F Giannazzo, G Greco, S Di Franco, P Fiorenza, I Deretzis, A La Magna, C Bongiorno, M Zimbone, F La Via, M Zielinski, F Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

arXiv preprint arXiv:1912.12326 [],

Patrick Fiorenza, Mario Santo Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing],

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Pages: 100528

Filippo Giannazzo, Giuseppe Greco, Emanuela Schilirò, Raffaella Lo Nigro, Ioannis Deretzis, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Sebastiano Ravesi, Eric Frayssinet, Adrien Michon, Yvon Cordier

High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

Extensive Fermi level Engineering for Graphene Through the Interaction with Aluminum Nitrides and Oxides

physica status solidi (RRL)–Rapid Research Letters [John Wiley & Sons, Ltd],

Emanuela Schiliro, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, Bela Pecz, Hassan Gargouri, Raffaella Lo Nigro

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39

S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, S Di Franco, F Giannazzo, G Greco, F Roccaforte, M Saggio

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 10 Pages: 1599

F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, F Iucolano, G Greco

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Angelo Armano, Simonpietro Agnello, Bela Pecz, Ivan G Ivanov, Rositsa Yakimova, Filippo Giannazzo

Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097

Pawel Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, G Greco, F Roccaforte, M Leszczynski

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157

M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, F Giannazzo, F Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

Patrick Fiorenza, Marilena Vivona, Salvatore Di Franco, Emanuele Smecca, Salvatore Sanzaro, Alessandra Alberti, Mario Saggio, Fabrizio Roccaforte

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294

M Spera, G Greco, R Lo Nigro, C Bongiorno, F Giannazzo, M Zielinski, F La Via, F Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, Fabrizio Roccaforte

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655

Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Béla Pécz

Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

ADVANCED MATERIALS INTERFACES [Wiley-VCH Verlag GmbH & Co. KGaA.], Pages: 1-11

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in CVD‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

Riv. Nuovo Cim [], Volume: 41 Pages: 625-681

F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunà, M Saggio

Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

Advancing Silicon Carbide Electronics Technology, I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications [],

F Giannazzo, G Greco, E Schilirò, S Di Franco, I Deretzis, G Nicotra, A La Magna, F Roccaforte

Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications

AIP Conference Proceedings [AIP Publishing], Volume: 1990 Issue: 1 Pages: 020008

Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Electron trapping at SiO 2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors

physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Review of technology for normally-off HEMTs with p-GaN gate

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 96-106

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Ferdinando Iucolano, Raffaella Lo Nigro, Fabrizio Roccaforte

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon],

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Ferdinando Iucolano, Mario Saggio

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon],

M Vivona, G Greco, C Bongiorno, R Lo Nigro, S Scalese, F Roccaforte

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

G Greco, S Di Franco, F Iucolano, F Giannazzo, F Roccaforte

Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Giuseppe Nicotra, Corrado Spinella, Michelangelo Scopelliti, Bruno Pignataro, Simonpietro Agnello, Fabrizio Roccaforte

Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator

IEEE Transactions on Electron Devices [IEEE],

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899

Chamseddine Bouhafs, AA Zakharov, Ivan Gueorguiev Ivanov, F Giannazzo, Jens Eriksson, Vallery Stanishev, P Kühne, Tihomir Iakimov, Tino Hofmann, Mathias Schubert, F Roccaforte, Rositsa Yakimova, Vanya Darakchieva

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Carbon [Pergamon], Volume: 116 Pages: 722-732

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, Rositsa Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600365

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Advances in the fabrication of graphene transistors on flexible substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474

Gabriele Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424

Giuseppe Greco, Filippo Giannazzo, Fabrizio Roccaforte

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of Applied Physics [AIP Publishing], Volume: 121 Issue: 4 Pages: 045701

Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Raffaella Lo Nigro

Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 35 Issue: 1 Pages: 01B140

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 35 Issue: 1 Pages: 01A101

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

physica status solidi (a) [],

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta K Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 6 Issue: 10 Pages: P741-P745

T Sledziewski, M Vivona, K Alassaad, Pawel Kwasnicki, R Arvinte, S Beljakowa, HB Weber, F Giannazzo, Herve Peyre, V Souliere, T Chassagne, M Zielinski, Sandrine Juillaguet, G Ferro, F Roccaforte, M Krieger

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Journal of Applied Physics [AIP Publishing], Volume: 120 Issue: 20 Pages: 205701

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [],

F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, F Roccaforte

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al 2 O 3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Ohmic contacts to Gallium Nitride materials

Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [],

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

Substrate and atmosphere influence on oxygen p-doped graphene

Carbon [Pergamon], Volume: 107 Pages: 696-704

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

Effect of air on oxygen p‐doped graphene on SiO2

physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344

Emanuela Schilirò, Raffaella Lo Nigro, Patrick Fiorenza, Fabrizio Roccaforte

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP Advances [AIP Publishing], Volume: 6 Issue: 7 Pages: 075021

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Fabrizio Roccaforte

Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters [AIP Publishing], Volume: 109 Issue: 1 Pages: 012102

F Giannazzo, G Fisichella, G Greco, F Roccaforte

Challenges in graphene integration for high-frequency electronics

AIP Conference Proceedings [AIP Publishing], Volume: 1749 Issue: 1 Pages: 020004

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H–SiC interfaces

Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701

Giuseppe Greco, Ferdinando Iucolano, Salvatore Di Franco, Corrado Bongiorno, Alfonso Patti, Fabrizio Roccaforte

Effects of annealing treatments on the properties of Al/Ti/p-GaN interfaces for normally OFF p-GaN HEMTs

IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735-2741

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

M Vivona, P Fiorenza, T Sledziewski, M Krieger, T Chassagne, M Zielinski, F Roccaforte

Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895

F Giannazzo, G Fisichella, A Piazza, S Di Franco, IP Oliveri, S Agnello, F Roccaforte

Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, F Roccaforte, M Cannas, FM Gelardi, S Agnello

Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere

The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723

F Giannazzo, G Fisichella, A Piazza, S Agnello, F Roccaforte

Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers

Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307

M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte

Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

Journal of Applied Physics [AIP Publishing], Volume: 118 Issue: 3 Pages: 035705

Raffaella Lo Nigro, Gabriele Fisichella, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

An insight into the epitaxial nanostructures of NiO and CeO 2 thin film dielectrics for AlGaN/GaN heterostructures

Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Cristina Tudisco, Guglielmo Guido Condorelli, Salvatore Di Franco, Fabrizio Roccaforte, Raffaella Lo Nigro

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984

A Sciuto, M Mazzillo, S Di Franco, F Roccaforte, G D'Arrigo

Visible Blind 4H-SiC P $^{+} $-N UV Photodiode Obtained by Al Implantation

IEEE Photonics Journal [IEEE], Volume: 7 Issue: 3 Pages: 1-6

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied Physics Letters [AIP Publishing], Volume: 106 Issue: 14 Pages: 142903

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [], Volume: 1 Pages: 1-7

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555

G Fisichella, P Fiorenza, R Yakimova, F Roccaforte

F. Giannazzo”, I. Deretzis", A. La Magna', G. Nicotra', C. Spinella"

HeteroSiC & WASMPE 2013 [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107

Patrick Fiorenza, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters [AIP Publishing], Volume: 105 Issue: 14 Pages: 142108

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied Surface Science [North-Holland], Volume: 314 Pages: 546-551

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

G Fisichella, G Greco, F Roccaforte, F Giannazzo

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Applied Physics Letters [AIP Publishing], Volume: 105 Issue: 6 Pages: 063117

Raffaella Lo Nigro, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55

G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

Applied Physics Letters [AIP], Volume: 104 Issue: 23 Pages: 233105

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC

Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, F Roccaforte, A La Magna

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Journal of Crystal Growth [North-Holland], Volume: 393 Pages: 150-155

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, C Spinella, F Roccaforte, A La Magna

Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Applied Surface Science [North-Holland], Volume: 291 Pages: 53-57

K Alassaad, M Vivona, V Soulière, B Doisneau, F Cauwet, D Chaussende, F Giannazzo, F Roccaforte, Gabriel Ferro

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 3 Issue: 8 Pages: P285-P292

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 103 Issue: 20 Pages: 201604

P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters [AIP], Volume: 103 Issue: 15 Pages: 153508

Raffaella Lo Nigro, Patrick Fiorenza, Maria R Catalano, Gabriele Fisichella, Fabrizio Roccaforte, Graziella Malandrino

Binary and complex oxide thin films for microelectronic applications: An insight into their growth and advanced nanoscopic investigation

Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162

P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 103 Issue: 11 Pages: 112905

G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [AIP], Volume: 114 Issue: 8 Pages: 083717

F Giannazzo, G Fisichella, R Lo Nigro, P Fiorenza, S Di Franco, A Marino, N Piluso, E Rimini, F Roccaforte

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate‐supported graphene

physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254

Gabriele Fisichella, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Cristina Tudisco, Guido G Condorelli, Nicolò Piluso, Noemi Spartà, Stella Lo Verso, Corrado Accardi, Cristina Tringali, Sebastiano Ravesi, Filippo Giannazzo

Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 3 Pages: 439-446

Mike Leszczynski, Pawel Prystawko, Jerzy Plesiewicz, Leslaw Dmowski, Elzbieta Litwin-Staszewska, Szymon Grzanka, Ewa Grzanka, Fabrizio Roccaforte

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 3 Pages: 163-171

Fabrizio Roccaforte, Patrick Fiorenza, Filippo Giannazzo

Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 8 Pages: N3006-N3011

F Giannazzo, I Deretzis, A La Magna, F Roccaforte, Rositsa Yakimova

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422

LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied Physics Letters [AIP], Volume: 101 Issue: 19 Pages: 193501

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 101 Issue: 17 Pages: 172901

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [AIP], Volume: 112 Issue: 8 Pages: 084501

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied Surface Science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Vito Raineri, Graziella Malandrino, Raffaella Lo Nigro

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 100 Issue: 6 Pages: 063511

G Greco, P Prystawko, M Leszczyński, R Lo Nigro, V Raineri, F Roccaforte

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Journal of Applied Physics [AIP], Volume: 110 Issue: 12 Pages: 123703

Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Vito Raineri, Fabrizio Roccaforte

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120

Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Edoardo Zanetti, Vito Raineri, Fabrizio Roccaforte

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 158

Alessandra Alberti, Fabrizio Roccaforte, Sebania Libertino, Corrado Bongiorno, Antonino La Magna

Schottky barrier inhomogeneities in nickel silicide transrotational contacts

Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701

Jens Eriksson, Fabrizio Roccaforte, Ming-Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at< formula>< roman> SiO< inf> 2-3< roman> C-< roman> S i C Interfaces

AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1

Massimo Mazzillo, Antonella Sciuto, Giuseppe Catania, Fabrizio Roccaforte, Vito Raineri

Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes

IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130

Massimo Mazzillo, Antonella Sciuto, Giuseppe Catania, Fabrizio Roccaforte, Vito Raineri

Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes

IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters [AIP], Volume: 99 Issue: 7 Pages: 072117

A Frazzetto, F Giannazzo, R Lo Nigro, V Raineri, F Roccaforte

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces

Journal of Applied Physics [AIP], Volume: 109 Issue: 1 Pages: 013707

A FRAZZETTO, F GIANNAZZO, R LO NIGRO, V RAINERI, F ROCCAFORTE

Structural and transport properties in alloyed Ti

Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25

A Sciuto, G D'Arrigo, F Roccaforte, M Mazzillo, RC Spinella, V Raineri

Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications

IEEE Transactions on Electron Devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599

A Sciuto, G D'Arrigo, F Roccaforte, M Mazzillo, RC Spinella, V Raineri

Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications

IEEE Transactions on Electron Devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri

Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 75-78

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces

AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 47-50

F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri

Surface and interface issues in wide band gap semiconductor electronics

Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735

Fabrizio Roccaforte, Ming-Hung Weng, Corrado Bongiorno, Filippo Giannazzo, Ferdinando Iucolano, Vito Raineri

Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC

Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202

Antonella Sciuto, Massimo Mazzillo, Vito Raineri, Giuseppe Catania, Giuseppe D'Arrigo, Fabrizio Roccaforte

On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation

IEEE Photonics Technology Letters [IEEE], Volume: 22 Issue: 11 Pages: 775-777

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493

Massimo Mazzillo, Giovanni Condorelli, Maria Eloisa Castagna, Giuseppe Catania, Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

Highly efficient low reverse biased 4H-SiC Schottky photodiodes for UV-light detection

IEEE Photonics Technology Letters [IEEE], Volume: 21 Issue: 23 Pages: 1782-1784

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Toward an ideal Schottky barrier on 3 C-SiC

Applied Physics Letters [AIP], Volume: 95 Issue: 8 Pages: 081907

F Roccaforte, F Giannazzo, F Iucolano, C Bongiorno, V Raineri

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

Journal of Applied Physics [AIP], Volume: 106 Issue: 2 Pages: 023703

F Giannazzo, F Roccaforte, F Iucolano, V Raineri, F Ruffino, MG Grimaldi

Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [AVS], Volume: 27 Issue: 2 Pages: 789-794

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri, C Bongiorno, C Spinella

Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale

Applied Physics Letters [AIP], Volume: 94 Issue: 11 Pages: 112104

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2

Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, C Spinella

Normal and abnormal grain growth in nanostructured gold film

Journal of Applied Physics [AIP], Volume: 105 Issue: 5 Pages: 054311

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Au/Si nanodroplets towards Si nanowires formation: Characterization of the thermal-induced self-organization mechanism

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of Applied Physics [AIP], Volume: 104 Issue: 9 Pages: 093706

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2

Nanoscale research letters [Springer New York], Volume: 3 Issue: 11 Pages: 454

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri

Microstructure of Au nanoclusters formed in and on SiO 2

Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si (100): size and roughness evolution

Journal of Applied Physics [AIP], Volume: 104 Issue: 2 Pages: 024310

Fabrizio Roccaforte, Filippo Giannazzo, Ferdinando Iucolano, Corrado Bongiorno, Vito Raineri

Two-dimensional electron gas insulation by local surface thin thermal oxidation in Al Ga N∕ Ga N heterostructures

Applied Physics Letters [AIP], Volume: 92 Issue: 25 Pages: 252101

Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

Electro-optical response of ion-irradiated 4 H-Si C Schottky ultraviolet photodetectors

Applied Physics Letters [AIP], Volume: 92 Issue: 9 Pages: 093505

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Electrical properties of self-assembled nano-Schottky diodes

Journal of Nanomaterials [Hindawi], Volume: 2008

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603

Håkan Andersson, Peter Berkesand, Emma Burman, Anders Fåk, Elisavet Koutzamani

Linköping University Electronic Press

Policy [], Volume: 2007 Issue: 2006 Pages: 2005

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals&58; Gold on/in SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1215

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts

Journal of Applied Physics [AIP], Volume: 102 Issue: 11 Pages: 113701

F Giannazzo, F Roccaforte, V Raineri

Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C

Applied Physics Letters [AIP], Volume: 91 Issue: 20 Pages: 202104

A Sciuto, F Roccaforte, S Di Franco, V Raineri, S Billotta, G Bonanno

Photocurrent gain in 4 H-Si C interdigit Schottky UV detectors with a thermally grown oxide layer

Applied physics letters [AIP], Volume: 90 Issue: 22 Pages: 223507

F Ruffino, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2

Nanoscale research letters [Springer New York], Volume: 2 Issue: 5 Pages: 240

F Iucolano, F Giannazzo, F Roccaforte, L Romano, MG Grimaldi, V Raineri

Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339

F Ruffino, R De Bastiani, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, C Spinella, V Raineri

Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, C Bongiorno, F Roccaforte, V Raineri

Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces

Journal of applied physics [AIP], Volume: 101 Issue: 6 Pages: 064306

F Giannazzo, F Roccaforte, V Raineri

High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts

Applied Physics Letters [AIP], Volume: 90 Issue: 9 Pages: 092119

C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals&58; gold in/on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247

F Giannazzo, F Roccaforte, SF Liotta, V Raineri

Chapter 3-SiC Characterization and Theory-3.3 Defects-Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

A Sciuto, F Roccaforte, S Di Franco, SF Liotta, G Bonanno, V Raineri

High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts

Superlattices and Microstructures [Academic Press], Volume: 41 Issue: 1 Pages: 29-35

F GIANNAZZO, C BONGIORNO, F ROCCAFORTE, V RAINERI, F RUFFINO, A CANINO, MG GRIMALDI

SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES

JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6

A Sciuto, F Roccaforte, S Di Franco, V Raineri, SF Liotta, S Billotta, G Bonanno, M Belluso

Chapter 5-SiC Devices-5.4 Sensors and Detectors-4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 945-948

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2

Applied physics letters [AIP], Volume: 89 Issue: 26 Pages: 263108

F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri

Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN

Journal of applied physics [AIP], Volume: 100 Issue: 12 Pages: 123706

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles

Applied physics letters [AIP], Volume: 89 Issue: 24 Pages: 243113

F Roccaforte, F Iucolano, A Alberti, F Giannazzo, V Puglisi, C Bongiorno, S Di Franco, V Raineri

Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si (111)

Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, Giovanni Bonanno

High responsivity 4 H-Si C Schottky UV photodiodes based on the pinch-off surface effect

Applied physics letters [AIP], Volume: 89 Issue: 8 Pages: 081111

F Roccaforte, F Iucolano, F Giannazzo, A Alberti, V Raineri

Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)

Applied physics letters [AIP], Volume: 89 Issue: 2 Pages: 022103

FRVRSFLF Giannazzo, F Roccaforte, V Raineri, SF Liotta

Transport localization in heterogeneous Schottky barriers of quantum-defined metal films

EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686

A Ruggiero, S Libertino, F Roccaforte, F La Via, L Calcagno

Effects of implantation defects on the carrier concentration of 6H-SiC

Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547

Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Ohmic contacts to SiC

SELECTED TOPICS IN ELECTRONICS AND SYSTEMS [WORLD SCIENTIFIC], Volume: 40 Pages: 77

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50

G Galvagno, F Roccaforte, A Ruggiero, L Calcagno, E Zanetti, M Saggio, F Portuese, F La Via

Temperature dependence of the c-axis drift mobility in 4H–SiC

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47

F Roccaforte, S Libertino, V Raineri, A Ruggiero, V Massimino, L Calcagno

Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes

Journal of applied physics [AIP], Volume: 99 Issue: 1 Pages: 013515

Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Ohmic contacts to SiC

International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820

F La Via, G Galvagno, F Roccaforte, A Ruggiero, L Calcagno

Drift mobility in 4H-SiC Schottky diodes

Applied Physics Letters [AIP], Volume: 87 Issue: 14 Pages: 142105

L Calcagno, A Ruggiero, F Roccaforte, F La Via

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of Applied Physics [AIP], Volume: 98 Issue: 2 Pages: 023713

F Roccaforte, S Libertino, F Giannazzo, C Bongiorno, F La Via, V Raineri

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Journal of applied physics [AIP], Volume: 97 Issue: 12 Pages: 123502

D Alquier, C Bongiorno, F Roccaforte, V Raineri

Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers

Applied Physics Letters [AIP], Volume: 86 Issue: 21 Pages: 211911

D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, G Abbondanza, G Abbagnale, A Veneroni, F Omarini, L Zamolo, M Masi, F Roccaforte, G Giannazzo, S Di Franco, F La Via

Chapter 2-SiC Epitaxy-2.1 Homoepitaxial Growth-New Achievements on CVD Based Methods for SiC Epitaxial Growth

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 67-72

A Ruggiero, M Zimbone, F Roccaforte, S Libertino, F La Via, R Reitano, L Calcagno

Chapter 4-SiC Characterization-4.3 Defects-Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 485-488

F Roccaforte, F Giannazzo, C Bongiorno, S Libertino, F La Via, V Raineri

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732

R Pierobon, G Meneghesso, E Zanoni, F Roccaforte, F La Via, V Raineri

Chapter 6-SiC Devices-6.2 Unipolar diodes-Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 933-936

F La Via, F Roccaforte, S Di Franco, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, G Abbondanza, G Abbagnale, GL Valente, D Crippa

Chapter 4-SiC Characterization-4.2 Optical and Electrical-Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 429-432