The development of new generation nonvolatile memories, such as Phase Change Memories (PCMs) and Resistive-RAMs (ReRAMs), calls for accurate and controllable programming pulses, which are fundamental to adequately characterize the memory cell. Indeed, the final cell state depends on parameters of the applied programming pulse (s), such as amplitude, duration, and fall time. The performance and the flexibility of conventional automated test equipment (ATE) should be enhanced to carry out reliable tests on different cell implementations, which may have different architectures or material compositions. Aiming at this goal, we designed, fabricated, and experimentally evaluated an on-wafer pulse generator, controlled by commercial ATE, which is able to provide voltage pulses with programmable amplitude, duration, and fall time. A key design requirement …