It is well assessed that AlN-based (inorganic) flexible pressure sensors represent a highly competitive alternative to polymers-based piezoelectric devices, since, in spite of their relatively lower piezoelectric coefficients, they offer a number of advantages: inorganic piezo-materials do not ne

Graphene (Gr) has been widely investigated in the last years as channel material for high frequency electronics.

Two-dimensional (2D) crystals beyond graphene are a new frontier in materials science that is currently having a tremendous impact on the nanotechnology of advanced materials.

The activity concerns the synthesis, fabrication and characterization of materials and solar cells based on innovative structures and advanced processes.

The theoretical activity of the unit of Agrate Brianza is mainly focused on the simulation of material and devices that can meet the needs of present and the forthcoming nano-electronic industry which may be based also on quantum processes

Among our main topics:

Gallium Nitride (GaN) and its related Al_xGa_1-xN ternary alloys have excellent properties (like a wide band gap, a high critical electric field and a high electron saturation velocity) making them suitable semiconductors for high power and high frequency de

The doping of semiconductors is a key element for the production of semiconductor devices, and it has been widely studied for bulk crystals.