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Ultrafast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening models for describing self-interstitial cluster growth. We have carried out molecular dynamics simulations in combination with focused experiments in order to demonstrate that at temperatures close to the melting point, self-interstitial rich Si is driven into dense liquidlike droplets that are highly mobile within the solid crystalline Si matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {001} loops through a liquid-to-solid phase transition in the nanosecond time scale.
American Physical Society
Publication date: 
17 Nov 2017

Luis A Marqués, María Aboy, Iván Santos, Pedro López, Fuccio Cristiano, Antonino La Magna, Karim Huet, Toshiyuki Tabata, Lourdes Pelaz

Biblio References: 
Volume: 119 Issue: 20 Pages: 205503
Physical Review Letters