MAGWIRE: Magnetic Nanowires for High Density Non Volatile Memories

Information processing in classical von Neumann architectures is less efficient compared to biological counterparts when dealing with ill-posed problems and noisy data.

The MORE, or "Advanced Metal-Oxide heterostructures for nanoscale RERAM" project focuses on the synthesis and characterization of resistive switching properties of thin film- and nanowire- heterostructures, as building blocks for future nanodevices. In particular, Metal-transition metal Oxides- Metal (MOM) thin film and nanowire heterostructures are exploited as memory elements for ultra-scaled Resistive switching Random Access non-volatile Memories (ReRAMs).

MemoCiS  - COST Action IC1401 : “Memristors-Devices, Models, Circuits, Systems and Applications” (10/12/2014-9/12/2018).

COST IC1401 (MemoCIS) is the Action on "Memristors - Devices, Models, Circuits, Systems and Applications". The main objective of the Action is to form a European-wide scientific and technology knowledge platform, in order to instigate interdisciplinary interaction for the development of innovative memristor technology and methods, which are required for future self-learning hardware systems.