2005 | IMM Container

Chapter 4-SiC Characterization-4.3 Defects-Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

A Ruggiero, M Zimbone, F Roccaforte, S Libertino, F La Via, R Reitano, L Calcagno

2005-01-01

Biblio references: Volume: 483485 Pages: 485-488

Origin: Materials Science Forum

SPADA: An array of SPAD detectors for astrophysical applications

Giovanni Bonanno, Massimiliano Belluso, Franco Zappa, Simone Tisa, Sergio Cova, Piera Maccagnani, Domenico Bonaccini Calia, Roberto Saletti, Roberto Roncella, Sergio Billotta

2005-01-01

Biblio references: Volume: 19 Issue: 1 Pages: 163-168

Origin: Experimental Astronomy

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects

Arianna Creti, Marco Anni, Margherita Zavelani Rossi, Guglielmo Lanzani, Gabriella Leo, Fabio Della Sala, Liberato Manna, Mauro Lomascolo

2005-01-01

Biblio references: Volume: 72 Issue: 12 Pages: 125346-125346

Origin: Physical Review-Section B-Condensed Matter

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-X-ray absorption study of the growth of Y2O3 on Si (001)

M Malvestuto, R Carboni, F Boscherini, F D'Acapito, S Spiga, M Fanciulli, A Dimoulas, G Vellianitis, G Mavrou

2005-01-01

Biblio references: Volume: 71 Issue: 7 Pages: 75318-75318

Origin: Physical Review-Section B-Condensed Matter

PHOTONICS DEVICES BASED ON HYBRID APPROACH COMBIPHOTONICS DEVICES BASED ON HYBRID APPROACH COMBINING LIQUID CRYSTALS AND SOL-GEL WAVEGUIDES

G Abbate, L Sirleto, G Coppola, GC Righini

2005-01-01

Biblio references: Volume: 429 Pages: 149-165

Origin: MOLECULAR CRYSTALS AND LIQUID CRYSTALS

Semiconductor Devices, Materials, and Processing-Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching

S Scalese, A La Magna, M Italia, S Pannitteri, V Privitera, R Duffy, MJP Hopstaken

2005-01-01

Biblio references: Volume: 152 Issue: 4 Pages: G277

Origin: Journal of the Electrochemical Society

Chapter 4-SiC Characterization-4.3 Defects-Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

SPADA: An array of SPAD detectors for astrophysical applications

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-X-ray absorption study of the growth of Y2O3 on Si (001)

PHOTONICS DEVICES BASED ON HYBRID APPROACH COMBIPHOTONICS DEVICES BASED ON HYBRID APPROACH COMBINING LIQUID CRYSTALS AND SOL-GEL WAVEGUIDES

Semiconductor Devices, Materials, and Processing-Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching

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Scientific Productions

Units in Italy

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Chapter 4-SiC Characterization-4.3 Defects-Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers

SPADA: An array of SPAD detectors for astrophysical applications

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Ultrafast carrier dynamics in core and core/shell CdSe quantum rods: Role of the surface and interface defects

Semiconductors II: Surfaces, interfaces, microstructures, and related topics-X-ray absorption study of the growth of Y2O3 on Si (001)

PHOTONICS DEVICES BASED ON HYBRID APPROACH COMBIPHOTONICS DEVICES BASED ON HYBRID APPROACH COMBINING LIQUID CRYSTALS AND SOL-GEL WAVEGUIDES

Semiconductor Devices, Materials, and Processing-Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching

Pages

Scientific Productions

Units in Italy

Contact info

Link Utili