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Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions

Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via

2009-01-01

Biblio references: Volume: 600 Pages: 127-130

Origin: Materials Science Forum

Growth and characterization of Metal Oxide Nanowires for Sensing and Advanced Applications

Elisabetta Comini, Isabella Concina, Matteo Ferroni, Guido Faglia, Alberto Vomiero, Giorgio Sberveglieri

2009-01-01

Biblio references: Pages: ---

Origin: International Conference Material Science in the Age of Nano

Micro-Raman investigation of few graphene layers grown on 6H-SiC

Jean Camassel, Jean Roch Huntzinger, Antoine Tiberj, M Syväjärvi, Rositza Yakimova, F Giannazzo

2009-01-01

Biblio references:

Origin: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09)

L’approccio narrativo nella formazione degli studenti infermieri: valutazione di un’esperienza

S Lombardo, Lorenza Garrino

2009-01-01

Biblio references: Volume: 9 Pages: 135-135

Origin: Medicina narrativa e malattie rare

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Francesco Moscatelli, Roberta Nipoti, Sandro Solmi, Stefano Cristiani, Michele Sanmartin, Antonella Poggi

2009-01-01

Biblio references: Volume: 600 Pages: 699-702

Origin: Materials Science Forum

Residual stress measurement on hetero-epitaxial 3C-SiC films

Ruggero Anzalone, Christopher Locke, Andrea Severino, Davide Rodilosso, Cristina Tringali, Gaetano Foti, Stephen E Saddow, Francesco La Via, Giuseppe D'Arrigo

2009-01-01

Biblio references: Volume: 615 Pages: 629-632

Origin: Materials Science Forum

In Vitro effects of exposure to radiofrequency on DNA damage induced by high-LET ionising radiation.

Lorenzo Manti, Rita Massa, Luigi Campajola, A D’Arco, P Scampoli, G Grossi

2009-01-01

Biblio references: Pages: 163-163

Origin: 37th annual meeting of the European Radiation Research Society (ERRS)

Nanoscale current transport at graphene/SiC interface by scanning probe microscopy

S Sonde, F Giannazzo, V Raineri, Rositza Yakimova, Jean Camassel

2009-01-01

Biblio references:

Origin: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC'09)

CV and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+ n 4H-SiC Diodes

Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini

2009-01-01

Biblio references: Volume: 615 Pages: 469-472

Origin: Materials Science Forum

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

Torben Esmann, R Mantovan, Haraldur Pall Gunnlaugsson

2009-01-01

Biblio references:

Origin: 25th International Conference on Defects on Semiconductors

Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions

Growth and characterization of Metal Oxide Nanowires for Sensing and Advanced Applications

Micro-Raman investigation of few graphene layers grown on 6H-SiC

L’approccio narrativo nella formazione degli studenti infermieri: valutazione di un’esperienza

Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation

Residual stress measurement on hetero-epitaxial 3C-SiC films

In Vitro effects of exposure to radiofrequency on DNA damage induced by high-LET ionising radiation.

Nanoscale current transport at graphene/SiC interface by scanning probe microscopy

CV and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+ n 4H-SiC Diodes

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

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Scientific Productions

Units in Italy

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