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Surname: 
Roccaforte
Firstname: 
Fabrizio
Position: 
Staff
Profile: 
Research Director
Phone: 
++39-0955968226
Curriculum: 

Fabrizio Roccaforte received the M.Sc. Degree in Physics from the University of Catania (Italy) in 1996, and the PhD from the University of Göttingen (Germany) in 1999. In 2000/2001 he was visiting scientist at the University of Göttingen, and advisor at STMicroelectronics (Italy). In December 2001 he joined CNR-IMM as a Researcher, where he became Senior Researcher in 2007. His research interests are in the field of wide band gap semiconductors (e.g., SiC, GaN,..) materials and devices processing for power electronics devices. He is co-author of more than 250 papers in international journals and conference proceedings, several review articles, 5 book chapters, 3 patents, and he has given several invited talks and lectures on SiC and GaN at international conferences. He has been chairman of international conferences on WBG semiconductors (HeteroSiC-WASMPE 2009, WOCSDICE 2011, ICSCRM2015), and he is member of the Steering Committee  of the ECSCRM and EXMATEC. He is or has been responsible for the CNR-IMM unit of European and National projects on wide band gap semiconductors (Marie Curie RTN MANSiC, Marie Curie ITN NetFISiC, Eniac-JU Last Power, PON Ambition Power, ECSEL-JU WInSiC4AP, Reaction, EleGaNTe)  bilateral collaborations with other European institutions, and industrial research contracts.

Source: 
Catania HQ

Scientific Productions

Alessandra Alberti, Filippo Giannazzo, Francesco La Via, Salvatore Lombardo, Antonio M Mio, Giuseppe Nicotra, Stefania Privitera, Riccardo Reitano, Fabrizio Roccaforte, Corrado Spinella, Emanuele Rimini

Measuring Techniques for the Semiconductor’s Parameters

Springer Handbook of Semiconductor Devices [Springer, Cham], Pages: 117-168

Fabrizio Roccaforte, Michael Leszczynski

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

[John Wiley & Sons], Pages: 1-446

Fabrizio Roccaforte, Mike Leszczynski

Introduction to Gallium Nitride Properties and Applications

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [John Wiley & Sons], Pages: 1-40

Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Chandreswar Mahata, Mario Lanza

Conductive AFM of 2D Materials and Heterostructures for Nanoelectronics

Electrical Atomic Force Microscopy for Nanoelectronics [Springer, Cham], Pages: 303-350

F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunà, M Saggio

Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications [Materials Research Forum LLC], Volume: 37 Pages: 127-190

Filippo Giannazzo, Giuseppe Greco, Fabrizio Roccaforte, Roy Dagher, Adrien Michon, Yvon Cordier

Hot Electron Transistors with Graphene Base for THz Electronics

Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing [CRC Press], Pages: 95-115

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Giuseppe Nicotra, Corrado Spinella, Fabrizio Roccaforte, Rositza Yakimova

Nanoscale electrical and structural properties of epitaxial graphene interface with sic (0001)

Epitaxial Graphene on Silicon Carbide [Jenny Stanford Publishing], Pages: 111-141

G Fisichella, S Lo Verso, S Di Marco, V Vinciguerra, E Schilir, S Di Franco, R Lo Nigro, F Roccaforte, A Zurutuza, A Centeno, S Ravesi, F Giannazzo

Advances in the Fabrication of Large-Area Back-Gated Graphene Field-Effect Transistors on Plastics: Platform for Flexible Electronics and Sensing

GraphITA [Springer, Cham], Pages: 125-136

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio

Silicon Carbide and Related Materials 2015

[Trans Tech Publications Ltd],

Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, Vito Raineri, Maria Grazia Grimaldi

Self-Assembled Metal Nanostructures in Semiconductor Structures

Toward Functional Nanomaterials [Springer, New York, NY], Pages: 127-171

FABRIZIO ROCCAFORTE, FRANCESCO LA VIA, VITO RAINERI

Ohmic contacts to SiC

SiC Materials and Devices: Volume 1 [World Scientific], Pages: 77-116

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Marcin Zielinski, Hugues Mank, Valdas Jokubavicius, Rositsa Yakimova

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Applied Surface Science [North-Holland], Volume: 606 Pages: 154896

P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506

Anna L Pellegrino, Francesca Lo Presti, Emanuele Smecca, Salvatore Valastro, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Alessandra Alberti, Graziella Malandrino

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells

Materials [MDPI], Volume: 15 Issue: 21 Pages: 7790

I Deretzis, P Fiorenza, T Fazio, E Schilirò, R Lo Nigro, G Greco, G Fisicaro, F Roccaforte, A La Magna

Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 16 Pages: 165105

Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Advanced Materials Interfaces [], Pages: 2201502

Marilena Vivona, Filippo Giannazzo, Gabriele Bellocchi, Salvatore Ethan Panasci, Simonpietro Agnello, Paolo Badalà, Anna Bassi, Corrado Bongiorno, Salvatore Di Franco, Simone Rascunà, Fabrizio Roccaforte

Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520

Filippo Giannazzo, Salvatore E Panasci, Emanuela Schilirò, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz

Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

Advanced Materials Interfaces [], Volume: 9 Issue: 22 Pages: 2200915

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate”

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287

Antonio Valletta, Fabrizio Roccaforte, Antonino La Magna, Guglielmo Fortunato, Patrick Fiorenza

Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs

Semiconductor Science and Technology [IOP Publishing],

Patrick Fiorenza, Emanuela Schilirò, Giuseppe Greco, Marilena Vivona, Marco Cannas, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

Applied Surface Science [North-Holland], Volume: 579 Pages: 152136

Raffaella Lo Nigro, Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Fabrizio Roccaforte

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and GalliumNitride Electronic Devices

Materials [Multidisciplinary Digital Publishing Institute], Volume: 15 Issue: 3 Pages: 830

Salvatore E Panasci, Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, Filippo Giannazzo

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182

F Giannazzo, G Greco, Y Cordier, F Roccaforte

Towards ballistic vertical transistors by graphene integration with nitride semiconductors

Il nuovo cimento C [Societa italiana di fisica], Volume: 45 Issue: 6 Pages: 1-4

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro

Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

ACS Applied Electronic Materials [American Chemical Society],

Marilena Vivona, Gabriele Bellocchi, Raffaella Lo Nigro, Simone Rascunà, Fabrizio Roccaforte

Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures

Semiconductor Science and Technology [IOP Publishing], Volume: 37 Issue: 1 Pages: 015012

Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316

Peter Wellmann, Michael Schöler, Philipp Schuh, Mike Jennings, Fan Li, Roberta Nipoti, Andrea Severino, Ruggero Anzalone, Fabrizio Roccaforte, Massimo Zimbone, Francesco La Via

Status of 3C-SiC Growth and Device Technology

Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications [John Wiley & Sons],

SE Panasci, E Schilirò, F Migliore, M Cannas, FM Gelardi, F Roccaforte, F Giannazzo, S Agnello

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

Applied Physics Letters [AIP Publishing LLC], Volume: 119 Issue: 9 Pages: 093103

Emanuela Schilirò, Raffaella Lo Nigro, Salvatore E Panasci, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Fabrizio Roccaforte, Filippo Giannazzo

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer exfoliated on gold: the role of the substrate

arXiv preprint arXiv:2108.09542 [],

Marilena Vivona, Giuseppe ,Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Mario S Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Applied Surface Science [North-Holland], Volume: 557 Pages: 149752

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259

G Greco, P Fiorenza, M Spera, F Giannazzo, F Roccaforte

Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 23 Pages: 234501

Patrick Fiorenza, Mario S Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 1626

G Bellocchi, M Vivona, C Bongiorno, P Badalà, A Bassi, S Rascuna, F Roccaforte

Barrier Height Tuning in Ti/4H-SiC Schottky diodes

Solid-State Electronics [Pergamon], Volume: 186 Pages: 108042

Emanuela Schilirò, Patrick Fiorenza, Corrado Bongiorno, Corrado Spinella, Salvatore Di Franco, Giuseppe Greco, Raffaella Lo Nigro, Fabrizio Roccaforte

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Correlation between the interfacial charge trapping and chemical properties of deposited SiO2 layers in 4H-SiC MOSFETs subjected to different nitridations

arXiv e-prints [], Pages: arXiv: 2012.08829

Marilena Vivona, Giuseppe Greco, Gabriele Bellocchi, Luca Zumbo, Salvatore Di Franco, Mario Saggio, Simone Rascunà, Fabrizio Roccaforte

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 54 Issue: 5 Pages: 055101

E Schilirò, R Lo Nigro, SE Panasci, FM Gelardi, S Agnello, Rositsa Yakimova, F Roccaforte, F Giannazzo

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Carbon [Pergamon], Volume: 169 Pages: 172-181

F Giannazzo, R Dagher, E Schilirò, SE Panasci, G Greco, G Nicotra, F Roccaforte, S Agnello, J Brault, Y Cordier, A Michon

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Fabrizio Roccaforte

Technologies for Normally-off GaN HEMTs

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 137-175

Patrick Fiorenza, Filippo Giannazzo, Salvatore Cascino, Mario Saggio, Fabrizio Roccaforte

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 103502

Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Ewa Grzanka, Mike Leszczynski, Filippo Giannazzo, Fabrizio Roccaforte

Thermal annealing effect on electrical and structural properties of Tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004

Monia Spera, Giuseppe Greco, Andrea Severino, Marilena Vivona, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502

Giuseppe Fisicaro, Corrado Bongiorno, Ioannis Deretzis, Filippo Giannazzo, Francesco La Via, Fabrizio Roccaforte, Marcin Zielinski, Massimo Zimbone, Antonino La Magna

Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402

P Fiorenza, E Schilirò, F Giannazzo, C Bongiorno, M Zielinski, F La Via, F Roccaforte

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Applied Surface Science [North-Holland], Pages: 146656

Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte

Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 38 Issue: 3 Pages: 032410

Raffaella Lo Nigro, Emanuela Schilirò, Giovanni Mannino, Salvatore Di Franco, Fabrizio Roccaforte

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Journal of Crystal Growth [North-Holland], Pages: 125624

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Volume: 9 Pages: 100528

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399

P Fiorenza, MS Alessandrino, B Carbone, C Di Martino, A Russo, M Saggio, C Venuto, E Zanetti, F Giannazzo, F Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing], Volume: 31 Issue: 12 Pages: 125203

Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte

Comparison between Single Al2O3 or HfO2 Single Dielectric Layers and their Nanolaminated Systems

Advanced Materials Letters [International Association of Advanced Materials], Volume: 11 Issue: 1 Pages: 1-5

Patrick Fiorenza, Mario Santo Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing],

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Pages: 100528

Filippo Giannazzo, Giuseppe Greco, Emanuela Schilirò, Raffaella Lo Nigro, Ioannis Deretzis, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Sebastiano Ravesi, Eric Frayssinet, Adrien Michon, Yvon Cordier

High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354

Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, Bela Pecz, Hassan Gargouri, Raffaella Lo Nigro

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39

S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, S Di Franco, F Giannazzo, G Greco, F Roccaforte, M Saggio

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 10 Pages: 1599

F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, F Iucolano, G Greco

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Angelo Armano, Simonpietro Agnello, Bela Pecz, Ivan G Ivanov, Rositsa Yakimova, Filippo Giannazzo

Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097

Pawel Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, G Greco, F Roccaforte, M Leszczynski

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157

Monia Spera, Domenico Corso, Salvatore Di Franco, Giuseppe Greco, Andrea Severino, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

Patrick Fiorenza, Marilena Vivona, Salvatore Di Franco, Emanuele Smecca, Salvatore Sanzaro, Alessandra Alberti, Mario Saggio, Fabrizio Roccaforte

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294

Monia Spera, Giuseppe Greco, R Lo Nigro, Corrado Bongiorno, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Béla Pécz

Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

ADVANCED MATERIALS INTERFACES [Wiley-VCH Verlag GmbH & Co. KGaA.], Pages: 1-11

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in CVD‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, Fabrizio Roccaforte

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655

Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681

F Giannazzo, G Greco, E Schilirò, S Di Franco, I Deretzis, G Nicotra, A La Magna, F Roccaforte

Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008

Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Electron trapping at SiO 2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Review of technology for normally-off HEMTs with p-GaN gate

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 96-106

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors

physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653

Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Ferdinando Iucolano, Raffaella Lo Nigro, Fabrizio Roccaforte

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa, Mike Jennings

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Materials Science Forum [], Volume: 924 Pages: 913

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon],

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Ferdinando Iucolano, Mario Saggio

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon],

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta K Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 6 Issue: 10 Pages: P741

M Vivona, G Greco, C Bongiorno, R Lo Nigro, S Scalese, F Roccaforte

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1325

G Greco, S Di Franco, F Iucolano, F Giannazzo, F Roccaforte

Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Giuseppe Nicotra, Corrado Spinella, Michelangelo Scopelliti, Bruno Pignataro, Simonpietro Agnello, Fabrizio Roccaforte

Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator

IEEE Transactions on Electron Devices [IEEE],

Chamseddine Bouhafs, AA Zakharov, Ivan Gueorguiev Ivanov, F Giannazzo, Jens Eriksson, Vallery Stanishev, P Kühne, Tihomir Iakimov, Tino Hofmann, Mathias Schubert, F Roccaforte, Rositsa Yakimova, Vanya Darakchieva

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Carbon [Pergamon], Volume: 116 Pages: 722-732

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pecz, Rositsa Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460

Gabriele Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Advances in the fabrication of graphene transistors on flexible substrates

Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere

Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424

Giuseppe Greco, Filippo Giannazzo, Fabrizio Roccaforte

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701

Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Raffaella Lo Nigro

Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

physica status solidi (a) [],

T Sledziewski, M Vivona, K Alassaad, Pawel Kwasnicki, R Arvinte, S Beljakowa, HB Weber, F Giannazzo, Herve Peyre, V Souliere, T Chassagne, M Zielinski, Sandrine Juillaguet, G Ferro, F Roccaforte, M Krieger

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 20 Pages: 205701

F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, F Roccaforte

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [],

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al 2 O 3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Ohmic contacts to Gallium Nitride materials

Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

Substrate and atmosphere influence on oxygen p-doped graphene

Carbon [Pergamon], Volume: 107 Pages: 696-704

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

Effect of air on oxygen p‐doped graphene on SiO2

physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344

Emanuela Schilirò, Raffaella Lo Nigro, Patrick Fiorenza, Fabrizio Roccaforte

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP Advances [AIP Publishing LLC], Volume: 6 Issue: 7 Pages: 075021

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Fabrizio Roccaforte

Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 1 Pages: 012102

Giuseppe Greco, Ferdinando Iucolano, Salvatore Di Franco, Corrado Bongiorno, Alfonso Patti, Fabrizio Roccaforte

Effects of annealing treatments on the properties of Al/Ti/p-GaN interfaces for normally OFF p-GaN HEMTs

IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741

F Giannazzo, G Fisichella, G Greco, F Roccaforte

Challenges in graphene integration for high-frequency electronics

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H–SiC interfaces

Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

M Vivona, P Fiorenza, T Sledziewski, M Krieger, T Chassagne, M Zielinski, F Roccaforte

Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895

F Giannazzo, G Fisichella, A Piazza, S Di Franco, IP Oliveri, S Agnello, F Roccaforte

Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, F Roccaforte, M Cannas, FM Gelardi, S Agnello

Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere

The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723

F Giannazzo, G Fisichella, A Piazza, S Agnello, F Roccaforte

Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers

Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1

M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte

Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705

Raffaella Lo Nigro, Gabriele Fisichella, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

An insight into the epitaxial nanostructures of NiO and CeO 2 thin film dielectrics for AlGaN/GaN heterostructures

Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Cristina Tudisco, Guglielmo Guido Condorelli, Salvatore Di Franco, Fabrizio Roccaforte, Raffaella Lo Nigro

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984

A Sciuto, M Mazzillo, S Di Franco, F Roccaforte, G D'Arrigo

Visible Blind 4H-SiC P $^{+} $-N UV Photodiode Obtained by Al Implantation

IEEE Photonics Journal [IEEE], Volume: 7 Issue: 3 Pages: 1-6

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 14 Pages: 142903

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555

G Fisichella, P Fiorenza, R Yakimova, F Roccaforte

F. Giannazzo”, I. Deretzis", A. La Magna', G. Nicotra', C. Spinella"

HeteroSiC & WASMPE 2013 [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107

Patrick Fiorenza, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 14 Pages: 142108

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied surface science [North-Holland], Volume: 314 Pages: 546-551

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

G Fisichella, G Greco, F Roccaforte, F Giannazzo

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117

Raffaella Lo Nigro, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55

K Alassaad, M Vivona, V Soulière, B Doisneau, F Cauwet, D Chaussende, F Giannazzo, F Roccaforte, Gabriel Ferro

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 3 Issue: 8 Pages: P285

G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 23 Pages: 233105

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC

Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, F Roccaforte, A La Magna

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Journal of crystal growth [North-Holland], Volume: 393 Pages: 150-155

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, C Spinella, F Roccaforte, A La Magna

Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Applied surface science [North-Holland], Volume: 291 Pages: 53-57

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 20 Pages: 201604

P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508

Raffaella Lo Nigro, Patrick Fiorenza, Maria R Catalano, Gabriele Fisichella, Fabrizio Roccaforte, Graziella Malandrino

Binary and complex oxide thin films for microelectronic applications: An insight into their growth and advanced nanoscopic investigation

Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162

P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905

G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717

F Giannazzo, G Fisichella, R Lo Nigro, P Fiorenza, S Di Franco, A Marino, N Piluso, E Rimini, F Roccaforte

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate‐supported graphene

physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192

Fabrizio Roccaforte, Patrick Fiorenza, Filippo Giannazzo

Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 8 Pages: N3006

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254

Gabriele Fisichella, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Cristina Tudisco, Guido G Condorelli, Nicolò Piluso, Noemi Spartà, Stella Lo Verso, Corrado Accardi, Cristina Tringali, Sebastiano Ravesi, Filippo Giannazzo

Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439

Mike Leszczynski, Pawel Prystawko, Jerzy Plesiewicz, Leslaw Dmowski, Elzbieta Litwin-Staszewska, Szymon Grzanka, Ewa Grzanka, Fabrizio Roccaforte

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 163

F Giannazzo, I Deretzis, A La Magna, F Roccaforte, Rositsa Yakimova

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422

LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 19 Pages: 193501

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 8 Pages: 084501

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Vito Raineri, Graziella Malandrino, Raffaella Lo Nigro

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Publisher’s Note:“Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors”[Appl. Phys. Lett. 99 …

Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 25 Pages: 072117

G Greco, P Prystawko, M Leszczyński, R Lo Nigro, V Raineri, F Roccaforte

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123703

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120

Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Edoardo Zanetti, Vito Raineri, Fabrizio Roccaforte

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-6

Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Vito Raineri, Fabrizio Roccaforte

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132

Alessandra Alberti, Fabrizio Roccaforte, Sebania Libertino, Corrado Bongiorno, Antonino La Magna

Schottky barrier inhomogeneities in nickel silicide transrotational contacts

Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701

Jens Eriksson, Fabrizio Roccaforte, Ming-Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at< formula>< roman> SiO< inf> 2-3< roman> C-< roman> S i C Interfaces

AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1

Massimo Mazzillo, Antonella Sciuto, Giuseppe Catania, Fabrizio Roccaforte, Vito Raineri

Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes

IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130

Massimo Mazzillo, Antonella Sciuto, Giuseppe Catania, Fabrizio Roccaforte, Vito Raineri

Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes

IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters [American Institute of Physics], Volume: 99 Issue: 7 Pages: 072117

A Frazzetto, F Giannazzo, R Lo Nigro, V Raineri, F Roccaforte

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces

Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 1 Pages: 013707

A FRAZZETTO, F GIANNAZZO, R LO NIGRO, V RAINERI, F ROCCAFORTE

Structural and transport properties in alloyed Ti

Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25

A Sciuto, G D'Arrigo, F Roccaforte, M Mazzillo, RC Spinella, V Raineri

Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications

IEEE transactions on electron devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599

A Sciuto, G D'Arrigo, F Roccaforte, M Mazzillo, RC Spinella, V Raineri

Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications

IEEE Transactions on Electron Devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri

Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 75-78

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 47-50

F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri

Surface and interface issues in wide band gap semiconductor electronics

Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735

Fabrizio Roccaforte, Ming-Hung Weng, Corrado Bongiorno, Filippo Giannazzo, Ferdinando Iucolano, Vito Raineri

Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC

Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202

Antonella Sciuto, Massimo Mazzillo, Vito Raineri, Giuseppe Catania, Giuseppe D'Arrigo, Fabrizio Roccaforte

On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation

IEEE Photonics Technology Letters [IEEE], Volume: 22 Issue: 11 Pages: 775-777

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Au/Si nanodroplets towards Si nanowires formation: Characterization of the thermal-induced self-organization mechanism

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493

Massimo Mazzillo, Giovanni Condorelli, Maria Eloisa Castagna, Giuseppe Catania, Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

Highly efficient low reverse biased 4H-SiC Schottky photodiodes for UV-light detection

IEEE Photonics Technology Letters [IEEE], Volume: 21 Issue: 23 Pages: 1782-1784

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Toward an ideal Schottky barrier on 3 C-SiC

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 8 Pages: 081907

F Roccaforte, F Giannazzo, F Iucolano, C Bongiorno, V Raineri

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 2 Pages: 023703

F Giannazzo, F Roccaforte, F Iucolano, V Raineri, F Ruffino, MG Grimaldi

Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 27 Issue: 2 Pages: 789-794

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri, C Bongiorno, C Spinella

Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale

Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 11 Pages: 112104

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, C Spinella

Normal and abnormal grain growth in nanostructured gold film

Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 5 Pages: 054311

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2

Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262-268

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2

Nanoscale research letters [SpringerOpen], Volume: 3 Issue: 11 Pages: 454-460

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093706

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri

Microstructure of Au nanoclusters formed in and on SiO 2

Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si (100): size and roughness evolution

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 2 Pages: 024310

Fabrizio Roccaforte, Filippo Giannazzo, Ferdinando Iucolano, Corrado Bongiorno, Vito Raineri

Two-dimensional electron gas insulation by local surface thin thermal oxidation in Al Ga N∕ Ga N heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 25 Pages: 252101

Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

Electro-optical response of ion-irradiated 4 H-Si C Schottky ultraviolet photodetectors

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 9 Pages: 093505

Håkan Andersson, Peter Berkesand

Linköping University Electronic Press

Policy [], Volume: 2007 Issue: 2006 Pages: 2005

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals&58; Gold on/in SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1215

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Electrical properties of self-assembled nano-Schottky diodes

Journal of Nanomaterials [Hindawi], Volume: 2008

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts

Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 11 Pages: 113701

F Giannazzo, F Roccaforte, V Raineri

Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C

Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 20 Pages: 202104

A Sciuto, F Roccaforte, S Di Franco, V Raineri, S Billotta, G Bonanno

Photocurrent gain in 4 H-Si C interdigit Schottky UV detectors with a thermally grown oxide layer

Applied physics letters [American Institute of Physics], Volume: 90 Issue: 22 Pages: 223507

F Ruffino, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2

Nanoscale Research Letters [SpringerOpen], Volume: 2 Issue: 5 Pages: 240-247

F Ruffino, R De Bastiani, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, C Spinella, V Raineri

Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814

F Iucolano, F Giannazzo, F Roccaforte, L Romano, MG Grimaldi, V Raineri

Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, C Bongiorno, F Roccaforte, V Raineri

Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces

Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 064306

F Giannazzo, F Roccaforte, V Raineri

High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts

Applied Physics Letters [American Institute of Physics], Volume: 90 Issue: 9 Pages: 092119

A Sciuto, F Roccaforte, S Di Franco, V Raineri, SF Liotta, S Billotta, G Bonanno, M Belluso

Chapter 5-SiC Devices-5.4 Sensors and Detectors-4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 945-948

C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals&58; gold in/on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247

F Giannazzo, F Roccaforte, SF Liotta, V Raineri

Chapter 3-SiC Characterization and Theory-3.3 Defects-Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

A Sciuto, F Roccaforte, S Di Franco, SF Liotta, G Bonanno, V Raineri

High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts

Superlattices and Microstructures [Academic Press], Volume: 41 Issue: 1 Pages: 29-35

F GIANNAZZO, C BONGIORNO, F ROCCAFORTE, V RAINERI, F RUFFINO, A CANINO, MG GRIMALDI

SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES

JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 26 Pages: 263108

F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri

Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN

Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 12 Pages: 123706

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 24 Pages: 243113

F Roccaforte, F Iucolano, A Alberti, F Giannazzo, V Puglisi, C Bongiorno, S Di Franco, V Raineri

Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si (111)

Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, Giovanni Bonanno

High responsivity 4 H-Si C Schottky UV photodiodes based on the pinch-off surface effect

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 8 Pages: 081111

F Roccaforte, F Iucolano, F Giannazzo, A Alberti, V Raineri

Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 2 Pages: 022103

FRVRSFLF Giannazzo, F Roccaforte, V Raineri, SF Liotta

Transport localization in heterogeneous Schottky barriers of quantum-defined metal films

EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686

A Ruggiero, S Libertino, F Roccaforte, F La Via, L Calcagno

Effects of implantation defects on the carrier concentration of 6H-SiC

Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547

G Galvagno, F Roccaforte, A Ruggiero, L Calcagno, E Zanetti, M Saggio, F Portuese, F La Via

Temperature dependence of the c-axis drift mobility in 4H–SiC

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47

F Roccaforte, S Libertino, V Raineri, A Ruggiero, V Massimino, L Calcagno

Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes

Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 1 Pages: 013515

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50

Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Ohmic contacts to SiC

International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820

F La Via, G Galvagno, F Roccaforte, A Ruggiero, L Calcagno

Drift mobility in 4H-SiC Schottky diodes

Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 14 Pages: 142105

L Calcagno, A Ruggiero, F Roccaforte, F La Via

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of Applied Physics [American Institute of Physics], Volume: 98 Issue: 2 Pages: 023713

F Roccaforte, S Libertino, F Giannazzo, C Bongiorno, F La Via, V Raineri

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502

D Alquier, C Bongiorno, F Roccaforte, V Raineri

Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 21 Pages: 211911

F Roccaforte, F Giannazzo, C Bongiorno, S Libertino, F La Via, V Raineri

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732

R Pierobon, G Meneghesso, E Zanoni, F Roccaforte, F La Via, V Raineri

Chapter 6-SiC Devices-6.2 Unipolar diodes-Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 933-936

F La Via, F Roccaforte, S Di Franco, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, G Abbondanza, G Abbagnale, GL Valente, D Crippa

Chapter 4-SiC Characterization-4.2 Optical and Electrical-Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 429-432

D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, G Abbondanza, G Abbagnale, A Veneroni, F Omarini, L Zamolo, M Masi, F Roccaforte, G Giannazzo, S Di Franco, F La Via

Chapter 2-SiC Epitaxy-2.1 Homoepitaxial Growth-New Achievements on CVD Based Methods for SiC Epitaxial Growth

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 67-72

A Ruggiero, M Zimbone, F Roccaforte, S Libertino, F La Via, R Reitano, L Calcagno

Chapter 4-SiC Characterization-4.3 Defects-Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 485-488

Marcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, S Cascino, A Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs

2022 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 5B. 3-1-5B. 3-6

Patrick Fiorenza, C Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

2022 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 3B. 3-1-3B. 3-5

Marilena Vivona, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte

Ni/Heavily-Doped 4H-SiC Schottky Contacts

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 411-416

Filippo Giannazzo, Patrick Fiorenza, E Schiliro, Salvatore Di Franco, Sylvain Monnoye, Hugues Mank, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-SiС on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 400-405

Ruggero Anzalone, Giuseppe Greco, Fabrizio Roccaforte, Patrick Fiorenza, Nicolò Piluso, Andrea Severino

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 18-22

Patrick Fiorenza, Corrado Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Charge Trapping Mechanisms in Nitridated SiO2/4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1062 Pages: 160-164

Patrick Fiorenza, Salvatore Adamo, MS Alessandrino, Cettina Bottari, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Elisa Vitanza, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects

2021 IEEE International Reliability Physics Symposium (IRPS) [IEEE], Pages: 1-6

Maurizio Moschetti, Cristina Miccoli, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Santo Reina, Antonino Parisi, Ferdinando Iucolano

Study of behavior of p-gate in Power GaN under positive voltage

2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6

Angelo Alberto Messina, Antonio Imbruglia, Michele Calabretta, Vincenzo Vinciguerra, Calin Constantin Moise, Alessandro Sitta, Marius Enachescu, Fabrizio Roccaforte

The" first and euRopEAn siC eighT Inches pilOt liNe": a project, called REACTION, that will boost key SiC Technologies upgrading (developments) in Europe, unleashing …

2020 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6

Patrick Fiorenza, Mario Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 433-438

Fabrizio Roccaforte, Monia Spera, Salvatore Di Franco, Raffaella Lo Nigro, Patrick Fiorenza, Filippo Giannazzo, Ferdinando Iucolano, Giuseppe Greco

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1004 Pages: 725-730

Antonio Imbruglia, Mario Saggio, Salvatore Cascino, Agatino Minotti, Marco Renna, Giuseppe Gullotta, Antonio Lionetto, Stradale Primosole, Jacques Favre, Fabrizio Roccaforte, Patrick Fiorenza, Leoluca Liggio, Salvatore Frisella

WInSiC4AP: Wide Band Gap Innovative SiC for Advanced Power

2019 AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE) [IEEE], Pages: 1-6

Andrea Severino, Domenico Mello, Simona Boninelli, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Cristiano Calabretta, Lucia Calcagno, Nicolò Piluso, Giuseppe Arena

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 407-411

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Salvatore Di Franco, Domenico Corso, Patrick Fiorenza, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 485-489

Fan Li, Valdas Jokubavicius, Michael R Jennings, Rositza Yakimova, Amador Pérez Tomás, Stephen Russell, Yogesh Sharma, Fabrizio Roccaforte, Philip A Mawby, Francesco La Via

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 353-356

Patrick Fiorenza, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Sylvain Monnoye, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 479-482

Patrick Fiorenza, Filippo Giannazzo, Mario Giuseppe Saggio, Fabrizio Roccaforte

SiO2/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements

Materials Science Forum [Trans Tech Publications Ltd], Volume: 963 Pages: 230-235

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza

Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

2018 International Semiconductor Conference (CAS) [IEEE], Pages: 7-16

Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 285-288

Fabrizio Roccaforte, Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Simone Rascunà, Mario Saggio

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 339-344

Marilena Vivona, Giuseppe Greco, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Silvia Scalese, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 377-380

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter J Wellmann, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvo Coffa, Hiroyuki Nagasawa

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 913-918

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

Materials Science Forum [Trans Tech Publications Ltd], Volume: 924 Pages: 473-476

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Filippo Giannazzo, Fabrizio Roccaforte

Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements

Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 123-126

Marilena Vivona, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

Materials Science Forum [Trans Tech Publications Ltd], Volume: 897 Pages: 331-334

P Fiorenza, A La Magna, M Vivona, F Giannazzo, F Roccaforte

Anomalous Fowler-Nordheim tunneling through SiO 2/4H-SiC barrier investigated by temperature and time dependent gate current measurements

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Marilena Vivona, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

Properties of SiO 2/4H-SiC interfaces with an oxide deposited by a high-temperature process

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Marilena Vivona, Patrick Fiorenza, Salvatore Di Franco, Claude Marcandella, Marc Gaillardin, Sylvain Girard, Fabrizio Roccaforte

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 659-662

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Raffaella Lo Nigro, Emanuela Schilirò, Fabrizio Roccaforte, Filippo Giannazzo

Hot electron transistors based on graphene/AlGaN/GaN vertical heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1137-1140

Marilena Vivona, Patrick Fiorenza, Tomasz Sledziewski, Alexandra Gkanatsiou, Michael Krieger, Thierry Chassagne, Marcin Zielinski, Fabrizio Roccaforte

Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 663-666

Massimo Mazzillo, Antonella Sciuto, Fabrizio Roccaforte, Corrado Bongiorno, Roberto Modica, Salvatore Marchese, Paolo Badalà, Denise Calì, Francesco Patanè, Beatrice Carbone, Alfio Russo, Salvo Coffa

Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1015-1018

Antonella Sciuto, Massimo Mazzillo, Salvatore Di Franco, Fabrizio Roccaforte

Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1019-1022

Antonino La Magna, Ioannis Deretzis, Filippo Giannazzo, Giuseppe Nicotra, Fabrizio Roccaforte, Corrado Spinella, Rositza Yakimova

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC (0001) and SiC (000-1) Substrates

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1121-1124

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 705-708

Filippo Giannazzo, Giuseppe Nicotra, Ioannis Deretzis, Aurora Piazza, Gabriele Fisichella, S Agnello, Corrado Spinella, Antonino La Magna, Fabrizio Roccaforte, Rositza Yakimova

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC (000-1)

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1129-1132

Giuseppe Greco, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Domenico Corso, Emanuele Smecca, Alessandra Alberti, Alfonso Patti, Fabrizio Roccaforte

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1170-1173

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 701-704

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Antonino Parisi, Santo Reina, Alfonso Patti, Fabrizio Roccaforte

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 1178-1181

Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Corrado Bongiorno, Hassan Gargouri, Mario Saggio, Raffaella Lo Nigro, Fabrizio Roccaforte

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 858 Pages: 685-688

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Electrical properties of graphene contacts to AlGaN/GaN heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 986-989

Mario Saggio, Alfio Guarnera, Edoardo Zanetti, Simone Rascunà, Alessia Frazzetto, Dario Salinas, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte

Industrial approach for next generation of power devices based on 4H-SiC.

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 660-666

P Fiorenza, Marilena Vivona, LK Swanson, Filippo Giannazzo, C Bongiorno, S Di Franco, S Lorenti, A Frazzetto, Thierry Chassagne, Fabrizio Roccaforte

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 143-147

Marilena Vivona, Filippo Giannazzo, Kassem Alassaad, Véronique Soulière, Gabriel Ferro, Fabrizio Roccaforte

Preliminary Study on the Effect of Micrometric Ge-Droplets on the Characteristics of Ni/4H-SiC Schottky Contacts

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 424-427

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 999-1002

Filippo Giannazzo, Stefan Hertel, Andreas Albert, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger, Heiko B Weber

Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 929-932

Marilena Vivona, Giuseppe Greco, Raffaella Lo Nigro, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Evolution of the Electrical and Structural Properties of Ti/Al/W Contacts to p-Type Implanted 4H-SiC upon Thermal Annealing

Materials Science Forum [Trans Tech Publications Ltd], Volume: 821 Pages: 428-431

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Giuseppe Nicotra, Corrado Spinella, Gabriele Fisichella, Patrick Fiorenza, Rositza Yakimova, Fabrizio Roccaforte

Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces

Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107

Kassem Alassaad, Veronique Soulière, Marelina Vivona, Filippo Giannazzo, Fabrizio Roccaforte, Gabriel Ferro

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate

Materials Science Forum [Trans Tech Publications Ltd], Volume: 806 Pages: 27-31

P Fiorenza, G Greco, M Vivona, F Giannazzo, R Lo Nigro, F Roccaforte

Nanoscale reliability aspects of insulator onto wide band gap compounds

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65

G Fisichella, G Greco, S Ravesi, F Roccaforte, F Giannazzo

Current transport in graphene/AlGaN/GaN heterostructures

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 19-22

A Piazza, S Agnello, I Deretzis, A La Magna, M Scuderi, G Nicotra, C Spinella, G Fisichella, F Roccaforte, M Cannas, FM Gelardi, R Yakimova, F Giannazzo

Micro-Raman characterization of graphene grown on SiC (000-1)

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 15-18

Raffaella Lo Nigro, Emanuela Schilirò, Cristina Tudisco, Guglielmo G Condorelli, Patrick Fiorenza, Hassan Gargouri, Fabrizio Roccaforte

Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 112-115

Marilena Vivona, Giuseppe Greco, Salvatore di Franco, Filippo Giannazzo, Fabrizio Roccaforte, Alessia Frazzetto, Simone Rascunà, Edoardo Zanetti, Alfio Guarnera, Mario Saggio

Comparative study of the current transport mechanisms in Ni2Si Ohmic contacts on n-and p-type implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 665-668

Filippo Giannazzo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger, Heiko B Weber

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 1142-1145

Patrick Fiorenza, Lukas K Swanson, Marilena Vivona, Filippo Giannazzo, Corrado Bongiorno, Simona Lorenti, Alessia Frazzetto, Fabrizio Roccaforte

Characterization of SiO2/SiC interfaces annealed in N2O or POCl3

Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 623-626

Filippo Giannazzo, Patrick Fiorenza, Mario Saggio, Fabrizio Roccaforte

Nanoscale Characterization of SiC Interfaces and Devices

Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 407-413

Marilena Vivona, Kassem Al Assaad, Véronique Soulière, Filippo Giannazzo, Fabrizio Roccaforte, Gabriel Ferro

Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 778 Pages: 706-709

Patrick Fiorenza, Alessia Frazzetto, Lukas K Swanson, Filippo Giannazzo, Fabrizio Roccaforte

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs

Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 699-702

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Salvatore di Franco, Nicolò Piluso, Patrick Fiorenza, Fabrizio Roccaforte, Patrick Schmid, Wilfried Lerch, Rositza Yakimova

Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)

Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 113-116

Lukas K Swanson, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO2/4H-SiC interfaces

Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 719-722

Raffaella Lo Nigro, Giuseppe Greco, L Swanson, G Fisichella, Patrick Fiorenza, Filippo Giannazzo, S Di Franco, C Bongiorno, A Marino, G Malandrino, Fabrizio Roccaforte

Potentialities of nickel oxide as dielectric for GaN and SiC devices

Materials Science Forum [Trans Tech Publications Ltd], Volume: 740 Pages: 777-780

Fabrizio Roccaforte, Alessia Frazzetto, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Michał Leszczyński, Pawel Prystawko, Edoardo Zanetti, Mario Saggio, Vito Raineri

Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications

Materials Science Forum [Trans Tech Publications Ltd], Volume: 711 Pages: 203-207

Alessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, R Lo Nigro, M Saggio, Edoardo Zanetti, Vito Raineri

Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 825-828

Giuseppe Greco, Fabrizio Roccaforte, R Lo Nigro, C Bongiorno, S Di Franco, P Prystawko, M Leszczyński, Vito Raineri

Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing

Materials Science Forum [Trans Tech Publications Ltd], Volume: 717 Pages: 1295-1298

Massimo Mazzillo, Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

4H-SiC Schottky photodiodes for ultraviolet light detection

2011 IEEE Nuclear Science Symposium Conference Record [IEEE], Pages: 1642-1646

Jens Eriksson, Fabrizio Roccaforte, Ming Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Vito Raineri

Electrical activity of structural defects in 3C-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 273-276

Fabrizio Roccaforte, Giuseppe Greco, Ming Hung Weng, Filippo Giannazzo, Vito Raineri

Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers

Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 808-811

Alessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Corrado Bongiorno, Salvatore Di Franco, Ming Hung Weng, Mario Saggio, Edoardo Zanetti, Vito Raineri

Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 679 Pages: 413-416

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Valeria Puglisi, Vito Raineri

Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation

Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 1211-1214

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Jean Lorenzzi, Gabriel Ferro, Vito Raineri

Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy

Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 833-836

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Stefano Leone, Vito Raineri

On the viability of Au/3C-SiC Schottky barrier diodes

Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 677-680

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 493-498

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Demonstration of defect-induced limitations on the properties of Au/3C-SiC Schottky barrier diodes

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 156 Pages: 331-336

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Vito Raineri

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 645 Pages: 713-716

Filippo Giannazzo, Martin Rambach, Dario Salinas, Fabrizio Roccaforte, Vito Raineri

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 457-460

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Moschetti, Valeria Puglisi, Vito Raineri

Electrical Properties of Ni/GaN Schottky Contacts on High-Temperature Annealed GaN Surfaces

Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 959-962

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Giuseppe Moschetti, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 569-572

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 1215-1218

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore di Franco, Valeria Puglisi, Vito Raineri

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 1341-1344

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 600 Pages: 603-606

Vito Raineri, Filippo Giannazzo, Fabrizio Roccaforte

Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping

Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 417-422

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri

Influence of thermal annealing on ohmic contacts and device isolation in AlGaN/GaN heterostructures

Materials Science Forum [Trans Tech Publications Ltd], Volume: 615 Pages: 967-970

Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, Vito Raineri, Maria Grazia Grimaldi

Clustering of gold on 6H-SiC and local nanoscale electrical properties

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 517-522

Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri

Electrical activation and carrier compensation in Si and Mg implanted GaN by Scanning Capacitance Microscopy

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 131 Pages: 491-496

F Iucolano, F Giannazzo, F Roccaforte, V Puglisi, MG Grimaldi, V Raineri

Effects of thermal annealing in ion-implanted Gallium Nitride

2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 161-163

F Giannazzo, F Roccaforte, V Raineri, D Salinas

Effect of Thermal Annealing on the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC

2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 71-73

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, A Alberti, Vito Raineri

Current transport in Ti/Al/Ni/Au ohmic contacts to GaN and AlGaN

Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 1027-1030

Mariaconcetta Canino, Filippo Giannazzo, Fabrizio Roccaforte, Antonella Poggi, Sandro Solmi, Vito Raineri, Roberta Nipoti

Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 571-574

Filippo Giannazzo, Fabrizio Roccaforte, SF Liotta, Vito Raineri

Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 545-548

Antonella Sciuto, Fabrizio Roccaforte, Salvatore di Franco, Vito Raineri, Salvatore F Liotta, Sergio Billotta, Giovanni Bonanno, Massimiliano Belluso

4H-SiC Schottky array photodiodes for UV imaging application based on the pinch-off surface effect

Materials science forum [Trans Tech Publications Ltd], Volume: 556 Pages: 945-948

Francesco La Via, G Galvagno, A Firrincieli, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, F Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

Optimisation of epitaxial layer growth by Schottky diodes electrical characterization

Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 199-202

Francesco La Via, G Galvagno, A Firrincieli, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa

Epitaxial layers grown with HCl addition: a comparison with the standard process

Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 163-166

Vito Raineri, Fabrizio Roccaforte, Sebania Libertino, Alfonso Ruggiero, V Massimino, Lucia Calcagno

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Materials science forum [Trans Tech Publications Ltd], Volume: 527 Pages: 1167-1170

Fabrizio Roccaforte, Salvatore di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti

Silicon carbide: Defects and devices

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 108 Pages: 663-670

Danilo Crippa, Gian Luca Valente, Alfonso Ruggiero, L Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, G Abbagnale, Alessandro Veneroni, Fabrizio Omarini, LAURA Zamolo, Maurizio Masi, Fabrizio Roccaforte, G Giannazzo, Salvatore di Franco, Francesco La Via

New achievements on CVD based methods for SiC epitaxial growth

Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 67-72

Alfonso Ruggiero, M Zimbone, Fabrizio Roccaforte, Sebania Libertino, Francesco La Via, Ricardo Reitano, Lucia Calcagno

Defect evolution in ion irradiated 6H-SiC epitaxial layers

Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 485-488

Francesco La Via, Fabrizio Roccaforte, Salvatore di Franco, Alfonso Ruggiero, L Neri, Ricardo Reitano, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa

Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes

Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 429-432

R Pierobon, G Meneghesso, E Zanoni, Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Temperature stability of breakdown voltage on SiC power Schottky diodes with different barrier heights

Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 933-936

Fabrizio Roccaforte, Filippo Giannazzo, Corrado Bongiorno, Sebania Libertino, Francesco La Via, Vito Raineri

Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC

Materials Science Forum [Trans Tech Publications Ltd], Volume: 483 Pages: 729-732

Mario Giuseppe Saggio, Simone Rascuna, Fabrizio Roccaforte, Saggio, Mario Giuseppe

WIDE BANDGAP HIGH-DENSITY SEMICONDUCTOR SWITCHING DEVICE AND MANUFACTURING PROCESS THEREOF

US20150372093 [],

Fabrizio Roccaforte, Vito Raineri, Francesco La Via, Mario Saggio, , Mario Saggio

Process for manufacturing a Schottky contact on a semiconductor substrate

US20060183267 [],

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