(Invited) Ion Implanted Bipolar Junction in 4H-SiC Electronics Devices: Relevance of the 1950 C Temperature for Post Implantation Annealing

Authors: 

Roberta Nipoti

Resonant-cavity-enhanced single photon avalanche diodes on double silicon-on-insulator substrates

Authors: 

Massimo Ghioni, Giacomo Armellini, Piera Maccagnani, Ivan Rech, Matthew K Emsley, M Selim Ünlü

Characterization of an electrically induced refractive index change in a hydrogenated amorphous silicon multistack waveguide

Authors: 

Sandro Rao, Giuseppe Coppola, Mariano Gioffrè, Caterina Summonte, Francesco G Della Corte

Metal oxide nanowires for optical gas sensing

Authors: 

C Baratto, S Bianchi, E Comini, G Faglia, M Ferroni, G Sberveglieri

Defect-induced homogeneous amorphization of silicon: the role of defect structure and population

Authors: 

Giorgio Lulli, Eros Albertazzi, Simone Balboni, Luciano Colombo

Improving doping efficiency of P+ implanted ions in 4H-SiC

Authors: 

Roberta Nipoti, Anindya Nath, Stefano Cristiani, Michele Sanmartin, Mulpuri V Rao

Graphene solutions

Authors: 

Amélie Catheline, Cristina Vallés, Carlos Drummond, Luca Ortolani, Vittorio Morandi, Massimo Marcaccio, Matteo Iurlo, Francesco Paolucci, Alain Pénicaud

km Simplex-coded BOTDA sensor for distributed strain and temperature measurements with 1 m spatial resolution”

Authors: 

MA Soto, G Bolognini, F Di Pasquale, L Thévenaz

The Dielectric Function and Spectrophotometry: From Bulk to Nanostructures

Authors: 

Caterina Summonte, J Valenta, S Mirabella

Basal Plane Dislocation Mitigation Using High Temperature Annealing in 4H-SiC Epitaxy

Authors: 

Nadeemullah A Mahadik, Anindya Nath, Eugene A Imhoff, Robert E Stahlbush, Roberta Nipoti

Pages