Special Issue "SiC Applications Outside Power Electronic Devices"

Date: 
2022-01-28

Dear Colleagues,

Newly emerging semiconductors, such as silicon carbide (SiC), are attractive for advanced power devices, due to their superior physical properties. Owing to the remarkable improvement in SiC wafer quality and the progress in device technology, high-voltage SiC Schottky barrier diodes (SBDs) and field-effect transistors (FETs), which significantly outperform Si counterparts, have been demonstrated and, in recent years, the market of SiC power devices has increased considerably thanks to the application of electric vehicles.

Progetto PRO(wellbeing)STATE Sviluppo di un sistema innovativo per la gestione globale della salute del paziente con tumore prostatico

Periodo dal 01/10/2019 al 23/03/2021

Partner 

 

Il Progetto: Obiettivi e risultati

Gli obiettivi finali comprendono:

a) lo sviluppo di strumenti innovativi per la diagnosi e terapia del tumore prostatico, dotati di maggiore sensibilità e specificità, in grado di fornire un quadro diagnostico più chiaro e accurato e aprire a nuove modalità terapeutiche soprattutto per i casi resistenti o non più responsivi alle terapie attualmente utilizzate;

 

Source: 
Lecce UNIT

In memory of Vito Raineri

The Institute for Microelectronics and Microsystems remembers his colleague and friend Vito Raineri, who prematurely passed away ten years ago, in January 2012.

Special Issue "Innovative Methods for Semiconductor Doping"

Dear Colleagues,

This Special Issue will welcome high quality experimental and modeling studies on the recent developments in advanced semiconductor doping techniques. The list of key topics is reported in the following:

Special Issue: Nanoparticles and nanomaterials

Dear Colleagues,

This special issue will welcome original research articles and reviews in the following research areas:

Visita della Presidente del CNR, prof.ssa Maria Chiara Carrozza, presso la sede IMM-CNR di Catania

Il 18 novembre 2021 la Presidente Maria Chiara Carrozza  e il Direttore Generale Giuseppe Colpani hanno visitato  l'IMM.

Epitaxial Transition Metal dichalcogenides Onto wide bandgap hexagonal Semiconductorsfor advanced electronics

The european project ETMOS, coordinated by CNR-IMM in Catania, has been funded by MUR in the framework of the 2019 FlagERA JTP call "Graphene – Applied Research and Innovation".

The project aims at developing high electronic quality transition metal dichalcogenides (TMDs) onto wide bandgap (WBG) hexagonal semiconductors (SiC, GaN, AlN, AlGaN alloys).

More in details, the specific objectives of the project are:

Source: 
Catania HQ

SIMPLE-MOLD

L’Istituto autonomo Villa Adriana e Villa d’Este – VILLAE, in partnership con il Dipartimento di Ingegneria Elettronica dell'Università  Tor Vergata e con l'Istituto per la Microelettronica e Microsistemi del CNR, ha ottenuto un finanziamento nella Call per il Distretto Tecnologico per le nuove tecnologie applicate ai beni e alle attività culturali, con il Progetto di Ricerca e Sviluppo Simple Mold, Sistema Integrato a Microonde per la diagnostica, il rilevamento e l’intervento conservativo per il risanamento dell’umidità presso la Mensa Ponderaria di Tivoli.

Source: 
Rome UNIT

Silicon Doping by Polymer Grafting: Size Distribution Matters

Here is  a new paper that has been just published on ACS Applied Polymer Materials. Phosphorus δ-layers in SiO2 have been prepared by means of poly(methyl methacrylate) terminated with a phosphorus-containing moiety acting as an anch

A New European Project on Gallium Nitride – GaN4AP – started in June 2021

The three years European project GaN4AP (GaN for Advanced Power Applications), funded in the framework of the EU call H2020-ECSEL-2020-1-IA-two-stage, started on June 1st, 2021.

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