CaCu3Ti4O12, a Novel Material for Capacitive Applications: Thin Film Growth and Characterization

Authors: 

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

Role of oxygen on the electrical activation of B in Ge by excimer laser annealing

Authors: 

G Impellizzeri, E Napolitani, R Milazzo, S Boninelli, M Cuscunà, G Fisicaro, A La Magna, G Fortunato, F Priolo, V Privitera

Growth of wide bandgap materials

Authors: 

A Severino, C Locke, R Anzalone, M Camarda, N Piluso, AL Magna, S Saddow, G Abbondanza, G D’Arrigo, FL Via

Drift mobility in 4H-SiC Schottky diodes

Authors: 

F La Via, G Galvagno, F Roccaforte, A Ruggiero, L Calcagno

Study of the evolution of basal plane dislocations during epitaxial growth: role of the surface kinetics

Authors: 

Massimo Camarda, Antonino La Magna, Andrea Canino, Francesco La Via

Optimized silicon photomultipliers with optical trenches

Authors: 

R Pagano, D Corso, S Lombardo, S Libertino, G Valvo, D Sanfilippo, A Russo, PG Fallica, A Pappalardo, P Finocchiaro

Integrated circuits with backside metalization and production method thereof

Authors: 

Alessandra Alberti, Antonello Santangelo, , Antonello Santangelo

He induced nanovoids for point-defect engineering in B-implanted crystalline Si

Authors: 

E Bruno, S Mirabella, F Priolo, E Napolitani, C Bongiorno, V Raineri

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Authors: 

Ruggero Anzalone, Marco Salanitri, Simona Lorenti, Alberto Campione, Nicolò Piluso, Francesco La Via, Patrick Fiorenza, Cinzia M Marcellino, Giuseppe Arena, Salvo Coffa

Luminescence properties of SiOxNy irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment

Authors: 

Rosa Ruggeri, Fortunato Neri, Antonella Sciuto, Vittorio Privitera, Corrado Spinella, Giovanni Mannino

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