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Magnetic response of Mn-doped amorphous porous Ge fabricated by ion-implantation

M Passacantando, L Ottaviano, V Grossi, A Verna, F D’Orazio, F Lucari, G Impellizzeri, F Priolo

2007-04-01

Biblio references: Volume: 257 Issue: 1-2 Pages: 365-368

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers

Liliana Caristia, Giuseppe Nicotra, Corrado Bongiorno, Nicola Costa, Sebastiano Ravesi, Salvo Coffa, Riccardo De Bastiani, Maria Grazia Grimaldi, Corrado Spinella

2007-04-01

Biblio references: Volume: 47 Issue: 4-5 Pages: 777-780

Origin: Microelectronics Reliability

Amorphization kinetics of Ge 2 Sb 2 Te 5 thin film induced by ion implantation

R De Bastiani, AM Piro, MG Grimaldi, E Rimini

2007-04-01

Biblio references: Volume: 257 Issue: 1-2 Pages: 572-576

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Effects of dopants on the amorphous-to-fcc transition in Ge 2 Sb 2 Te 5 thin films

S Privitera, E Rimini, C Bongiorno, A Pirovano, R Bez

2007-04-01

Biblio references: Volume: 257 Issue: 1-2 Pages: 352-354

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Optical characterization of liquid crystals by combined ellipsometry and half-leaky-guided-mode spectroscopy in the visible-near infrared range

G Abbate, V Tkachenko, A Marino, F Vita, M Giocondo, A Mazzulla, L De Stefano

2007-04-01

Biblio references: Volume: 101 Issue: 7 Pages: 073105

Origin: Journal of applied physics

Nano-graphene growth and texturing by Nd: YAG pulsed laser ablation of graphite on silicon

E Cappelli, S Orlando, V Morandi, M Servidori, C Scilletta

2007-04-01

Biblio references: Volume: 59 Issue: 1 Pages: 131

Origin: Journal of Physics: Conference Series

Development of a homoepitaxial technology for fabrication of X-and γ-ray detectors based on CdTe pin diodes

N Lovergine, M Traversa, P Paiano, I Farella, P Prete, A Cola, F Quaranta, AM Mancini

2007-04-01

Biblio references: Volume: 166 Pages: 262-265

Origin: Nuclear Physics B-Proceedings Supplements

A study of the growth of Lu 2 O 3 on Si (001) by synchrotron radiation photoemission and transmission electron microscopy

M Malvestuto, M Pedio, S Nannarone, G Pavia, G Scarel, M Fanciulli, F Boscherini

2007-04-01

Biblio references: Volume: 101 Issue: 7 Pages: 074104

Origin: Journal of applied physics

Amorphous–crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

D D’Angelo, AM Piro, S Mirabella, C Bongiorno, L Romano, A Terrasi, MG Grimaldi

2007-04-01

Biblio references: Volume: 257 Issue: 1-2 Pages: 270-274

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Towards enhanced performances in gas sensing: SnO 2 based nanocrystalline oxides application

G Neri, A Bonavita, G Rizzo, S Galvagno, N Pinna, M Niederberger, S Capone, P Siciliano

2007-03-26

Biblio references: Volume: 122 Issue: 2 Pages: 564-571

Origin: Sensors and Actuators B: Chemical

Magnetic response of Mn-doped amorphous porous Ge fabricated by ion-implantation

The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers

Amorphization kinetics of Ge 2 Sb 2 Te 5 thin film induced by ion implantation

Effects of dopants on the amorphous-to-fcc transition in Ge 2 Sb 2 Te 5 thin films

Optical characterization of liquid crystals by combined ellipsometry and half-leaky-guided-mode spectroscopy in the visible-near infrared range

Nano-graphene growth and texturing by Nd: YAG pulsed laser ablation of graphite on silicon

Development of a homoepitaxial technology for fabrication of X-and γ-ray detectors based on CdTe pin diodes

A study of the growth of Lu 2 O 3 on Si (001) by synchrotron radiation photoemission and transmission electron microscopy

Amorphous–crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

Towards enhanced performances in gas sensing: SnO 2 based nanocrystalline oxides application

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