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Dense arrays of Co nanocrystals epitaxially grown on ion-patterned Cu (110) substrates

Alessandro Molle, F Buatier de Mongeot, C Boragno, R Moroni, F Granone, D Sekiba, R Buzio, U Valbusa, R Felici, C Quirós

2005-04-04

Biblio references: Volume: 86 Issue: 14 Pages: 141906

Origin: Applied Physics Letters

Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra

G Lulli, E Albertazzi, M Bianconi, A Satta, S Balboni, Luciano Colombo, A Uguzzoni

2005-04-01

Biblio references: Volume: 230 Issue: 1-4 Pages: 613-618

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

DNA arrays, electronic noses and tongues, biosensors and receptors for rapid detection of toxigenic fungi and mycotoxins: A review

A Logrieco, DWM Arrigan, K Brengel-Pesce, P Siciliano, I Tothill

2005-04-01

Biblio references: Volume: 22 Issue: 4 Pages: 335-344

Origin: Food additives and contaminants

Channeling characterization of defects in silicon: an atomistic approach

M Bianconi, E Albertazzi, S Balboni, Luciano Colombo, G Lulli, A Satta

2005-04-01

Biblio references: Volume: 230 Issue: 1-4 Pages: 185-192

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Ion sputtered surfaces as templates for carbon nanotubes alignment and deformation

Francesca Granone, V Mussi, A Toma, S Orlanducci, ML Terranova, C Boragno, F Buatier de Mongeot, U Valbusa

2005-04-01

Biblio references: Volume: 230 Issue: 1-4 Pages: 545-550

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

A Tight Binding study of defects in nanocrystalline SnO 2

AM Mazzone, V Morandi

2005-04-01

Biblio references: Volume: 33 Issue: 1-3 Pages: 346-350

Origin: Computational materials science

Half-metallic Mn-doped Si (x) Ge (1− x) alloys: a first principles study

MARIA Peressi, A Debernardi, S Picozzi, F Antoniella, A Continenza

2005-04-01

Biblio references: Volume: 33 Issue: 1-3 Pages: 125-131

Origin: Computational materials science

Fabrication of nanocrystal memories by ultra low energy ion implantation

Nikolay Cherkashin, Caroline Bonafos, H Coffin, Marzia Carrada, S Schamm, Gérard Ben Assayag, D Chassaing, P Dimitrakis, P Normand, M Perego, M Fanciulli, T Muller, KH Heinig, Alain Claverie

2005-04-01

Biblio references: Volume: 2 Issue: 6 Pages: 1907-1911

Origin: physica status solidi (c)

Influence of point defects injection on the stability of a supersaturated Ga‐Si solid solution

Lucia Romano, Alberto M Piro, Maria G Grimaldi, Giorgia M Lopez, Vincenzo Fiorentini

2005-04-01

Biblio references: Volume: 71 Issue: 16 Pages: 165201

Origin: Physical Review B

Interaction between implanted fluorine atoms and point defects in preamorphized silicon

G Impellizzeri, JHR dos Santos, S Mirabella, E Napolitani, A Carnera, F Priolo

2005-04-01

Biblio references: Volume: 230 Issue: 1-4 Pages: 220-224

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Dense arrays of Co nanocrystals epitaxially grown on ion-patterned Cu (110) substrates

Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra

DNA arrays, electronic noses and tongues, biosensors and receptors for rapid detection of toxigenic fungi and mycotoxins: A review

Channeling characterization of defects in silicon: an atomistic approach

Ion sputtered surfaces as templates for carbon nanotubes alignment and deformation

A Tight Binding study of defects in nanocrystalline SnO 2

Half-metallic Mn-doped Si (x) Ge (1− x) alloys: a first principles study

Fabrication of nanocrystal memories by ultra low energy ion implantation

Influence of point defects injection on the stability of a supersaturated Ga‐Si solid solution

Interaction between implanted fluorine atoms and point defects in preamorphized silicon

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Scientific Productions

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