2009 | IMM Container

TE Mølholt, R Mantovan, HP Gunnlaugsson, K Bharuth-Ram, M Fanciulli, HP Gíslason, K Johnston, Y Kobayashi, Guido Langouche, H Masenda, D Naidoo, S Ólafsson, R Sielemann, G Weyer

2009-12-15

Biblio references: Volume: 404 Issue: 23-24 Pages: 4820-4822

Origin: Physica B: Condensed Matter

Ab initio study of the magnetic interaction of Co and Ni doped ZnO with intrinsic vacancies

Alberto Debernardi, Marco Fanciulli

2009-12-15

Biblio references: Volume: 404 Issue: 23-24 Pages: 4791-4793

Origin: Physica B: Condensed Matter

Compact silicon double and triple dots realized with only two gates

Mathieu Pierre, Romain Wacquez, Benoit Roche, Xavier Jehl, Marc Sanquer, Maud Vinet, Enrico Prati, Matteo Belli, Marco Fanciulli

2009-12-14

Biblio references: Volume: 95 Issue: 24 Pages: 242107

Origin: Applied physics letters

Insight into the formation mechanism of one-dimensional indium oxide wires

Alberto Vomiero, Matteo Ferroni, Elisabetta Comini, Guido Faglia, Giorgio Sberveglieri

2009-12-14

Biblio references: Volume: 10 Issue: 1 Pages: 140-145

Origin: Crystal growth & design

Ion-irradiation-induced selective bond rearrangements in amorphous GeTe thin films

R De Bastiani, E Carria, S Gibilisco, MG Grimaldi, AR Pennisi, A Gotti, A Pirovano, R Bez, E Rimini

2009-12-09

Biblio references: Volume: 80 Issue: 24 Pages: 245205

Origin: Physical Review B

Irradiation damage in graphene on SiO 2 probed by local mobility measurements

Oxygen optical gas sensing by reversible fluorescence quenching in photo-oxidized poly (9, 9-dioctylfluorene) thin films

Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures

Towards an accurate description of the electronic properties of the biphenylthiol/gold interface: The role of exact exchange

La disciplina dei militari impegnati all’estero in missioni umanitarie: in margine al caso Lozano

Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

Ab initio study of the magnetic interaction of Co and Ni doped ZnO with intrinsic vacancies

Compact silicon double and triple dots realized with only two gates

Insight into the formation mechanism of one-dimensional indium oxide wires

Ion-irradiation-induced selective bond rearrangements in amorphous GeTe thin films

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili

You are here

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili