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A new methodology for characterizing the progressive BD of HfO2/SiO2 metal gate stacks

Roberto Pagano, Salvatore Lombardo, Felix R Palumbo, Stefania Carloni, Paul Kirsch, Siddarth Krishnan, Chadwin Young, Rino Choi, Gennadi Bersuker, James Stathis

2008-08-22

Biblio references: Volume: 14 Issue: 1 Pages: 303

Origin: ECS Transactions

Radiation Effects on Programmed NROM Cells

Domenico Corso, Andrea Palermo, Felix R Palumbo, Sebania Libertino, Salvatore Lombardo, Michael Lisiansky, Yakov Roizin

2008-08-22

Biblio references: Volume: 14 Issue: 1 Pages: 311

Origin: ECS Transactions

Size dependence of the Mössbauer recoilless fraction in β-Sn nanocrystals

R Mantovan, A Debernardi, M Fanciulli

2008-08-21

Biblio references: Volume: 20 Issue: 38 Pages: 385201

Origin: Journal of Physics: Condensed Matter

Nonhydrolytic Synthesis of High-Quality Anisotropically Shaped Brookite TiO2 Nanocrystals

Raffaella Buonsanti, Vincenzo Grillo, Elvio Carlino, Cinzia Giannini, Tobias Kipp, Roberto Cingolani, Pantaleo Davide Cozzoli

2008-08-20

Biblio references: Volume: 130 Issue: 33 Pages: 11223-11233

Origin: Journal of the American Chemical Society

Atomic layer deposition of NiO films on Si (100) using cyclopentadienyl-type compounds and ozone as precursors

HL Lu, G Scarel, C Wiemer, M Perego, S Spiga, M Fanciulli, G Pavia

2008-08-19

Biblio references: Volume: 155 Issue: 10 Pages: H807

Origin: Journal of The Electrochemical Society

Detailed arsenic concentration profiles at Si/SiO {sub 2} interfaces

Pei Lirong, Gerd Duscher, Christian Steen, Peter Pichler, Heiner Ryssel, Enrico Napolitani, Davide De Salvador, Alberto Maria Piro, Antonio Terrasi, Fabrice Severac, Filadelfo Cristiano, Karthik Ravichandran, Naveen Gupta, Wolfgang Windl

2008-08-15

Biblio references: Volume: 104 Issue: 4

Origin: Journal of Applied Physics

Structural properties and multiferroic phase diagram of K 0.6 Fe 0.6 II Fe 0.4 III F 3 fluoride with TTB structure

F Mezzadri, S Fabbrici, E Montanari, L Righi, G Calestani, E Gilioli, F Bolzoni, A Migliori

2008-08-15

Biblio references: Volume: 78 Issue: 6 Pages: 064111

Origin: Physical Review B

Detailed arsenic concentration profiles at Si/SiO 2 interfaces

Lirong Pei, Gerd Duscher, Christian Steen, Peter Pichler, Heiner Ryssel, Enrico Napolitani, Davide De Salvador, Alberto Maria Piro, Antonio Terrasi, Fabrice Severac, Filadelfo Cristiano, Karthik Ravichandran, Naveen Gupta, Wolfgang Windl

2008-08-15

Biblio references: Volume: 104 Issue: 4 Pages: 043507

Origin: Journal of Applied Physics

The CMS experiment at the CERN LHC

CMS Collaboration, R Adolphi

2008-08-14

Biblio references: Volume: 3

Origin: Journal of Instrumentation

The CMS experiment at the CERN LHC

CMS Collaboration, R Adolphi

2008-08-14

Biblio references: Volume: 3

Origin: Journal of Instrumentation

A new methodology for characterizing the progressive BD of HfO2/SiO2 metal gate stacks

Radiation Effects on Programmed NROM Cells

Size dependence of the Mössbauer recoilless fraction in β-Sn nanocrystals

Nonhydrolytic Synthesis of High-Quality Anisotropically Shaped Brookite TiO2 Nanocrystals

Atomic layer deposition of NiO films on Si (100) using cyclopentadienyl-type compounds and ozone as precursors

Detailed arsenic concentration profiles at Si/SiO {sub 2} interfaces

Structural properties and multiferroic phase diagram of K 0.6 Fe 0.6 II Fe 0.4 III F 3 fluoride with TTB structure

Detailed arsenic concentration profiles at Si/SiO 2 interfaces

The CMS experiment at the CERN LHC

The CMS experiment at the CERN LHC

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