2008 | IMM Container

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, S Schamm, Pierre-Eugène Coulon, M Fanciulli

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2411-2413

Origin: Microelectronic Engineering

Vertically stacked non-volatile memory devices–material considerations

M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, K Kopalko, R Jakieła, S Yatsunenko, E Przeździecka, P Kruszewski, N Huby, G Tallarida, S Ferrari

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2434-2438

Origin: Microelectronic Engineering

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

N Huby, G Tallarida, M Kutrzeba, S Ferrari, E Guziewicz, M Godlewski

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2442-2444

Origin: Microelectronic Engineering

Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography

E Katsia, G Tallarida, B Kutrzeba-Kotowska, S Ferrari, E Bundgaard, R Sondergaard, FC Krebs

2008-12-01

Biblio references: Volume: 9 Issue: 6 Pages: 1044-1050

Origin: ORGANIC ELECTRONICS

Dispersion and damping of gold surface plasmon

A Politano, V Formoso, G Chiarello

2008-12-01

Biblio references: Volume: 3 Issue: 4 Pages: 165

Origin: Plasmonics

Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

HL Lu, G Scarel, XL Li, M Fanciulli

2008-12-01

Biblio references: Volume: 310 Issue: 24 Pages: 5464-5468

Origin: Journal of Crystal Growth

The role of the amorphous phase in the re-crystallization process of cold-crystallized poly (ethylene terephthalate)

M Pieruccini, A Flores, U Nöchel, G Di Marco, N Stribeck, FJ Baltá Calleja

2008-12-01

Biblio references: Volume: 27 Issue: 4 Pages: 365-373

Origin: The European Physical Journal E

Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour

Fortunato Pezzimenti, Francesco G Della Corte, Roberta Nipoti

2008-12-01

Biblio references: Volume: 39 Issue: 12 Pages: 1594-1599

Origin: Microelectronics journal

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

G Molas, Marc Bocquet, J Buckley, H Grampeix, M Gély, JP Colonna, F Martin, P Brianceau, V Vidal, C Bongiorno, S Lombardo, G Pananakakis, G Ghibaudo, B De Salvo, S Deleonibus

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2393-2399

Origin: Microelectronic Engineering

Chemical vapor deposition of chalcogenide materials for phase-change memories

A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, M Longo, A Pirovano, Jan Siegel, W Gawelda, S Rushworth, C Giesen

2008-12-01

Biblio references: Volume: 85 Issue: 12 Pages: 2338-2341

Origin: Microelectronic Engineering

Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing

Vertically stacked non-volatile memory devices–material considerations

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography

Dispersion and damping of gold surface plasmon

Thin MnO and NiO films grown using atomic layer deposition from ethylcyclopentadienyl type of precursors

The role of the amorphous phase in the re-crystallization process of cold-crystallized poly (ethylene terephthalate)

Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

Chemical vapor deposition of chalcogenide materials for phase-change memories

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Units in Italy

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