The european project ETMOS, coordinated by CNR-IMM in Catania, has been funded by MUR in the framework of the 2019 FlagERA JTP call "Graphene – Applied Research and Innovation".

The project aims at developing high electronic quality transition metal dichalcogenides (TMDs) onto wide bandgap (WBG) hexagonal semiconductors (SiC, GaN, AlN, AlGaN alloys).

More in details, the specific objectives of the project are:

L’Istituto autonomo Villa Adriana e Villa d’Este – VILLAE, in partnership con il Dipartimento di Ingegneria Elettronica dell'Università  Tor Vergata e con l'Istituto per la Microelettronica e Microsistemi del CNR, ha ottenuto un finanziamento nella Call per il Distretto Tecnologico per le nuove tecnologie applicate ai beni e alle attività culturali, con il Progetto di Ricerca e Sviluppo Simple Mold, Sistema Integrato a Microonde per la diagnostica, il rilevamento e l’intervento conservativo per il risanamento dell’umidità presso la Mensa Ponderaria di Tivoli.

The European project GaN4AP aims at making GaN-based electronics the main technology in all power converter systems.To reach this ambitious goal, the project has four main objectives:

1. Develop innovative power conversion systems based on state-of-the-art GaN-based High Electron Mobility Transistors (HEMTs) with 99% power conversion efficiency.

2. Develop innovative Aluminium Scandium Nitride (AlScN) with outstanding physical properties for highly efficient HEMTs with much higher current  and power density than existing transistors.