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Part 2-Chapter 5-Processing of SiC-5.3 Oxides and Other Dielectrics-Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient

A Moscatelli, F Poggi, A Marino, G Scorzoni, R Sanmartin, M Nipoti

2006-01-01

Biblio references: Volume: 527529 Pages: 979-982

Origin: Materials Science Forum
Doppler-free absorption spectroscopy of CO~ 2 at 4.3 micron by means of a continuous-wave quantum cascade laser

A Castrillo, E De Tommasi, G Casa, L Gianfrani

2006-01-01

Biblio references: Volume: 30 Issue: D Pages: 225

Origin: EUROPHYSICS CONFERENCE ABSTRACTS ECA

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