Physics and technology of gallium nitride materials for power electronics

F. Roccaforte, P. Fiorenza, R. Lo Nigro, F. Giannazzo, G. Greco

Riv. Nuovo Cimento, Vol. 41 (2018) 625

Published online 17 December 2018

DOI: 10.1393/ncr/i2018-10154-x

ABSTRACT

A significant reduction of the global energy consumption can be achieved by the introduction of a next generation of energy efficient power devices based on new semiconductor technologies.
Gallium nitride (GaN) and related alloys have always been of interest for their applications to the light emitting diodes, and the invention of the blue LED was awarded with the Noble Prize in Physics in 2014.

Beyond that, the GaN outstanding physical and electronic properties make it a promising semiconductor also for high-power electronic devices, where it can enable to overcome the Si limits. However, there are still several hurdles, which hinder the full exploitation of this material.
This review paper aims at giving an overview on selected scientific problems related to the technology, with a special attention to the case of high electron mobility transistors.

chnology, with a special attention to the case of high electron mobility transistors.