Journals | IMM Container

On direct-writing methods for electrically contacting GaAs and Ge nanowire devices

Guannan Chen, Eric M Gallo, Jonadan Burger, Bahram Nabet, Adriano Cola, Paola Prete, Nico Lovergine, Jonathan E Spanier

2010-05-31

Biblio references: Volume: 96 Issue: 22 Pages: 223107

Origin: Applied Physics Letters

Influence of the oxidizing species on the Ge dangling bonds at the (100) Ge/GeO 2 interface

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

2010-05-31

Biblio references: Volume: 96 Issue: 22 Pages: 222110

Origin: Applied physics letters

Low-temperature, self-catalyzed growth of Si nanowires

Massimo Cuscunà, Annalisa Convertino, Luigi Mariucci, Guglielmo Fortunato, Laura Felisari, Giuseppe Nicotra, Corrado Spinella, Alessandro Pecora, Faustino Martelli

2010-05-28

Biblio references: Volume: 21 Issue: 25 Pages: 255601

Origin: Nanotechnology

A programmable interface circuit for an ultralow power gas sensor

Lucia Bissi, Michele Cicioni, Pisana Placidi, Stefano Zampolli, Ivan Elmi, Andrea Scorzoni

2010-05-24

Biblio references: Volume: 60 Issue: 1 Pages: 282-289

Origin: IEEE Transactions on Instrumentation and Measurement

A programmable interface circuit for an ultralow power gas sensor

Lucia Bissi, Michele Cicioni, Pisana Placidi, Stefano Zampolli, Ivan Elmi, Andrea Scorzoni

2010-05-24

Biblio references: Volume: 60 Issue: 1 Pages: 282-289

Origin: IEEE Transactions on Instrumentation and Measurement

Mn-induced growth of InAs nanowires

F Jabeen, M Piccin, L Felisari, V Grillo, G Bais, S Rubini, F Martelli, F d’Acapito, M Rovezzi, F Boscherini

2010-05-19

Biblio references: Volume: 28 Issue: 3 Pages: 478-483

Origin: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

A novel approach to data analysis for semiconductor metal-oxide gas sensors in chromatographic systems

Andrea Adami, Elisa Morganti, Leandro Lorenzelli, L Francioso, P Siciliano

2010-05-18

Biblio references: Volume: 147 Issue: 1 Pages: 1-4

Origin: Sensors and Actuators B: Chemical

Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

MA Signore, D Valerini, A Rizzo, L Tapfer, L Capodieci, A Cappello

2010-05-18

Biblio references: Volume: 43 Issue: 22 Pages: 225401

Origin: Journal of Physics D: Applied Physics

Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

E Napolitani, G Bisognin, E Bruno, M Mastromatteo, GG Scapellato, S Boninelli, D De Salvador, S Mirabella, C Spinella, A Carnera, F Priolo

2010-05-17

Biblio references: Volume: 96 Issue: 20 Pages: 201906

Origin: Applied Physics Letters

Atomic force microscopy study of the growth mechanisms of nanostructured sputtered Au film on Si (111): evolution with film thickness and annealing time

F Ruffino, MG Grimaldi

2010-05-15

Biblio references: Volume: 107 Issue: 10

Origin: Journal of Applied Physics

On direct-writing methods for electrically contacting GaAs and Ge nanowire devices

Influence of the oxidizing species on the Ge dangling bonds at the (100) Ge/GeO 2 interface

Low-temperature, self-catalyzed growth of Si nanowires

A programmable interface circuit for an ultralow power gas sensor

A programmable interface circuit for an ultralow power gas sensor

Mn-induced growth of InAs nanowires

A novel approach to data analysis for semiconductor metal-oxide gas sensors in chromatographic systems

Investigation of the physical properties of ion assisted ZrN thin films deposited by RF magnetron sputtering

Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge

Atomic force microscopy study of the growth mechanisms of nanostructured sputtered Au film on Si (111): evolution with film thickness and annealing time

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