Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Authors: 

Filippo Giannazzo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, Vito Raineri

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

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R Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, SA Krishnan, C Young, Rino Choi, Gennadi Bersuker, James H Stathis

Epitaxial Growth on 150 mm 2° off Wafers

Authors: 

Francesco La Via, Nicolo’ Piluso, Patrick Fiorenza, Marco Mauceri, Carmelo Vecchio, Antonino Pecora, Danilo Crippa

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

Authors: 

Andrea Severino, M Mauceri, R Anzalone, A Canino, N Piluso, C Vecchio, M Camarda, F La Via

Comprehensive model for progressive breakdown in nFETs and pFETs

Authors: 

S Lombardo, E Wu, J Stathis

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

Authors: 

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Cristina Tudisco, Guglielmo Guido Condorelli, Salvatore Di Franco, Fabrizio Roccaforte, Raffaella Lo Nigro

Silicon photomultipliers for nuclear medical imaging applications

Authors: 

Massimo Mazzillo, Giovanni Condorelli, Delfo Sanfilippo, Alessandro Piazza, Giusy Valvo, Beatrice Carbone, Giorgio Fallica, Alfio Pappalardo, Luigi Cosentino, Paolo Finocchiaro, Michele Corselli, Giuseppe Suriani, Salvatore Lombardo, Sergio Billotta, Massimiliano Belluso, Giovanni Bonanno

Chapter 4-SiC Characterization-4.3 Defects-Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

Authors: 

A Ruggiero, M Zimbone, F Roccaforte, S Libertino, F La Via, R Reitano, L Calcagno

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Authors: 

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

In-depth investigation of Hf-based high-k dielectrics as storage layer of charge-trap NVMs

Authors: 

J Buckley, M Bocquet, G Molas, M Gely, P Brianceau, N Rochat, E Martinez, F Martin, H Grampeix, JP Colonna, A Toffoli, V Vidal, C Leroux, G Ghibaudo, G Pananakakis, C Bongiorno, D Corso, S Lombardo, B DeSalvo, S Deleonibus

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