Antonino Scandurra, Paolo Ragonese, Cristiano Calabretta, Khadisha Zahra, Liam Soomary, Fabrizio Roccaforte, Giuseppe Greco, Nicolò Piluso, Maria Eloisa Castagna, Ferdinando Iucolano, Andrea Severino, Elena Bruno, Salvo Mirabella

Two-dimensional electron gas isolation mechanism in Al0. 2Ga0. 8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

Applied Surface Science [North-Holland], Volume: 674 Pages: 160885

P Fiorenza, F Cordiano, SM Alessandrino, A Russo, E Zanetti, M Saggio, C Bongiorno, F Giannazzo, F Roccaforte

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200 {\deg} C

arXiv preprint arXiv:2410.19545 [],

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Salvatore Ethan Panasci, Salvatore Di Franco, Yvon Cordier, Eric Frayssinet, Raffaella Lo Nigro, Filippo Giannazzo, Fabrizio Roccaforte

Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates

AIP Advances [AIP Publishing], Volume: 14 Issue: 10

Salvatore Ethan Panasci, Emanuela Schiliro, Marco Cannas, Simonpietro Agnello, Antal Koos, Miklos Nemeth, Béla Pécz, Fabrizio Roccaforte, Filippo Giannazzo

Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 362 Pages: 7-12

Marilena Vivona, Patrick Fiorenza, Giuseppe Greco, Salvatore Di Franco, Gabriele Bellocchi, Paola Mancuso, Simone Rascunà, Antonio Mio, Giuseppe Nicotra, Filippo Giannazzo, Fabrizio Roccaforte

Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature

Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 394-395

Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal Koos, Béla Pécz, Filippo Giannazzo

Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts

Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 97-99

Patrick Fiorenza, Enzo Fontana, Giovanni Maira, Cettina Bottari, Salvatore Adamo, Beatrice Carbone, Mario S Alessandrino, Alfio Russo, Salvatore Ethan Panasci, Marco Zignale, Marilena Vivona, Filippo Giannazzo, Fabrizio Roccaforte

Understanding of the Impact of Carrot-Like Defects Embedded in the 4H-SiC Power MOSFET Structure: A Route for an Effective Device Qualification

Scientific Books of Abstracts [Trans Tech Publications Ltd], Volume: 8 Pages: 678-679

Marilena Vivona, Patrick Fiorenza, Viviana Scuderi, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 361 Pages: 27-32

Paolo Badalà, Corrado Bongiorno, Patrick Fiorenza, Gabriele Bellocchi, Emanuele Smecca, Marilena Vivona, Marco Zignale, Maurizio Massimino, Ioannis Deretzis, Simone Rascunà, Marcello Frazzica, Massimo Boscaglia, Fabrizio Roccaforte, Antonino La Magna, Alessandra Alberti

Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 359 Pages: 97-103

Patrick Fiorenza, Marco Zignale, Edoardo Zanetti, Mario S Alessandrino, Beatrice Carbone, Alfio Guarnera, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 358 Pages: 45-49

G Greco, P Fiorenza, F Giannazzo, M Vivona, C Venuto, F Iucolano, F Roccaforte

Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

IEEE Electron Device Letters [IEEE],

Salvatore Ethan Panasci, Emanuela Schilirò, Antal Koos, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Béla Pécz, Filippo Giannazzo

Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire

Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 24

Bruno Galizia, Patrick Fiorenza, Emanuela Schilirò, Bela Pecz, Zsolt Foragassy, Giuseppe Greco, Mario Saggio, Salvatore Cascino, Raffaella Lo Nigro, Fabrizio Roccaforte

Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition

Materials Science in Semiconductor Processing [Pergamon], Volume: 174 Pages: 108244

Laura Anoldo, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza, Fabrizio Roccaforte

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Materials [MDPI], Volume: 17 Issue: 8 Pages: 1908

Fabrizio Roccaforte, Marilena Vivona, Salvatore Ethan Panasci, Giuseppe Greco, Patrick Fiorenza, Attila Sulyok, Antal Koos, Bela Pecz, Filippo Giannazzo

Schottky contacts on sulfurized silicon carbide (4H-SiC) surface

Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 10

Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz, Marco Cannas, Simonpietro Agnello, Filippo Giannazzo

Interface Properties of MoS2 van der Waals Heterojunctions with GaN

Nanomaterials [MDPI], Volume: 14 Issue: 2 Pages: 133

G Greco, S Di Franco, R Lo Nigro, C Bongiorno, M Spera, P Badalà, F Iucolano, F Roccaforte

Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Applied Physics Letters [AIP Publishing], Volume: 124 Issue: 1

Patrick Fiorenza, Marco Zignale, Marco Camalleri, Laura Scalia, Edoardo Zanetti, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Impact of the NO annealing duration on the SiO2/4H–SiC interface properties in lateral MOSFETs: The energetic profile of the near-interface-oxide traps

Materials Science in Semiconductor Processing [Pergamon], Volume: 169 Pages: 107866

Antonino Scandurra, Matteo Testa, Giorgia Franzò, Giuseppe Greco, Fabrizio Roccaforte, Maria Eloisa Castagna, Cristiano Calabretta, Andrea Severino, Ferdinando Iucolano, Elena Bruno, Salvatore Mirabella

Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation

Materials Science in Semiconductor Processing [Pergamon], Volume: 168 Pages: 107871

Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Nanomaterials [MDPI], Volume: 13 Issue: 21 Pages: 2837

Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Béla Pécz, Zsolt Fogarassy, Emanuela Schilirò, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Microelectronic Engineering [Elsevier], Pages: 112103

E Schilirò, SE Panasci, AM Mio, G Nicotra, S Agnello, B Pecz, Gy Z Radnoczi, I Deretzis, A La Magna, F Roccaforte, R Lo Nigro, F Giannazzo

Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2

Applied Surface Science [North-Holland], Volume: 630 Pages: 157476

Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals [MDPI], Volume: 13 Issue: 9 Pages: 1309

Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo, Fabrizio Roccaforte

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Materials [MDPI], Volume: 16 Issue: 16 Pages: 5638

M Vivona, P Fiorenza, V Scuderi, F La Via, F Giannazzo, F Roccaforte

Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults

Applied Physics Letters [AIP Publishing], Volume: 123 Issue: 7

Patrick Fiorenza, Marco Camalleri, Laura Scalia, Edoardo Zanetti, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Evolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETs

Materials Science Forum [Trans Tech Publications Ltd], Volume: 1090 Pages: 113-117

Marilena Vivona, Filippo Giannazzo, Gabriele Bellocchi, Salvatore Panasci, Simonpietro Agnello, Paolo Badalà, Anna Bassi, Corrado Bongiorno, Salvatore Di Franco, Simone Rascunà, Fabrizio Roccaforte

Exploring UV-Laser Effects on Al-Implanted 4H-SiC

Solid State Phenomena [Trans Tech Publications Ltd], Volume: 342 Pages: 85-89

Giuseppe Greco, Patrick Fiorenza, Emanuela Schilirò, Corrado Bongiorno, Salvatore Di Franco, Pierre-Marie Coulon, Eric Frayssinet, Florian Bartoli, Filippo Giannazzo, Daniel Alquier, Yvon Cordier, Fabrizio Roccaforte

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Microelectronic Engineering [Elsevier], Volume: 276 Pages: 112009

SE Panasci, E Schilirò, A Koos, M Nemeth, M Cannas, S Agnello, F Roccaforte, B Pécz, F Giannazzo

Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films

Microelectronic Engineering [Elsevier], Pages: 111967

Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Béla Pécz, Simonpietro Agnello, Marco Cannas, Filippo Giannazzo

Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations

physica status solidi (RRL)–Rapid Research Letters [], Pages: 2300218

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Marcin Zielinski, Hugues Mank, Valdas Jokubavicius, Rositsa Yakimova

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Applied Surface Science [North-Holland], Volume: 606 Pages: 154896

P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, F Roccaforte

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 24 Pages: 245701

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Corrado Bongiorno, Maurizio Moschetti, Cettina Bottari, Mario Santi Alessandrino, Ferdinando Iucolano, Fabrizio Roccaforte

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 23 Pages: 233506

Anna L Pellegrino, Francesca Lo Presti, Emanuele Smecca, Salvatore Valastro, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Alessandra Alberti, Graziella Malandrino

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells

Materials [MDPI], Volume: 15 Issue: 21 Pages: 7790

I Deretzis, P Fiorenza, T Fazio, E Schilirò, R Lo Nigro, G Greco, G Fisicaro, F Roccaforte, A La Magna

Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

Journal of Applied Physics [AIP Publishing LLC], Volume: 132 Issue: 16 Pages: 165105

Filippo Giannazzo, Salvatore Ethan Panasci, Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Marco Cannas, Simonpietro Agnello, Antal Koos, Béla Pécz, Marianna Španková, Štefan Chromik

Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H‐SiC

Advanced Materials Interfaces [], Pages: 2201502

Marilena Vivona, Filippo Giannazzo, Gabriele Bellocchi, Salvatore Ethan Panasci, Simonpietro Agnello, Paolo Badalà, Anna Bassi, Corrado Bongiorno, Salvatore Di Franco, Simone Rascunà, Fabrizio Roccaforte

Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 9 Pages: 4514-4520

Filippo Giannazzo, Salvatore E Panasci, Emanuela Schilirò, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz

Esaki Diode Behavior in Highly Uniform MoS2/Silicon Carbide Heterojunctions

Advanced Materials Interfaces [], Volume: 9 Issue: 22 Pages: 2200915

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Correction to “Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate”

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 14 Issue: 31 Pages: 36287-36287

Antonio Valletta, Fabrizio Roccaforte, Antonino La Magna, Guglielmo Fortunato, Patrick Fiorenza

Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs

Semiconductor Science and Technology [IOP Publishing],

F Roccaforte

S. Monnoye2, e, H. Mank2, f, M. Zielinski2, 9, F. La Via1, h

Silicon Carbide and Related Materials 2021 [Trans Tech Publications Ltd], Volume: 1062 Pages: 400

Patrick Fiorenza, Emanuela Schilirò, Giuseppe Greco, Marilena Vivona, Marco Cannas, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

Applied Surface Science [North-Holland], Volume: 579 Pages: 152136

Raffaella Lo Nigro, Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Fabrizio Roccaforte

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and GalliumNitride Electronic Devices

Materials [Multidisciplinary Digital Publishing Institute], Volume: 15 Issue: 3 Pages: 830

F Giannazzo, G Greco, Y Cordier, F Roccaforte

Towards ballistic vertical transistors by graphene integration with nitride semiconductors

Il nuovo cimento C [Societa italiana di fisica], Volume: 45 Issue: 6 Pages: 1-4

Salvatore E Panasci, Antal Koos, Emanuela Schilirò, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Attila Sulyok, Miklos Nemeth, Béla Pécz, Filippo Giannazzo

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 2 Pages: 182

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Francesca Monforte, Guglielmo Guido Condorelli, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro

Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

ACS Applied Electronic Materials [American Chemical Society],

Marilena Vivona, Gabriele Bellocchi, Raffaella Lo Nigro, Simone Rascunà, Fabrizio Roccaforte

Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures

Semiconductor Science and Technology [IOP Publishing], Volume: 37 Issue: 1 Pages: 015012

Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3316

Peter Wellmann, Michael Schöler, Philipp Schuh, Mike Jennings, Fan Li, Roberta Nipoti, Andrea Severino, Ruggero Anzalone, Fabrizio Roccaforte, Massimo Zimbone, Francesco La Via

Status of 3C-SiC Growth and Device Technology

Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications [John Wiley & Sons],

SE Panasci, E Schilirò, F Migliore, M Cannas, FM Gelardi, F Roccaforte, F Giannazzo, S Agnello

Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2 produced by gold-assisted exfoliation

Applied Physics Letters [AIP Publishing LLC], Volume: 119 Issue: 9 Pages: 093103

Emanuela Schilirò, Raffaella Lo Nigro, Salvatore E Panasci, Simonpietro Agnello, Marco Cannas, Franco M Gelardi, Fabrizio Roccaforte, Filippo Giannazzo

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer exfoliated on gold: the role of the substrate

arXiv preprint arXiv:2108.09542 [],

Marilena Vivona, Giuseppe ,Greco, Monia Spera, Patrick Fiorenza, Filippo Giannazzo, Antonino La Magna, Fabrizio Roccaforte

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Journal of Physics D: Applied Physics [IOP], Volume: 54 Issue: 44 Pages: 445107

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Mario S Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Applied Surface Science [North-Holland], Volume: 557 Pages: 149752

Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Marco Cannas, Franco M Gelardi, Simonpietro Agnello, Fabrizio Roccaforte, Filippo Giannazzo

Strain, Doping, and Electronic Transport of Large Area Monolayer MoS2 Exfoliated on Gold and Transferred to an Insulating Substrate

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 13 Issue: 26 Pages: 31248-31259

G Greco, P Fiorenza, M Spera, F Giannazzo, F Roccaforte

Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [AIP Publishing LLC], Volume: 129 Issue: 23 Pages: 234501

Patrick Fiorenza, Mario S Alessandrino, Beatrice Carbone, Alfio Russo, Fabrizio Roccaforte, Filippo Giannazzo

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 1626

G Bellocchi, M Vivona, C Bongiorno, P Badalà, A Bassi, S Rascuna, F Roccaforte

Barrier Height Tuning in Ti/4H-SiC Schottky diodes

Solid-State Electronics [Pergamon], Volume: 186 Pages: 108042

Emanuela Schilirò, Patrick Fiorenza, Corrado Bongiorno, Corrado Spinella, Salvatore Di Franco, Giuseppe Greco, Raffaella Lo Nigro, Fabrizio Roccaforte

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP Advances [AIP Publishing LLC], Volume: 10 Issue: 12 Pages: 125017

Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

Correlation between the interfacial charge trapping and chemical properties of deposited SiO2 layers in 4H-SiC MOSFETs subjected to different nitridations

arXiv e-prints [], Pages: arXiv: 2012.08829

Marilena Vivona, Giuseppe Greco, Gabriele Bellocchi, Luca Zumbo, Salvatore Di Franco, Mario Saggio, Simone Rascunà, Fabrizio Roccaforte

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 54 Issue: 5 Pages: 055101

E Schilirò, R Lo Nigro, SE Panasci, FM Gelardi, S Agnello, Rositsa Yakimova, F Roccaforte, F Giannazzo

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Carbon [Pergamon], Volume: 169 Pages: 172-181

F Giannazzo, R Dagher, E Schilirò, SE Panasci, G Greco, G Nicotra, F Roccaforte, S Agnello, J Brault, Y Cordier, A Michon

Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Nanotechnology [IOP Publishing], Volume: 32 Issue: 1 Pages: 015705

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Fabrizio Roccaforte

Technologies for Normally-off GaN HEMTs

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 137-175

Patrick Fiorenza, Filippo Giannazzo, Salvatore Cascino, Mario Saggio, Fabrizio Roccaforte

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO/4H-SiC MOSFETs

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 10 Pages: 103502

Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Ewa Grzanka, Mike Leszczynski, Filippo Giannazzo, Fabrizio Roccaforte

Thermal annealing effect on electrical and structural properties of Tungsten carbide Schottky contacts on AlGaN/GaN heterostructures

Semiconductor Science and Technology [IOP Publishing], Volume: 35 Issue: 10 Pages: 105004

Monia Spera, Giuseppe Greco, Andrea Severino, Marilena Vivona, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide

Applied Physics Letters [AIP Publishing LLC], Volume: 117 Issue: 1 Pages: 013502

Giuseppe Fisicaro, Corrado Bongiorno, Ioannis Deretzis, Filippo Giannazzo, Francesco La Via, Fabrizio Roccaforte, Marcin Zielinski, Massimo Zimbone, Antonino La Magna

Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC

Applied Physics Reviews [AIP Publishing LLC], Volume: 7 Issue: 2 Pages: 021402

P Fiorenza, E Schilirò, F Giannazzo, C Bongiorno, M Zielinski, F La Via, F Roccaforte

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Applied Surface Science [North-Holland], Pages: 146656

Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte

Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 38 Issue: 3 Pages: 032410

Raffaella Lo Nigro, Emanuela Schilirò, Giovanni Mannino, Salvatore Di Franco, Fabrizio Roccaforte

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Journal of Crystal Growth [North-Holland], Pages: 125624

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4h-sic interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Volume: 9 Pages: 100528

Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

Advanced Electronic Materials [], Volume: 6 Issue: 2 Pages: 1901171

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900393

Alberto Sciuto, Antonino La Magna, Giuseppe GN Angilella, Renato Pucci, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo, Ioannis Deretzis

Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides

physica status solidi (RRL)–Rapid Research Letters [], Volume: 14 Issue: 2 Pages: 1900399

P Fiorenza, MS Alessandrino, B Carbone, C Di Martino, A Russo, M Saggio, C Venuto, E Zanetti, F Giannazzo, F Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing], Volume: 31 Issue: 12 Pages: 125203

Raffaella Lo Nigro, Emanuela Schilirò, Patrick Fiorenza, Fabrizio Roccaforte

Comparison between Single Al2O3 or HfO2 Single Dielectric Layers and their Nanolaminated Systems

Advanced Materials Letters [International Association of Advanced Materials], Volume: 11 Issue: 1 Pages: 1-5

Patrick Fiorenza, Mario Santo Alessandrino, Beatrice Carbone, Clarice Di Martino, Alfio Russo, Mario Saggio, Carlo Venuto, Edoardo Zanetti, Filippo Giannazzo, Fabrizio Roccaforte

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

Nanotechnology [IOP Publishing],

Paolo Badalà, Simone Rascunà, Brunella Cafra, Anna Bassi, Emanuele Smecca, Massimo Zimbone, Corrado Bongiorno, Cristiano Calabretta, Francesco La Via, Fabrizio Roccaforte, Mario Saggio, Giovanni Franco, Angelo Messina, Antonino La Magna, Alessandra Alberti

Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact

Materialia [Elsevier], Pages: 100528

Filippo Giannazzo, Giuseppe Greco, Emanuela Schilirò, Raffaella Lo Nigro, Ioannis Deretzis, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Sebastiano Ravesi, Eric Frayssinet, Adrien Michon, Yvon Cordier

High performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors

ACS Applied Electronic Materials [American Chemical Society], Volume: 1 Issue: 11 Pages: 2342-2354

Emanuela Schilirò, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Giuseppe Greco, Fabrizio Roccaforte, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Marcin Krysko, Adrien Michon, Yvon Cordier, Ildiko Cora, Bela Pecz, Hassan Gargouri, Raffaella Lo Nigro

Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 35-39

S Rascunà, P Badalà, C Tringali, C Bongiorno, E Smecca, A Alberti, S Di Franco, F Giannazzo, G Greco, F Roccaforte, M Saggio

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 97 Pages: 62-66

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 10 Pages: 1599

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Angelo Armano, Simonpietro Agnello, Bela Pecz, Ivan G Ivanov, Rositsa Yakimova, Filippo Giannazzo

Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al2O3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

Advanced Materials Interfaces [], Volume: 6 Issue: 10 Pages: 1900097

F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, F Iucolano, G Greco

Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride

Materials Science in Semiconductor Processing [Pergamon], Volume: 94 Pages: 164-170

Pawel Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, G Greco, F Roccaforte, M Leszczynski

Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 153-157

Monia Spera, Domenico Corso, Salvatore Di Franco, Giuseppe Greco, Andrea Severino, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

Patrick Fiorenza, Marilena Vivona, Salvatore Di Franco, Emanuele Smecca, Salvatore Sanzaro, Alessandra Alberti, Mario Saggio, Fabrizio Roccaforte

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294

Monia Spera, Giuseppe Greco, R Lo Nigro, Corrado Bongiorno, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 295-298

Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Silvia Scalese, Corrado Bongiorno, Marco Cannas, Filippo Giannazzo, Fabrizio Roccaforte

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 14 Pages: 2655

Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, Fabrizio Roccaforte

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 21 Pages: 3468

Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Ioannis Deretzis, Antonino La Magna, Béla Pécz

Seed-Layer-Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

ADVANCED MATERIALS INTERFACES [Wiley-VCH Verlag GmbH & Co. KGaA.], Pages: 1-11

Filippo Giannazzo, Matteo Bosi, Filippo Fabbri, Emanuela Schilirò, Giuseppe Greco, Fabrizio Roccaforte

Direct Probing of Grain Boundary Resistance in CVD‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy

physica status solidi (RRL)–Rapid Research Letters [], Issue: 1900393

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681

F Giannazzo, G Greco, E Schilirò, S Di Franco, I Deretzis, G Nicotra, A La Magna, F Roccaforte

Nanoscale electrical mapping of two-dimensional materials by conductive atomic force microscopy for transistors applications

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1990 Issue: 1 Pages: 020008

Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Electron trapping at SiO 2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Review of technology for normally-off HEMTs with p-GaN gate

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 96-106

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 111-117

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors

physica status solidi (a) [], Volume: 215 Issue: 10 Pages: 1700653

Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Ferdinando Iucolano, Raffaella Lo Nigro, Fabrizio Roccaforte

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa, Mike Jennings

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Materials Science Forum [], Volume: 924 Pages: 913

Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa, Mike Jennings

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

Materials Science Forum [], Volume: 924 Pages: 913

Monia Spera, Cristina Miccoli, Raffaella Lo Nigro, Corrado Bongiorno, Domenico Corso, Salvatore Di Franco, Ferdinando Iucolano, Fabrizio Roccaforte, Giuseppe Greco

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

Materials Science in Semiconductor Processing [Pergamon],

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Ferdinando Iucolano, Mario Saggio

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic Engineering [Elsevier], Volume: 187 Pages: 66-77

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon],

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta K Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 6 Issue: 10 Pages: P741

M Vivona, G Greco, C Bongiorno, R Lo Nigro, S Scalese, F Roccaforte

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Applied Surface Science [North-Holland], Volume: 420 Pages: 331-335

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

Rositsa Yakimova, Ivan G Ivanov, Lasse Vines, Margareta Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius

Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes

ECS Meeting Abstracts [IOP Publishing], Issue: 31 Pages: 1325

G Greco, S Di Franco, F Iucolano, F Giannazzo, F Roccaforte

Temperature dependence of the I–V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates

physica status solidi (a) [], Volume: 214 Issue: 9 Pages: 1600764

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Giuseppe Nicotra, Corrado Spinella, Michelangelo Scopelliti, Bruno Pignataro, Simonpietro Agnello, Fabrizio Roccaforte

Ambipolar MoS2 transistors by nanoscale tailoring of Schottky barrier using oxygen plasma functionalization

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 27 Pages: 23164-23174

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator

IEEE Transactions on Electron Devices [IEEE],

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899

F Roccaforte

P. Fiorenza1, a,*, A. La Magna1, b, M. Vivona¹º, F. Giannazzo1d

Silicon Carbide and Related Materials 2016 [Trans Tech Publications Ltd], Pages: 123

Chamseddine Bouhafs, AA Zakharov, Ivan Gueorguiev Ivanov, F Giannazzo, Jens Eriksson, Vallery Stanishev, P Kühne, Tihomir Iakimov, Tino Hofmann, Mathias Schubert, F Roccaforte, Rositsa Yakimova, Vanya Darakchieva

Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC

Carbon [Pergamon], Volume: 116 Pages: 722-732

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600357

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pecz, Rositsa Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600460

Gabriele Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS Applied Materials & Interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771

Gabriele Fisichella, Stella Lo Verso, Silvestra Di Marco, Vincenzo Vinciguerra, Emanuela Schilirò, Salvatore Di Franco, Raffaella Lo Nigro, Fabrizio Roccaforte, Amaia Zurutuza, Alba Centeno, Sebastiano Ravesi, Filippo Giannazzo

Advances in the fabrication of graphene transistors on flexible substrates

Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 467-474

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere

Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 418-424

Giuseppe Greco, Filippo Giannazzo, Fabrizio Roccaforte

Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model

Journal of Applied Physics [AIP Publishing LLC], Volume: 121 Issue: 4 Pages: 045701

Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 8 Issue: 1 Pages: 254-263

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Raffaella Lo Nigro

Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01B140

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 35 Issue: 1 Pages: 01A101

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Emanuela Schilirò, Ioannis Deretzis, Raffaella Lo Nigro, Antonino La Magna, Fabrizio Roccaforte, Ferdinando Iucolano, Stella Lo Verso, Sebastiano Ravesi, Pawel Prystawko, Piotr Kruszewski, Mike Leszczyński, Roy Dagher, Eric Frayssinet, Adrien Michon, Yvon Cordier

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

physica status solidi (a) [],

T Sledziewski, M Vivona, K Alassaad, Pawel Kwasnicki, R Arvinte, S Beljakowa, HB Weber, F Giannazzo, Herve Peyre, V Souliere, T Chassagne, M Zielinski, Sandrine Juillaguet, G Ferro, F Roccaforte, M Krieger

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 20 Pages: 205701

F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, F Roccaforte

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 11 Pages: 797-801

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

physica status solidi (a) [],

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al 2 O 3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

Ohmic contacts to Gallium Nitride materials

Applied Surface Science [North-Holland], Volume: 383 Pages: 324-345

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

Substrate and atmosphere influence on oxygen p-doped graphene

Carbon [Pergamon], Volume: 107 Pages: 696-704

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

Graphene integration with nitride semiconductors for high power and high frequency electronics

physica status solidi (a) [],

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Simonpietro Agnello

Effect of air on oxygen p‐doped graphene on SiO2

physica status solidi (a) [], Volume: 213 Issue: 9 Pages: 2341-2344

Emanuela Schilirò, Raffaella Lo Nigro, Patrick Fiorenza, Fabrizio Roccaforte

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP Advances [AIP Publishing LLC], Volume: 6 Issue: 7 Pages: 075021

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Fabrizio Roccaforte

Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 1 Pages: 012102

Giuseppe Greco, Ferdinando Iucolano, Salvatore Di Franco, Corrado Bongiorno, Alfonso Patti, Fabrizio Roccaforte

Effects of annealing treatments on the properties of Al/Ti/p-GaN interfaces for normally OFF p-GaN HEMTs

IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 7 Pages: 2735 - 2741

F Giannazzo, G Fisichella, G Greco, F Roccaforte

Challenges in graphene integration for high-frequency electronics

AIP Conference Proceedings [AIP Publishing LLC], Volume: 1749 Issue: 1 Pages: 020004

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H–SiC interfaces

Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

M Vivona, P Fiorenza, T Sledziewski, M Krieger, T Chassagne, M Zielinski, F Roccaforte

Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895

F Giannazzo, G Fisichella, A Piazza, S Di Franco, IP Oliveri, S Agnello, F Roccaforte

Current injection from metal to MoS 2 probed at nanoscale by conductive atomic force microscopy

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 174-178

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, F Roccaforte, M Cannas, FM Gelardi, S Agnello

Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere

The Journal of Physical Chemistry C [American Chemical Society], Volume: 119 Issue: 39 Pages: 22718-22723

F Giannazzo, G Fisichella, A Piazza, S Agnello, F Roccaforte

Nanoscale inhomogeneity of the Schottky barrier and resistivity in MoS 2 multilayers

Physical Review B [American Physical Society], Volume: 92 Issue: 8 Pages: 081307

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [Science Publishing Group], Volume: 1 Issue: 1 Pages: 1

M Vivona, G Greco, R Lo Nigro, C Bongiorno, F Roccaforte

Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

Journal of Applied Physics [AIP Publishing LLC], Volume: 118 Issue: 3 Pages: 035705

Raffaella Lo Nigro, Gabriele Fisichella, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

An insight into the epitaxial nanostructures of NiO and CeO 2 thin film dielectrics for AlGaN/GaN heterostructures

Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Cristina Tudisco, Guglielmo Guido Condorelli, Salvatore Di Franco, Fabrizio Roccaforte, Raffaella Lo Nigro

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984

A Sciuto, M Mazzillo, S Di Franco, F Roccaforte, G D'Arrigo

Visible Blind 4H-SiC P $^{+} $-N UV Photodiode Obtained by Al Implantation

IEEE Photonics Journal [IEEE], Volume: 7 Issue: 3 Pages: 1-6

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Salvatore Di Franco, Raffaella Lo Nigro, Filippo Giannazzo, Pawel Prystawko, Piotr Kruszewski, Marcin Krysko, Ewa Grzanka, Michał Leszczynski, Cristina Tudisco, Guglielmo Guido Condorelli, Fabrizio Roccaforte

Electrical and structural properties of Ti/Al‐based contacts on AlGaN/GaN heterostructures with different quality

physica status solidi (a) [], Volume: 212 Issue: 5 Pages: 1091-1098

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 14 Pages: 142903

Gabriele Fisichella, Giuseppe Greco, Salvatore Di Franco, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructures

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 11 Issue: 11‐12 Pages: 1551-1555

G Fisichella, P Fiorenza, R Yakimova, F Roccaforte

F. Giannazzo”, I. Deretzis", A. La Magna', G. Nicotra', C. Spinella"

HeteroSiC & WASMPE 2013 [Trans Tech Publications Ltd], Volume: 806 Pages: 103-107

Patrick Fiorenza, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 14 Pages: 142108

Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Applied surface science [North-Holland], Volume: 314 Pages: 546-551

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

G Fisichella, G Greco, F Roccaforte, F Giannazzo

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 6 Pages: 063117

Raffaella Lo Nigro, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55

K Alassaad, M Vivona, V Soulière, B Doisneau, F Cauwet, D Chaussende, F Giannazzo, F Roccaforte, Gabriel Ferro

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 3 Issue: 8 Pages: P285

G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo

Microscopic mechanisms of graphene electrolytic delamination from metal substrates

Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 23 Pages: 233105

M Vivona, G Greco, F Giannazzo, R Lo Nigro, S Rascunà, M Saggio, F Roccaforte

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n-and p-implanted 4H-SiC

Semiconductor Science and Technology [IOP Publishing], Volume: 29 Issue: 7 Pages: 075018

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, F Roccaforte, A La Magna

High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)

Journal of crystal growth [North-Holland], Volume: 393 Pages: 150-155

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

F Giannazzo, I Deretzis, G Nicotra, G Fisichella, C Spinella, F Roccaforte, A La Magna

Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy

Applied surface science [North-Holland], Volume: 291 Pages: 53-57

Gabriele Fisichella, Giuseppe Greco, Fabrizio Roccaforte, Filippo Giannazzo

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale

Nanoscale [Royal Society of Chemistry], Volume: 6 Issue: 15 Pages: 8671-8680

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 20 Pages: 201604

P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 15 Pages: 153508

Raffaella Lo Nigro, Patrick Fiorenza, Maria R Catalano, Gabriele Fisichella, Fabrizio Roccaforte, Graziella Malandrino

Binary and complex oxide thin films for microelectronic applications: An insight into their growth and advanced nanoscopic investigation

Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162

P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 11 Pages: 112905

G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 8 Pages: 083717

F Giannazzo, G Fisichella, R Lo Nigro, P Fiorenza, S Di Franco, A Marino, N Piluso, E Rimini, F Roccaforte

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate‐supported graphene

physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192

Fabrizio Roccaforte, Patrick Fiorenza, Filippo Giannazzo

Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 8 Pages: N3006

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254

Gabriele Fisichella, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Cristina Tudisco, Guido G Condorelli, Nicolò Piluso, Noemi Spartà, Stella Lo Verso, Corrado Accardi, Cristina Tringali, Sebastiano Ravesi, Filippo Giannazzo

Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 439

Mike Leszczynski, Pawel Prystawko, Jerzy Plesiewicz, Leslaw Dmowski, Elzbieta Litwin-Staszewska, Szymon Grzanka, Ewa Grzanka, Fabrizio Roccaforte

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

ECS Transactions [IOP Publishing], Volume: 50 Issue: 3 Pages: 163

F Giannazzo, I Deretzis, A La Magna, F Roccaforte, Rositsa Yakimova

Electronic transport at monolayer-bilayer junctions in epitaxial graphene on SiC

Physical Review B [American Physical Society], Volume: 86 Issue: 23 Pages: 235422

LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 19 Pages: 193501

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172901

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 8 Pages: 084501

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Vito Raineri, Graziella Malandrino, Raffaella Lo Nigro

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 100 Issue: 6 Pages: 063511

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Publisher’s Note:“Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors”[Appl. Phys. Lett. 99 …

Applied Physics Letters [], Volume: 99 Issue: 25 Pages: 259901

G Greco, P Prystawko, M Leszczyński, R Lo Nigro, V Raineri, F Roccaforte

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 12 Pages: 123703

Alessia Frazzetto, Filippo Giannazzo, Raffaella Lo Nigro, Salvatore Di Franco, Corrado Bongiorno, Mario Saggio, Edoardo Zanetti, Vito Raineri, Fabrizio Roccaforte

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale research letters [SpringerOpen], Volume: 6 Issue: 1 Pages: 1-6

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120

Giuseppe Greco, Filippo Giannazzo, Alessia Frazzetto, Vito Raineri, Fabrizio Roccaforte

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 132

Alessandra Alberti, Fabrizio Roccaforte, Sebania Libertino, Corrado Bongiorno, Antonino La Magna

Schottky barrier inhomogeneities in nickel silicide transrotational contacts

Applied Physics Express [IOP Publishing], Volume: 4 Issue: 11 Pages: 115701

Jens Eriksson, Fabrizio Roccaforte, Ming-Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at< formula>< roman> SiO< inf> 2-3< roman> C-< roman> S i C Interfaces

AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1

Massimo Mazzillo, Antonella Sciuto, Giuseppe Catania, Fabrizio Roccaforte, Vito Raineri

Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes

IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130

Massimo Mazzillo, Antonella Sciuto, Giuseppe Catania, Fabrizio Roccaforte, Vito Raineri

Temperature and light induced effects on the capacitance of 4H-SiC Schottky photodiodes

IEEE Sensors Journal [IEEE], Volume: 12 Issue: 5 Pages: 1127-1130

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters [American Institute of Physics], Volume: 99 Issue: 7 Pages: 072117

A Frazzetto, F Giannazzo, R Lo Nigro, V Raineri, F Roccaforte

Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 44 Issue: 25 Pages: 255302

A FRAZZETTO, F GIANNAZZO, R LO NIGRO, V RAINERI, F ROCCAFORTE

Structural and transport properties in alloyed Ti

Journal of physics. D, Applied physics [Institute of Physics], Volume: 44 Issue: 25

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces

Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 1 Pages: 013707

A Sciuto, G D'Arrigo, F Roccaforte, M Mazzillo, RC Spinella, V Raineri

Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications

IEEE transactions on electron devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599

A Sciuto, G D'Arrigo, F Roccaforte, M Mazzillo, RC Spinella, V Raineri

Interdigit 4H-SiC vertical Schottky diode for betavoltaic applications

IEEE Transactions on Electron Devices [IEEE], Volume: 58 Issue: 3 Pages: 593-599

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri

Evolution of the electrical characteristics of Pt/3C‐SiC Schottky contacts upon thermal annealing

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 75-78

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces

AIP Conference Proceedings [American Institute of Physics], Volume: 1292 Issue: 1 Pages: 47-50

F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri

Surface and interface issues in wide band gap semiconductor electronics

Applied Surface Science [North-Holland], Volume: 256 Issue: 19 Pages: 5727-5735

Fabrizio Roccaforte, Ming-Hung Weng, Corrado Bongiorno, Filippo Giannazzo, Ferdinando Iucolano, Vito Raineri

Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC

Applied Physics A [Springer-Verlag], Volume: 100 Issue: 1 Pages: 197-202

Antonella Sciuto, Massimo Mazzillo, Vito Raineri, Giuseppe Catania, Giuseppe D'Arrigo, Fabrizio Roccaforte

On the aging effects of 4H-SiC Schottky photodiodes under high intensity mercury lamp irradiation

IEEE Photonics Technology Letters [IEEE], Volume: 22 Issue: 11 Pages: 775-777

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Au/Si nanodroplets towards Si nanowires formation: Characterization of the thermal-induced self-organization mechanism

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 6 Issue: 1 Pages: 012032

Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Edoardo Zanetti, Alfonso Ruggiero, Mario Saggio, Vito Raineri

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC

Solid State Phenomena [], Volume: 862 Issue: 156 Pages: 493

Massimo Mazzillo, Giovanni Condorelli, Maria Eloisa Castagna, Giuseppe Catania, Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

Highly efficient low reverse biased 4H-SiC Schottky photodiodes for UV-light detection

IEEE Photonics Technology Letters [IEEE], Volume: 21 Issue: 23 Pages: 1782-1784

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri

Toward an ideal Schottky barrier on 3 C-SiC

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 8 Pages: 081907

F Roccaforte, F Giannazzo, F Iucolano, C Bongiorno, V Raineri

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

Journal of Applied Physics [American Institute of Physics], Volume: 106 Issue: 2 Pages: 023703

F Giannazzo, F Roccaforte, F Iucolano, V Raineri, F Ruffino, MG Grimaldi

Nanoscale current transport through Schottky contacts on wide bandgap semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 27 Issue: 2 Pages: 789-794

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri, C Bongiorno, C Spinella

Kinetic mechanisms of the in situ electron beam-induced self-organization of gold nanoclusters in SiO2

Journal of Physics D: Applied Physics [IOP Publishing], Volume: 42 Issue: 7 Pages: 075304

Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Improved Ni/3 C-SiC contacts by effective contact area and conductivity increases at the nanoscale

Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 11 Pages: 112104

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, C Spinella

Normal and abnormal grain growth in nanostructured gold film

Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 5 Pages: 054311

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Atomic force microscopy study of the kinetic roughening in nanostructured gold films on SiO2

Nanoscale research letters [SpringerOpen], Volume: 4 Issue: 3 Pages: 262-268

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 4 Issue: 3 Pages: 262-268

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2

Nanoscale research letters [SpringerOpen], Volume: 3 Issue: 11 Pages: 454-460

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093706

F Ruffino, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri

Microstructure of Au nanoclusters formed in and on SiO 2

Superlattices and Microstructures [Academic Press], Volume: 44 Issue: 4-5 Pages: 588-598

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si (100): size and roughness evolution

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 2 Pages: 024310

Fabrizio Roccaforte, Filippo Giannazzo, Ferdinando Iucolano, Corrado Bongiorno, Vito Raineri

Two-dimensional electron gas insulation by local surface thin thermal oxidation in Al Ga N∕ Ga N heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 25 Pages: 252101

Antonella Sciuto, Fabrizio Roccaforte, Vito Raineri

Electro-optical response of ion-irradiated 4 H-Si C Schottky ultraviolet photodetectors

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 9 Pages: 093505

Filippo Giannazzo, Fabrizio Roccaforte, Dario Salinas, Vito Raineri

Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 603

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1215

Håkan Andersson, Peter Berkesand

Linköping University Electronic Press

Policy [], Volume: 2007 Issue: 2006 Pages: 2005

Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Valeria Puglisi, Vito Raineri

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 1341

F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals&58; Gold on/in SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 3 Issue: 11 Pages: 454-460

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Electrical properties of self-assembled nano-Schottky diodes

Journal of Nanomaterials [Hindawi], Volume: 2008

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Barrier inhomogeneity and electrical properties of Pt∕ Ga N Schottky contacts

Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 11 Pages: 113701

F Giannazzo, F Roccaforte, V Raineri

Acceptor, compensation, and mobility profiles in multiple Al implanted 4 H‐Si C

Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 20 Pages: 202104

A Sciuto, F Roccaforte, S Di Franco, V Raineri, S Billotta, G Bonanno

Photocurrent gain in 4 H-Si C interdigit Schottky UV detectors with a thermally grown oxide layer

Applied physics letters [American Institute of Physics], Volume: 90 Issue: 22 Pages: 223507

F Ruffino, C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2

Nanoscale Research Letters [SpringerOpen], Volume: 2 Issue: 5 Pages: 240-247

F Ruffino, R De Bastiani, MG Grimaldi, C Bongiorno, F Giannazzo, F Roccaforte, C Spinella, V Raineri

Self-organization of Au nanoclusters on the SiO 2 surface induced by 200keV-Ar+ irradiation

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 810-814

F Iucolano, F Giannazzo, F Roccaforte, L Romano, MG Grimaldi, V Raineri

Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 336-339

F Ruffino, A Canino, MG Grimaldi, F Giannazzo, C Bongiorno, F Roccaforte, V Raineri

Self-organization of gold nanoclusters on hexagonal SiC and Si O 2 surfaces

Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 6 Pages: 064306

F Giannazzo, F Roccaforte, V Raineri

High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 450-453

Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Vito Raineri

Temperature behavior of inhomogeneous Pt∕ Ga N Schottky contacts

Applied Physics Letters [American Institute of Physics], Volume: 90 Issue: 9 Pages: 092119

A Sciuto, F Roccaforte, S Di Franco, SF Liotta, G Bonanno, V Raineri

High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts

Superlattices and Microstructures [Academic Press], Volume: 41 Issue: 1 Pages: 29-35

F GIANNAZZO, C BONGIORNO, F ROCCAFORTE, V RAINERI, F RUFFINO, A CANINO, MG GRIMALDI

SELF-ORGANIZATION OF GOLD NANOCLUSTERS ON HEXAGONAL SIC AND SIO 2 SURFACES

JOURNAL OF APPLIED PHYSICS [American Institute of Physics], Volume: 101 Issue: 6

A Sciuto, F Roccaforte, S Di Franco, V Raineri, SF Liotta, S Billotta, G Bonanno, M Belluso

Chapter 5-SiC Devices-5.4 Sensors and Detectors-4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 945-948

C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals&58; gold in/on SiO&60; sub&62; 2&60;/sub&62

Nanoscale Research Letters [Directory of Open Access Journals], Volume: 2 Issue: 5 Pages: 240-247

F Giannazzo, F Roccaforte, SF Liotta, V Raineri

Chapter 3-SiC Characterization and Theory-3.3 Defects-Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 545-548

M Canino, F Giannazzo, F Roccaforte, A Poggi, S Solmi, V Raineri, R Nipoti

Chapter 4-SiC Processing-4.1 Doping and Implantation-Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 571-574

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in Si O 2

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 26 Pages: 263108

F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri

Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN

Journal of applied physics [American Institute of Physics], Volume: 100 Issue: 12 Pages: 123706

F Ruffino, MG Grimaldi, F Giannazzo, F Roccaforte, V Raineri

Size-dependent Schottky Barrier Height in self-assembled gold nanoparticles

Applied physics letters [AIP Publishing], Volume: 89 Issue: 24

F Roccaforte, F Iucolano, A Alberti, F Giannazzo, V Puglisi, C Bongiorno, S Di Franco, V Raineri

Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si (111)

Superlattices and Microstructures [Academic Press], Volume: 40 Issue: 4-6 Pages: 373-379

Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, Giovanni Bonanno

High responsivity 4 H-Si C Schottky UV photodiodes based on the pinch-off surface effect

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 8 Pages: 081111

F Roccaforte, F Iucolano, F Giannazzo, A Alberti, V Raineri

Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111)

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 2 Pages: 022103

FRVRSFLF Giannazzo, F Roccaforte, V Raineri, SF Liotta

Transport localization in heterogeneous Schottky barriers of quantum-defined metal films

EPL (Europhysics Letters) [IOP Publishing], Volume: 74 Issue: 4 Pages: 686

A Ruggiero, S Libertino, F Roccaforte, F La Via, L Calcagno

Effects of implantation defects on the carrier concentration of 6H-SiC

Applied Physics A [Springer-Verlag], Volume: 82 Issue: 3 Pages: 543-547

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

High growth rate process in a SiC horizontal CVD reactor using HCl

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 48-50

G Galvagno, F Roccaforte, A Ruggiero, L Calcagno, E Zanetti, M Saggio, F Portuese, F La Via

Temperature dependence of the c-axis drift mobility in 4H–SiC

Microelectronic engineering [Elsevier], Volume: 83 Issue: 1 Pages: 45-47

F Roccaforte, S Libertino, V Raineri, A Ruggiero, V Massimino, L Calcagno

Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes

Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 1 Pages: 013515

Fabrizio Roccaforte, Francesco La Via, Vito Raineri

Ohmic contacts to SiC

International journal of high speed electronics and systems [World Scientific Publishing Company], Volume: 15 Issue: 04 Pages: 781-820

F La Via, G Galvagno, F Roccaforte, A Ruggiero, L Calcagno

Drift mobility in 4H-SiC Schottky diodes

Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 14 Pages: 142105

L Calcagno, A Ruggiero, F Roccaforte, F La Via

Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

Journal of Applied Physics [American Institute of Physics], Volume: 98 Issue: 2 Pages: 023713

F Roccaforte, S Libertino, F Giannazzo, C Bongiorno, F La Via, V Raineri

Ion irradiation of inhomogeneous Schottky barriers on silicon carbide

Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 12 Pages: 123502

D Alquier, C Bongiorno, F Roccaforte, V Raineri

Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 21 Pages: 211911

D Crippa, GL Valente, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, G Abbondanza, G Abbagnale, A Veneroni, F Omarini, L Zamolo, M Masi, F Roccaforte, G Giannazzo, S Di Franco, F La Via

Chapter 2-SiC Epitaxy-2.1 Homoepitaxial Growth-New Achievements on CVD Based Methods for SiC Epitaxial Growth

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 67-72

A Ruggiero, M Zimbone, F Roccaforte, S Libertino, F La Via, R Reitano, L Calcagno

Chapter 4-SiC Characterization-4.3 Defects-Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 485-488

F Roccaforte, F Giannazzo, C Bongiorno, S Libertino, F La Via, V Raineri

Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 729-732

R Pierobon, G Meneghesso, E Zanoni, F Roccaforte, F La Via, V Raineri

Chapter 6-SiC Devices-6.2 Unipolar diodes-Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 933-936

F La Via, F Roccaforte, S Di Franco, A Ruggiero, L Neri, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, G Abbondanza, G Abbagnale, GL Valente, D Crippa

Chapter 4-SiC Characterization-4.2 Optical and Electrical-Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 483485 Pages: 429-432

F Giannazzo Roccaforte, S Di Franco, F La Viaf

D. Crippa¹a, GL Valente¹ 1, A. Ruggiero², L. Neri², 2, R. Reitano², L. Calcagno2. b

Silicon Carbide and Related Materials 2004: ECSCRM 2004: Proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31-September 4 2004, Bologna, Italy [Trans Tech Publications], Volume: 483 Pages: 67