PreviewThe choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3 to 6 along< 110> and< 11>. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111) Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2009

Andrea Severino, Ruggero Anzalone, Corrado Bongiorno, M Italia, Giuseppe Abbondanza, Massimo Camarda, LMS Perdicaro, Giuseppe Condorelli, Marco Mauceri, Francesco La Via

Biblio References: 
Volume: 615 Pages: 149-152
Materials Science Forum