Journals | IMM Container

M Cicioni, A Scorzoni, F Alimenti, P Placidi, L Roselli, S Zampolli, I Elmi, GC Cardinali, M Severi, S Marco, JM Gómez, F Palacio, B Mazzolai, A Mondini, V Raffa, V Mattoli, P Dario, R Ingles Bort, JL Ramirez, E Llobet, E Abad, T Becker

2006-02-01

Biblio references:

Origin: Sensors and microsystems––11th Italian conference, Lecce, Italy

Effects of implantation defects on the carrier concentration of 6H-SiC

A Ruggiero, S Libertino, F Roccaforte, F La Via, L Calcagno

2006-02-01

Biblio references: Volume: 82 Issue: 3 Pages: 543-547

Origin: Applied Physics A

Single-photon avalanche diode arrays for fast transients and adaptive optics

Franco Zappa, Simone Tisa, Sergio Cova, Piera Maccagnani, Domenico Bonaccini Calia, Roberto Saletti, Roberto Roncella, Giovanni Bonanno, Massimiliano Belluso

2006-01-30

Biblio references: Volume: 55 Issue: 1 Pages: 365-374

Origin: IEEE transactions on instrumentation and measurement

Defect-induced homogeneous amorphization of silicon: the role of defect structure and population

Giorgio Lulli, Eros Albertazzi, Simone Balboni, Luciano Colombo

2006-01-27

Biblio references: Volume: 18 Issue: 6 Pages: 2077

Origin: Journal of Physics: Condensed Matter

ANDREI ZENKEVICH AND YURI LEBEDINSKII Moscow Engineering Physics Institute-State university 115409 Moscow, Russian Federation

GIOVANNA SCAREL, MARCO FANCIULLI

2006-01-27

Biblio references: Pages: 147

Origin: Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices

Size effects on the electrical activation of low-energy implanted B in Si

F Giannazzo, V Raineri, E Bruno, S Mirabella, G Impellizzeri, F Priolo, E Napolitani

2006-01-27

Biblio references: Volume: 24 Issue: 1 Pages: 468-472

Origin: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Solution Synthesis of Thin Films in the SnO2− In2O3 System: A Case Study of the Mixing of Sol− Gel and Metal-Organic Solution Processes

Phase separation and dilution in implanted Mn x Ge 1− x alloys

Torsional potential of π-conjugated molecules using the localized Hartree–Fock Kohn–Sham exchange potential

Morphometric X-ray absorptiometry in the assessment of vertebral fractures in renal transplant patients

Low-power sensor front-end electronics with RFID communication capabilities for food logistic datalogging applications

Effects of implantation defects on the carrier concentration of 6H-SiC

Single-photon avalanche diode arrays for fast transients and adaptive optics

Defect-induced homogeneous amorphization of silicon: the role of defect structure and population

ANDREI ZENKEVICH AND YURI LEBEDINSKII Moscow Engineering Physics Institute-State university 115409 Moscow, Russian Federation

Size effects on the electrical activation of low-energy implanted B in Si

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