2005 | IMM Container

Origin: Silicon Carbide and Related Materials 2004: ECSCRM 2004: Proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31-September 4 2004, Bologna, Italy

AGE-RELATED CHANGE OF MITOCHONDRIAL DNA CONTENT IN DIFFERENT RAT TISSUES: EFFECT OF CALORIC RESTRICTION DIET

A Lezza, C Leeuwenburgh, P Cantatore, A Sciancalepore, M Gadaleta, P Cassano

2005-01-01

Biblio references: Volume: 54 Issue: 1/2 Pages: 14

Origin: ITALIAN JOURNAL OF BIOCHEMISTRY

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Partial self-ordering observed in silicon nanoclusters deposited on silicon oxide substrates by chemical vapor

RA Puglisi, G Nicotra, S Lombardo, C Spinella, G Ammendola, C Gerardi

2005-01-01

Biblio references: Volume: 71 Issue: 12 Pages: 125322-125322

Origin: Physical Review-Section B-Condensed Matter

PAPERS FROM THE 14TH INTERNATIONAL WORKSHOP ON ROOM-TEMPERATURE SEMICONDUCTOR X-AND GAMMA-RAY DETECTORS-RTSD--CZT and CdTe Growth and Characterization-Charge Transients Locally Induced by

II Feirella, AA Cola, EE Caroli, AA Donati, WW Dusi, GG Ventura, EE Perillo

2005-01-01

Biblio references: Volume: 52 Issue: 5 Pages: 1968-1974

Origin: IEEE Transactions on Nuclear Science

Six patients with Pro250Arg mutation in FGFR3 in a family with coronal craniosynostosis: intrafamilial variabilità and clinical management

MARIA PICCIONE, ETTORE PIRO, GIOVANNI CORSELLO, SALVATORE LOMBARDO

2005-01-01

Biblio references:

Origin: THE ITALIAN JOURNAL OF PEDIATRICS.

Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing

F Bergamini, F Moscatelli, M Canino, A Poggi, R Nipoti

2005-01-01

Biblio references: Volume: 483485 Pages: 625-628

Origin: Materials Science Forum

Buccolierif

A Leone, C Distante

2005-01-01

Biblio references: Volume: 376

Origin: A texture-based approach for shadow detection IEEE Conference on Advanced Video and Signal Based Surveillance. Washingtorr IEEE

Six patients with Pro250Arg mutation in FGFR3 in a family with coronal craniosynostosis: intrafamilial variability and clinical management

Si quantum dots for nano electronics: From materials to applications

Chapter 5-SiC Technology-5.2 Dielectrics and Passivation Layers-Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC

D. Crippa¹a, GL Valente¹ 1, A. Ruggiero², L. Neri², 2, R. Reitano², L. Calcagno2. b

AGE-RELATED CHANGE OF MITOCHONDRIAL DNA CONTENT IN DIFFERENT RAT TISSUES: EFFECT OF CALORIC RESTRICTION DIET

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Partial self-ordering observed in silicon nanoclusters deposited on silicon oxide substrates by chemical vapor

PAPERS FROM THE 14TH INTERNATIONAL WORKSHOP ON ROOM-TEMPERATURE SEMICONDUCTOR X-AND GAMMA-RAY DETECTORS-RTSD--CZT and CdTe Growth and Characterization-Charge Transients Locally Induced by

Six patients with Pro250Arg mutation in FGFR3 in a family with coronal craniosynostosis: intrafamilial variabilità and clinical management

Chapter 5-SiC Technology-5.1 Doping and Implantation-Ar Annealing at 1600 (degree) C and 1650 (degree) C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the JV Characteristics Versus Annealing

Buccolierif

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