2007 | IMM Container

A Estefania, Z Stefano, M Santiago, S Andrea, M Barbara, J Aritz, G David, E Ivan, GC Cardinali, JM Gómez, P Francisco, C Michelle, M Alessio, B Thomas, S Ilker

2007-01-01

Biblio references: Volume: 127 Pages: 2-7

Origin: Sensors and Actuators B, Chemical

HijikataY^ et al. MOS capacitors obtained by wet oxidation of n-type 4H-SiC preimplanted with nitrogen [j]

Poggi Af MoscatelliF

2007-01-01

Biblio references: Volume: 84 Issue: 12 Pages: 2804-2809

Origin: Microelectronic Engineering

ELECTRONIC TRANSPORT CALCULATION OF FINITE

A LA MAGNA, I DERETZIS

2007-01-01

Biblio references: Volume: 75 Pages: 422

Origin: Applied and Industrial Mathematics in Italy II: Selected Contributions from the 8th SIMAI Conference: Baia Samuele (Regusa), Italy, 22-26 May 2006

Scanning probe microscopy investigation of self‐organized perylenetetracarboxdiimide nanostructures at surfaces: structural and electronic properties

RNA interference in mammalian cells.

Role of the internal strain on the incomplete Si

Fabrication and characterization of zinc oxide based rib waveguide [6474-60]

A neural network approach to high energy cosmic rays mass identification at the Pierre Auger Observatory

Rydberg states with quantum Monte Carlo

Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography

Flexible tag microlab development: gas sensors integration in RFID flexible tags for food logistics

HijikataY^ et al. MOS capacitors obtained by wet oxidation of n-type 4H-SiC preimplanted with nitrogen [j]

ELECTRONIC TRANSPORT CALCULATION OF FINITE

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