CMOS technology exploitation is crucial to fabricate in a reliable manner nanodevices where different qubits based on spin degree of freedom can be implemented. One on the goals...
Phase change materials
Phase change materials are interesting candidates for emerging applications in memories, photonics, displays, ovonic threshold switch selectors and non von Neumann...
The activity regards characterization and simulation of transport in silicon nanostructures and nanodevices in the form of quantum dots (0D) or nanowires (1D), for extremely low-power...
Plasmonic effects in metal nanostructures have known an increasing employment in the realization of sensing devices for gas detection. Surface plasmon polaritons (SPPs) are evanescent...
IMM of Bologna studies the optimization of the electrical doping of single crystal 3C- and 4H-SiC poly-types by ion implantation. When the fabrication of SiC electronic devices is concerned, the...
The interest in assembling metal nanoparticles (NPs) onto conductive transparent substrates, as fluorine doped-tin-oxide (SnO2:F, FTO), has increased as the resulting interfaces show interesting...
Development of new bottom-up approaches for the synthesis of functional nanostructured materials with typical feature dimension well below 20 nm. The focus of this research...
In the actual Power Devices market, 4H-SiC is the emerging material. The main limitations for an extensive application of this SiC polytype in many power applications are the cost of the material...
Light detection will be attempted by using Si and Ge quantum structures embedded in insulating matrices or by low-cost synthesized ZnO nanostructures.
The first activity is focused on the...
The use of transparent conductive oxides (TCO) is one of the most critical issues in several fields: photovoltaics, transparent electronics, smart windows, touch screens. Indium free and ultra-...