In the actual Power Devices market, 4H-SiC is the emerging material.

1 Optical lithography (Contact Person: Mario Alia)

2 e-beam lithography (EBL)

Light detection will be attempted by using Si and Ge quantum structures embedded in insulating matrices or by low-cost synthesized ZnO nanostructures.

The aim of this activity is the synthesis and characterization of Si and Ge nanostructures, mainly quantum dots, immersed in dielectric Si-based thin film matrixes (e.g. Si oxides and nitrides).

The use of transparent conductive oxides (TCO) is one of the most critical issues in several fields: photovoltaics, transparent electronics, smart windows, touch screens.

The demand for low voltage, low power, high performance and increased functionalities has issued severe challenges for the integration progress of nanoelectronic devices so new disruptive architectures with 3D schemes have been proposed.

It is well assessed that AlN-based (inorganic) flexible pressure sensors represent a highly competitive alternative to polymers-based piezoelectric devices, since, in spite of their relatively lower piezoelectric coefficients, they offer a number of advantages: inorganic piezo-materials do not ne

Graphene (Gr) has been widely investigated in the last years as channel material for high frequency electronics.