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G Molas, Marc Bocquet, J Buckley, H Grampeix, M Gély, JP Colonna, F Martin, P Brianceau, V Vidal, C Bongiorno, S Lombardo, G Pananakakis, G Ghibaudo, B De Salvo, S Deleonibus

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2393-2399

Origin: Microelectronic Engineering

Vertically stacked non-volatile memory devices–material considerations

M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, K Kopalko, R Jakieła, S Yatsunenko, E Przeździecka, P Kruszewski, N Huby, G Tallarida, S Ferrari

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2434-2438

Origin: Microelectronic Engineering

Vacancy engineering by He induced nanovoids in crystalline Si

Atomistic modeling of F n V m complexes in pre-amorphized Si

Experimental approach to the selection of the components in the minimum noise fraction

Experimental approach to the selection of the components in the minimum noise fraction

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

Hydrogen gas sensing performance of Pt/SnO2 nanowires/SiC MOS devices

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

Vertically stacked non-volatile memory devices–material considerations

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