The project GraNitE is funded by MIUR in the framework of the European program "FET Flagship ERA-NET" (FLAG-ERA), which coordinates the integration of national/regional research into the work plans of the EU FET Flagship projects ("Graphene" and "Human Brain Project").

The aim of MANSiC project was to promote a multidisciplinary training network for young researchers based on the development of 3C-SiC technology. Indeed, this cubic polytype of SiC was for long set apart due to the lack of adequate substrate so that the heteroepitaxial layers were far from device quality. The research activity was focused on the development of a full technology based on high quality 3C-SiC material grown by members of this consortium, using non-conventional growth techniques developed by some of the partners.

The project NetFISiC (Training NETwork on Functional Interfaces for SiC) was a Marie-Curie Initial Training Network. The main scientific objective of NetFISiC was to provide Silicon Carbide material (of various polytypes) with improved and adequate functional interfaces for getting a step forward in electronic devices performance. Research efforts will be dedicated to solve the problems faced by important devices like MOSFETs and Schottky diodes. Fundamental research have been performed both on the growth aspect and on innovating devices.

The project Ambition Power operated in the field of Energy/Energy Saving within the national program PON “Ricerca e Competitività 2007-2013”. The project was focused in the field of power electronics, i.e., in a specific sector which include about 30% of the semiconductor world production.

The general objective of the project was the development of key enabling technologies for power devices and modules with a high energy efficiency, through the following main activities:

-Development of technologies and devices in SiC, GaN and advanced Si IGBTs

EMMA is a FP6 - ICT European project, grant agreemnet n. 33751

This project will investigate the feasibility of emerging new non-volatile memory concepts based on resistive-switching materials for enabling new mass-storage memory systems.

GOSSAMER, or “Gigascale Oriented Solid State flAsh Memory for EuRope” is a European Integrated ICT project carried out by a consortium of 13 partners and supported by the European Commission through the FP7 program.

The GOSSAMER project aims at the development of the technology for very high density Non Volatile Memories for mass storage applications down to the 22 nm technology node.

The aim of the European project LAST POWER  was to develop equipments, materials and processes for power devices applications based on wide band gap semiconductors (SiC and GaN). In particular, the target materials were 150mm 4H-SiC wafers and GaN heteroepitaxy on 150mm Si substrates. The process development was focused on switching devices (i.e., 4H-SiC MOSFETs and JFETs, normally-off GaN HEMTs) able to work up to 150°C. Hence, innovative packaging materials were also studied.