GaN4AP - GaN for Advanced Power Applications

The European project GaN4AP aims at making GaN-based electronics the main technology in all power converter systems.To reach this ambitious goal, the project has four main objectives:

 

1. Develop innovative power conversion systems based on state-of-the-art GaN-based High Electron Mobility Transistors (HEMTs) with 99% power conversion efficiency.

2. Develop innovative Aluminium Scandium Nitride (AlScN) with outstanding physical properties for highly efficient HEMTs with much higher current  and power density than existing transistors.

Source: 
Catania HQ

Inside the brush: partition by molecular weight in grafting to reactions from melt

We have just published a new paper on Polymer Chemistry investigating the grafting to process of OH terminated polymers from melt. Our results highlight that fundamental aspects of the polymer brush formation have not been adequately analyzed yet.

Congresso dell'IMM

Il CNR-IMM compie 20 anni, un importante traguardo per l'Istituto. In occasione dell’evento, l'IMM ha organizzato un Congresso che si è svolto dal 25 al 27 Ottobre 2021 al Four Points Sheraton, a Catania, sede principale dell’Istituto.

Insights into spin-charge conversion phenomena in Sb2Te3 topological insulator

Large-area chemically grown Sb2Te3 topological insulator is exploited to generate spin-charge conversion in Fe/Au/Sb2Te3.

Large Spin-to-Charge Conversion at room temperature in the Sb2Te3 Topological Insulator

By conducting room temperature spin pumping ferromagnetic resonance, we demonstrate a high spin-to-charge conversion occurring in the large area Sb2Te3 topological insulator epitaxially-grown by metal-organic chemical vapor deposition on 4” Si(111).

Ultrathin Silicon Nanowires for Optical and Electrical Nitrogen Dioxide Detection

Authors: 

Dario Morganti, Antonio Alessio Leonardi, Maria José Lo Faro, Gianluca Leonardi, Gabriele Salvato, Barbara Fazio, Paolo Musumeci, Patrizia Livreri, Sabrina Conoci, Giovanni Neri, Alessia Irrera

Failure Strength Weibull Analysis of 4H-SiC Die through a 3-PB test

Authors: 

Antonio Landi, Aye Aye Mon, Laura Liaci, Alessandro Sitta, Michele Calabretta, Antonella Sciuto, Giuseppe D’Arrigo, Marco Renna, Vincenzo Vinciguerra

Conformationally rigid molecular and polymeric naphthalene-diimides containing C6H6N2 constitutional isomers

Authors: 

Abbinante Vincenzo Mirco, Gonzalo García-Espejo, Gabriele Calabrese, Silvia Milita, Luisa Barba, Diego Marini, Candida Pipitone, Francesco Giannici, Antonietta Guagliardi, Norberto Masciocchi

NiMoO4@Co3O4 Core–Shell Nanorods: In Situ Catalyst Reconstruction toward High Efficiency Oxygen Evolution Reaction

Authors: 

Getachew Solomon, Anton Landström, Raffaello Mazzaro, Matteo Jugovac, Paolo Moras, Elti Cattaruzza, Vittorio Morandi, Isabella Concina, Alberto Vomiero

Electrical instability in short channel organic thin-film transistors induced by lucky-polaron mechanism

Authors: 

L Mariucci, G Giusi, M Rapisarda, A La Magna, S Calvi, A Valletta, G Fortunato

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