Primary tabs

Fabrizio Roccaforte received the M.Sc. Degree in Physics from the University of Catania (Italy) in 1996, and the PhD from the University of Göttingen (Germany) in 1999. In 2000/2001 he was visiting scientist at the University of Göttingen, and advisor at STMicroelectronics (Italy). In December 2001 he joined CNR-IMM as a Researcher, where he became Senior Researcher in 2007. His research interests are in the field of wide band gap semiconductors (e.g., SiC, GaN,..) materials and devices processing for power electronics devices. He is co-author of more than 250 papers in international journals and conference proceedings, several review articles, 5 book chapters, 3 patents, and he has given several invited talks and lectures on SiC and GaN at international conferences. He has been chairman of international conferences on WBG semiconductors (HeteroSiC-WASMPE 2009, WOCSDICE 2011, ICSCRM2015), and he is member of the Steering Committee of the ECSCRM and EXMATEC. He is or has been responsible for the CNR-IMM unit of European and national projects on wide band gap semiconductors (Marie Curie RTN MANSiC, Marie Curie ITN NetFISiC, Eniac-JU Last Power, PON Ambition Power, ECSEL-JU WInSiC4AP), bilateral collaborations with other European institutions, and industrial research contracts.
Scientific Productions
Nanotechnology [IOP Publishing],
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
Materialia [Elsevier], Pages: 100528
High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors
ACS Applied Electronic Materials [American Chemical Society],
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39
Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170
Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298
Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468
ADVANCED MATERIALS INTERFACES [Wiley-VCH Verlag GmbH & Co. KGaA.], Pages: 1-11
Physics and technology of gallium nitride materials for power electronics
Riv. Nuovo Cim [], Volume: 41 Pages: 625-681
Schottky Contacts to Silicon Carbide: Physics, Technology and Applications
Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications [Materials Research Forum LLC], Volume: 37 Pages: 127
AIP Conference Proceedings [AIP Publishing], Volume: 1990 Issue: 1 Pages: 020008
Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117
physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653
Review of technology for normally-off HEMTs with p-GaN gate
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 96-106
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42
Barrier inhomogeneity of Ni Schottky contacts to bulk GaN
physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613
Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307
Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures
Materials Science in Semiconductor Processing [Pergamon],
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77
Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors
Materials Science in Semiconductor Processing [Pergamon],
Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390
physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764
Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator
IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator
IEEE Transactions on Electron Devices [IEEE],
Carbon [Pergamon], Volume: 116 Pages: 722-732
Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process
Materials Science Forum [Trans Tech Publications Ltd.], Volume: 897 Pages: 331
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600365
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357
Advances in the fabrication of graphene transistors on flexible substrates
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474
ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424
Journal of Applied Physics [AIP Publishing], Volume: 121 Issue: 4 Pages: 045701
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 35 Issue: 1 Pages: 01B140
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 35 Issue: 1 Pages: 01A101
physica status solidi (a) [],
Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 6 Issue: 10 Pages: P741-P745
Journal of Applied Physics [AIP Publishing], Volume: 120 Issue: 20 Pages: 205701
Ti/Al‐based contacts to p‐type SiC and GaN for power device applications
physica status solidi (a) [],
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142
Ohmic contacts to Gallium Nitride materials
Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345
Graphene integration with nitride semiconductors for high power and high frequency electronics
physica status solidi (a) [],
Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices
physica status solidi (a) [],
Substrate and atmosphere influence on oxygen p-doped graphene
Carbon [Pergamon], Volume: 107 Pages: 696-704
Effect of air on oxygen p‐doped graphene on SiO2
physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344
AIP Advances [AIP Publishing], Volume: 6 Issue: 7 Pages: 075021
Applied Physics Letters [AIP Publishing], Volume: 109 Issue: 1 Pages: 012102
IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741
Challenges in graphene integration for high-frequency electronics
AIP Conference Proceedings [AIP Publishing], Volume: 1749 Issue: 1 Pages: 020004
Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701
Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72
Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers
Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895
Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy
Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178
Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere
The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723
Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers
Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307
Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC
Journal of Applied Physics [AIP Publishing], Volume: 118 Issue: 3 Pages: 035705
Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984
Visible Blind 4H-SiC P $^{+} $-N UV Photodiode Obtained by Al Implantation
IEEE Photonics Journal [IEEE], Volume: 7 Issue: 3 Pages: 1-6
physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098
Applied Physics Letters [AIP Publishing], Volume: 106 Issue: 14 Pages: 142903
Current mapping in graphene contacts to AlGaN/GaN heterostructures
Nanoscience and Nanometrology [], Volume: 1 Pages: 1-7
Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures
physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555
F. Giannazzo”, I. Deretzis", A. La Magna', G. Nicotra', C. Spinella"
HeteroSiC & WASMPE 2013 [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107
Applied Physics Letters [AIP Publishing], Volume: 105 Issue: 14 Pages: 142108
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
Applied Surface Science [North-Holland], Volume: 314 Pages: 546-551
Challenges for energy efficient wide band gap semiconductor power devices
physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071
Applied Physics Letters [AIP Publishing], Volume: 105 Issue: 6 Pages: 063117
Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55
Microscopic mechanisms of graphene electrolytic delamination from metal substrates
Applied Physics Letters [AIP], Volume: 104 Issue: 23 Pages: 233105
Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018
Recent advances on dielectrics technology for SiC and GaN power devices
Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18
Journal of Crystal Growth [North-Holland], Volume: 393 Pages: 150-155
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339
Applied Surface Science [North-Holland], Volume: 291 Pages: 53-57
ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 3 Issue: 8 Pages: P285-P292
Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale
Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680
Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201
Applied Physics Letters [AIP], Volume: 103 Issue: 20 Pages: 201604
SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
Applied Physics Letters [AIP], Volume: 103 Issue: 15 Pages: 153508
Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162
High permittivity cerium oxide thin films on AlGaN/GaN heterostructures
Applied Physics Letters [AIP], Volume: 103 Issue: 11 Pages: 112905
Journal of Applied Physics [AIP], Volume: 114 Issue: 8 Pages: 083717
physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242
Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy
ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 3 Pages: 163-171
Nanoscale Probing of Interfaces in GaN for Devices Applications
ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 3 Pages: 439-446
ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 8 Pages: N3006-N3011
Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC
Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422
Applied Physics Letters [AIP], Volume: 101 Issue: 19 Pages: 193501
Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
Applied Physics Letters [AIP], Volume: 101 Issue: 17 Pages: 172901
Journal of Applied Physics [AIP], Volume: 112 Issue: 8 Pages: 084501
Critical issues for interfaces to p-type SiC and GaN in power devices
Applied Surface Science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures
Applied Physics Letters [AIP], Volume: 100 Issue: 6 Pages: 063511
Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN
Journal of Applied Physics [AIP], Volume: 110 Issue: 12 Pages: 123703
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
Nanoscale research letters [], Volume: 6 Issue: 1 Pages: 158
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces
Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120
Schottky barrier inhomogeneities in nickel silicide transrotational contacts
Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701
AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1
Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes
IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130
Applied physics letters [AIP], Volume: 99 Issue: 7 Pages: 072117
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302
Structural and transport properties in alloyed Ti
Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25
Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces
Journal of Applied Physics [AIP], Volume: 109 Issue: 1 Pages: 013707
Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications
IEEE Transactions on Electron Devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599
Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing
AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 75-78
Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces
AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 47-50
Surface and interface issues in wide band gap semiconductor electronics
Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735
Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202
On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation
IEEE Photonics Technology Letters [IEEE], Volume: 22 Issue: 11 Pages: 775-777
Highly efficient low reverse biased 4H-SiC Schottky photodiodes for UV-light detection
IEEE Photonics Technology Letters [IEEE], Volume: 21 Issue: 23 Pages: 1782-1784
Toward an ideal Schottky barrier on 3 C-SiC
Applied Physics Letters [AIP], Volume: 95 Issue: 8 Pages: 081907
Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation
Journal of Applied Physics [AIP], Volume: 106 Issue: 2 Pages: 023703
Nanoscale current transport through Schottky contacts on wide bandgap semiconductors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [AVS], Volume: 27 Issue: 2 Pages: 789-794
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304
Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale
Applied Physics Letters [AIP], Volume: 94 Issue: 11 Pages: 112104
Normal and abnormal grain growth in nanostructured gold film
Journal of Applied Physics [AIP], Volume: 105 Issue: 5 Pages: 054311
Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2
Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262
IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493
Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2
Nanoscale research letters [Springer New York], Volume: 3 Issue: 11 Pages: 454
Journal of Applied Physics [AIP], Volume: 104 Issue: 9 Pages: 093706
Microstructure of Au nanoclusters formed in and on SiO 2
Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598
Journal of Applied Physics [AIP], Volume: 104 Issue: 2 Pages: 024310
Applied Physics Letters [AIP], Volume: 92 Issue: 25 Pages: 252101
Electro-optical response of ion-irradiated 4 H-Si C Schottky ultraviolet photodetectors
Applied Physics Letters [AIP], Volume: 92 Issue: 9 Pages: 093505
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603
Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1215
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341
Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603
Electrical properties of self-assembled nano-Schottky diodes
Journal of Nanomaterials [Hindawi], Volume: 2008
Linköping University Electronic Press
Policy [], Volume: 2007 Issue: 2006 Pages: 2005
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460
Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts
Journal of Applied Physics [AIP], Volume: 102 Issue: 11 Pages: 113701
Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C
Applied Physics Letters [AIP], Volume: 91 Issue: 20 Pages: 202104
Photocurrent gain in 4 H-Si C interdigit Schottky UV detectors with a thermally grown oxide layer
Applied physics letters [AIP], Volume: 90 Issue: 22 Pages: 223507
Nanoscale research letters [Springer New York], Volume: 2 Issue: 5 Pages: 240
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339
Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814
Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces
Journal of applied physics [AIP], Volume: 101 Issue: 6 Pages: 064306
Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453
Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts
Applied Physics Letters [AIP], Volume: 90 Issue: 9 Pages: 092119
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574
Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247
High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts
Superlattices and Microstructures [Academic Press], Volume: 41 Issue: 1 Pages: 29-35
SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES
JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 945-948
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548
Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2
Applied physics letters [AIP], Volume: 89 Issue: 26 Pages: 263108
Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN
Journal of applied physics [AIP], Volume: 100 Issue: 12 Pages: 123706
Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles
Applied physics letters [AIP], Volume: 89 Issue: 24 Pages: 243113
Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379
High responsivity 4 H-Si C Schottky UV photodiodes based on the pinch-off surface effect
Applied physics letters [AIP], Volume: 89 Issue: 8 Pages: 081111
Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)
Applied physics letters [AIP], Volume: 89 Issue: 2 Pages: 022103
Transport localization in heterogeneous Schottky barriers of quantum-defined metal films
EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686
Effects of implantation defects on the carrier concentration of 6H-SiC
Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547
High growth rate process in a SiC horizontal CVD reactor using HCl
Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50
Temperature dependence of the c-axis drift mobility in 4H–SiC
Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47
Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes
Journal of applied physics [AIP], Volume: 99 Issue: 1 Pages: 013515
SELECTED TOPICS IN ELECTRONICS AND SYSTEMS [WORLD SCIENTIFIC], Volume: 40 Pages: 77
International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820
Drift mobility in 4H-SiC Schottky diodes
Applied Physics Letters [AIP], Volume: 87 Issue: 14 Pages: 142105
Journal of Applied Physics [AIP], Volume: 98 Issue: 2 Pages: 023713
Ion irradiation of inhomogeneous Schottky barriers on silicon carbide
Journal of applied physics [AIP], Volume: 97 Issue: 12 Pages: 123502
Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers
Applied Physics Letters [AIP], Volume: 86 Issue: 21 Pages: 211911
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 933-936
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 67-72
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 485-488
Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 429-432
WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power
2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 230-235
Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 407-411
Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489
Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 353-356
Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482
2018 International Semiconductor Conference (CAS) [IEEE], Pages: 7-16
Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs
Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 285-288
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 339-344
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 377-380
Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 913-918
Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors
Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 473-476
Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 123-126
Properties of SiO 2/4H-SiC interfaces with an oxide deposited by a high-temperature process
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1
Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1178-1181
Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 685-688
Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1015-1018
Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1019-1022
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1121-1124
X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 659-662
Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1137-1140
Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 663-666
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 705-708
Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1129-1132
Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1170-1173
Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 701-704
Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 143-147
Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 103-107
Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 424-427
Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate
Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 27-31
Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 428-431
Electrical properties of graphene contacts to AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 986-989
Industrial approach for next generation of power devices based on 4H-SiC.
Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 660-666
Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 999-1002
Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 929-932
Current transport in graphene/AlGaN/GaN heterostructures
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22
Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 112-115
Nanoscale reliability aspects of insulator onto wide band gap compounds
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65
Micro-Raman characterization of graphene grown on SiC (000-1)
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 15-18
Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 1142-1145
Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 665-668
Characterization of SiO2/SiC interfaces annealed in N2O or POCl3
Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 623-626
Nanoscale Characterization of SiC Interfaces and Devices
Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 407-413
Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC
Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 706-709
Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 113-116
A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 699-702
Potentialities of nickel oxide as dielectric for GaN and SiC devices
Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 777-780
Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 719-722
Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 825-828
Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing
Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 1295-1298
Materials Science Forum [Trans Tech Publications], Volume: 711 Pages: 203-207
4H-SiC Schottky photodiodes for ultraviolet light detection
2011 IEEE Nuclear Science Symposium Conference Record [IEEE], Pages: 1642-1646
Electrical activity of structural defects in 3C-SiC
Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 273-276
Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 808-811
Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 413-416
Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
Solid State Phenomena [Trans Tech Publications], Volume: 156 Pages: 493-498
Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 713-716
Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy
Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 833-836
On the viability of Au/3C-SiC Schottky barrier diodes
Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 677-680
Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 1211-1214
Demonstration of defect-induced limitations on the properties of Au/3C-SiC Schottky barrier diodes
Solid State Phenomena [Trans Tech Publications], Volume: 156 Pages: 331-336
Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 417-422
Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures
Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 967-970
Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces
Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 959-962
Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC
Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 569-572
Materials Science Forum [Trans Tech Publications], Volume: 615 Pages: 457-460
Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 1215-1218
Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 1341-1344
Solid State Phenomena [Trans Tech Publications], Volume: 131 Pages: 491-496
Clustering of gold on 6H-SiC and local nanoscale electrical properties
Solid State Phenomena [Trans Tech Publications], Volume: 131 Pages: 517-522
Effects of thermal annealing in ion-implanted Gallium Nitride
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 161-163
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 71-73
Materials science forum [Trans Tech Publications], Volume: 556 Pages: 545-548
4H-SiC Schottky array photodiodes for UV imaging application based on the pinch-off surface effect
Materials science forum [Trans Tech Publications], Volume: 556 Pages: 945-948
Current transport in Ti/Al/Ni/Au ohmic contacts to GaN and AlGaN
Materials science forum [Trans Tech Publications], Volume: 556 Pages: 1027-1030
Materials science forum [Trans Tech Publications], Volume: 556 Pages: 571-574
Epitaxial layers grown with HCl addition: a comparison with the standard process
Materials science forum [Trans Tech Publications], Volume: 527 Pages: 163-166
Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
Materials science forum [Trans Tech Publications], Volume: 527 Pages: 1167-1170
Optimisation of epitaxial layer growth by Schottky diodes electrical characterization
Materials science forum [Trans Tech Publications], Volume: 527 Pages: 199-202
Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC
Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 729-732
New achievements on CVD based methods for SiC epitaxial growth
Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 67-72
Defect evolution in ion irradiated 6H-SiC epitaxial layers
Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 485-488
Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 429-432
Silicon carbide: Defects and devices
Solid State Phenomena [Trans Tech Publications], Volume: 108 Pages: 663-670
Materials Science Forum [Trans Tech Publications], Volume: 483 Pages: 933-936
Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics
Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350
Hot Electron Transistors with Graphene Base for THz Electronics
Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 111-132
Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)
Epitaxial Graphene on Silicon Carbide [Pan Stanford], Pages: 111-141
GraphITA [Springer, Cham], Pages: 125-136
Silicon Carbide and Related Materials 2015
[Trans Tech Publications Ltd],
Self-Assembled Metal Nanostructures in Semiconductor Structures
Toward Functional Nanomaterials [Springer, New York, NY], Pages: 127-171