Dear Colleagues,

Newly emerging semiconductors, such as silicon carbide (SiC), are attractive for advanced power devices, due to their superior physical properties. Owing to the remarkable improvement in SiC wafer quality and the progress in device technology, high-voltage SiC Schottky barrier diodes (SBDs) and field-effect transistors (FETs), which significantly outperform Si counterparts, have been demonstrated and, in recent years, the market of SiC power devices has increased considerably thanks to the application of electric vehicles.

In recent years, several interesting applications of this material in different fields (MEMS, optical devices, radiation detectors, biomedical devices, quantum devices, high temperature electronics, photovoltaic, water splitting) have been proposed thanks to the outstanding mechanical, optical, and radiation hardness, as well as biocompatibility properties of this material.

This Special Issue seeks to showcase research papers, short communications, and review articles that focus on these new applications outside the power electronics mainstream. The material and devices characterization, the design, the processing, and properties simulations for these new applications are all inside the scopes of this Special Issue. 

Prof. Dr. Francesco La Via
Dr. Alberto Roncaglia
Guest Editors


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