Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN

Authors: 

G Salviati, F Rossi, N Armani, L Lazzarini, L Nasi, V Grillo, A Passaseo, R Cingolani, M Longo, O Martinez

Synaptic and neuromorphic functions: general discussion

Authors: 

Alexandra I Berg, Stefano Brivio, Simon Brown, Geoffrey Burr, Sweety Deswal, Jonas Deuermeier, Ella Gale, Hyunsang Hwang, Daniele Ielmini, Giacomo Indiveri, Anthony J Kenyon, Asal Kiazadeh, Itir Köymen, Michael Kozicki, Yang Li, Daniel Mannion, Themis Prodromakis, Carlo Ricciardi, Sebastian Siegel, Maximilian Speckbacher, Ilia Valov, Wei Wang, R Stanley Williams, Dirk Wouters, Yuchao Yang

Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD

Authors: 

Raimondo Cecchini, Roberto Mantovan, Claudia Wiemer, Lucia Nasi, Laura Lazzarini, Massimo Longo

Raman spectrum of epitaxial silicene

Authors: 

Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle

The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Authors: 

Alessandro Molle, Athanasios Dimoulas, Guy Le Lay, Max Lemme

Ab initio study of the structural, electronic, magnetic, and optical properties of silicene nanoribbons

Authors: 

Matteo Ferri, Guido Fratesi, Giovanni Onida, Alberto Debernardi

Enhancement of the Dzyaloshinskii-Moriya interaction and domain wall velocity through interface intermixing in Ta/CoFeB/MgO

Authors: 

L Herrera Diez, M Voto, A Casiraghi, M Belmeguenai, Y Roussigné, G Durin, A Lamperti, R Mantovan, V Sluka, V Jeudy, YT Liu, A Stashkevich, SM Chérif, J Langer, B Ocker, L Lopez-Diaz, D Ravelosona

ev and A. Stesmans

Authors: 

E Scalise, M Houssa, G Pourtois, VV Afanas

MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires

Authors: 

M Longo, S Cecchi, S Selmo, M Fanciulli, C Wiemer, J-L Battaglia, A Saci, A Kusiak

Improved Performance of In0. 53Ga0. 47As-Based Metal–Oxide–Semiconductor Capacitors with Al: ZrO2 Gate Dielectric Grown by Atomic Layer Deposition

Authors: 

Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

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