Physical mechanism of progressive breakdown in gate oxides

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Felix Palumbo, Salvatore Lombardo, Moshe Eizenberg

Very high growth rate epitaxy processes with chlorine addition.

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Danilo Crippa Francesco La Via, Stefano Leone, Marco Mauceri

Carrier distribution in quantum nanostructures by scanning capacitance microscopy

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F Giannazzo, V Raineri, A La Magna, S Mirabella, G Impellizzeri, AM Piro, F Priolo, E Napolitani, SF Liotta

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

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Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

B-doping in Ge by excimer laser annealing

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G Impellizzeri, E Napolitani, S Boninelli, G Fisicaro, M Cuscunà, R Milazzo, A La Magna, G Fortunato, F Priolo, V Privitera

Systematic first principles calculations of the effects of stacking fault defects on the 4H-SiC band structure

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Massimo Camarda, Pietro Delugas, Andrea Canino, Andrea Severino, Nicolò Piluso, Antonino La Magna, Francesco La Via

High precision resistor and trimming method thereof

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Stefania Maria Serena Privitera, Antonello Santangelo, , Antonello Santangelo

Structure of the oxide damage under progressive breakdown

Authors: 

Felix Palumbo, G Condorelli, Salvatore Lombardo, Kin Leong Pey, CH Tung, LJ Tang

Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films

Authors: 

A Severino, A La Magna, R Anzalone, C Bongiorno, E Rimini, F La Via

4H-SiC Schottky photodiodes for ultraviolet light detection

Authors: 

Massimo Mazzillo, Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

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