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Surname: 
Fiorenza
Firstname: 
Patrick
Position: 
Staff
Profile: 
Researcher
Phone: 
+390955968247
Curriculum: 

Patrick Fiorenza received the M.Sc. in Physics and the PhD in Material Science from the University of Catania in 2003 and 2007, respectively. In 2005, he was visiting scientist at IMEC  (Belgium). Since 2011 he is Researcher at CNR-IMM. His research activity is mainly focused on carrier transport, trapping phenomena and reliability at Metal-Insulato-Semiconductor and Metal-Semiconductor interfaces in SiC and GaN. He has a recognized experience in characterization of advanced materials and devices by scanning probe microscopy.  He is co-author of more than 100 papers and three book chapters. He was member of the local organizing committee of Hetero-SiC-WASMPE 2009,  WOCSDICE2011 and ICSCRM 2015, and was involved in several European and national projects (NUOTO, NetFISiC , Last Power, Ambition Power). He was principal investigator for the CNR-IMM unit of the project GRIFONE (2015-2018) within the FlagERA call.

Source: 

Scientific Productions

Ivan Shtepliuk, Ivan G Ivanov, Tihomir Iakimov, Rositsa Yakimova, Anelia Kakanakova-Georgieva, Patrick Fiorenza, Filippo Giannazzo

Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC

Materials Science in Semiconductor Processing [Pergamon], Volume: 96 Pages: 145-152

F Giannazzo, Ivan Shtepliuk, Ivan Gueorguiev Ivanov, Tihomir Iakimov, A Kakanakova-Georgieva, E Schilirò, P Fiorenza, Rositsa Yakimova

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy.

Nanotechnology [IOP Publishing], Volume: 30 Issue: 28 Pages: 284003

M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, F Giannazzo, F Roccaforte

Effect of high temperature annealing (T> 1650° C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 274-279

Patrick Fiorenza, Marilena Vivona, Salvatore Di Franco, Emanuele Smecca, Salvatore Sanzaro, Alessandra Alberti, Mario Saggio, Fabrizio Roccaforte

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Materials Science in Semiconductor Processing [Pergamon], Volume: 93 Pages: 290-294

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

LA RIVISTA DEL NUOVO CIMENTO [Italian Physical Society], Volume: 41 Issue: 12 Pages: 625-681

Fabrizio Roccaforte, Patrick Fiorenza, Raffaella Lo Nigro, Filippo Giannazzo, Giuseppe Greco

Physics and technology of gallium nitride materials for power electronics

Riv. Nuovo Cim [], Volume: 41 Pages: 625-681

Patrick Fiorenza, Ferdinando Iucolano, Giuseppe Nicotra, Corrado Bongiorno, Ioannis Deretzis, Antonino La Magna, Filippo Giannazzo, Mario Saggio, Corrado Spinella, Fabrizio Roccaforte

Electron trapping at SiO 2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Nanotechnology [IOP Publishing], Volume: 29 Issue: 39 Pages: 395702

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ferdinando Iucolano, Ildiko Cora, Bela Pecz, Fabrizio Roccaforte

Barrier inhomogeneity of Ni Schottky contacts to bulk GaN

physica status solidi (a) [], Volume: 215 Issue: 9 Pages: 1700613

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon], Volume: 78 Pages: 38-42

Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, Ferdinando Iucolano, Raffaella Lo Nigro, Fabrizio Roccaforte

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics [IOP Publishing], Volume: 57 Issue: 5 Pages: 050307

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Giuseppe Nicotra, Corrado Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte

Temperature-dependent Fowler-Nordheim electron barrier height in SiO 2/4H-SiC MOS capacitors

Materials Science in Semiconductor Processing [Pergamon],

S Petralia, T Cosentino, F Sinatra, M Favetta, P Fiorenza, C Bongiorno, EL Sciuto, S Conoci, S Libertino

Silicon Nitride Surfaces as Active Substrate for Electrical DNA Biosensors

Sensors and Actuators B: Chemical [Elsevier], Volume: 252 Pages: 492-502

Giuseppe Greco, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Filippo Giannazzo, Fabrizio Roccaforte

Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: correlating device behavior with nanoscale interfaces properties

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 40 Pages: 35383-35390

R Anzalone, G Litrico, N Piluso, R Reitano, A Alberti, P Fiorenza, S Coffa, F La Via

Carbonization and transition layer effects on 3C-SiC film residual stress

Journal of Crystal Growth [North-Holland], Volume: 473 Pages: 11-19

Filippo Giannazzo, Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Conductive Atomic Force Microscopy of Two-Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2

Conductive Atomic Force Microscopy: Applications in Nanomaterials [John Wiley & Sons],

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO 2 as Gate Insulator

IEEE Transactions on Electron Devices [IEEE], Volume: 64 Issue: 7 Pages: 2893-2899

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator

IEEE Transactions on Electron Devices [IEEE],

Marilena Vivona, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

Materials Science Forum [Trans Tech Publications Ltd.], Volume: 897 Pages: 331

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600365

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [], Volume: 214 Issue: 4 Pages: 1600366

Gabriele Fisichella, Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Sebastiano Ravesi, Filippo Giannazzo

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

ACS applied materials & interfaces [American Chemical Society], Volume: 9 Issue: 8 Pages: 7761-7771

Emanuela Schilirò, Patrick Fiorenza, Giuseppe Greco, Fabrizio Roccaforte, Raffaella Lo Nigro

Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [AVS], Volume: 35 Issue: 1 Pages: 01B140

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [AVS], Volume: 35 Issue: 1 Pages: 01A101

Giuseppe Greco, Filippo Giannazzo, Patrick Fiorenza, Salvatore Di Franco, Alessandra Alberti, Ildikó Cora, Béla Pécz

Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE [Wiley], Volume: 2017 Pages: 1-6

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al 2 O 3 thin films grown by Atomic Layer Deposition

Thin Solid Films [Elsevier], Volume: 617 Pages: 138-142

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

physica status solidi (a) [],

Emanuela Schilirò, Raffaella Lo Nigro, Patrick Fiorenza, Fabrizio Roccaforte

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP Advances [AIP Publishing], Volume: 6 Issue: 7 Pages: 075021

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Fabrizio Roccaforte

Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters [AIP Publishing], Volume: 109 Issue: 1 Pages: 012102

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Fabrizio Roccaforte

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H–SiC interfaces

Nanotechnology [IOP Publishing], Volume: 27 Issue: 31 Pages: 315701

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

Laminated Al 2 O 3–HfO 2 layers grown by atomic layer deposition for microelectronics applications

Thin Solid Films [Elsevier], Volume: 601 Pages: 68-72

M Vivona, P Fiorenza, T Sledziewski, M Krieger, T Chassagne, M Zielinski, F Roccaforte

Electrical properties of SiO 2/SiC interfaces on 2°-off axis 4H-SiC epilayers

Applied Surface Science [North-Holland], Volume: 364 Pages: 892-895

E Schilirò, P Fiorenza, S Di Franco, C Bongiorno, M Saggio, F Roccaforte, R Lo Nigro

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

physica status solidi (a) [],

R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, S Di Franco, F La Via

Interface state density evaluation of high quality hetero-epitaxial 3C–SiC (001) for high-power MOSFET applications

Materials Science and Engineering: B [Elsevier], Volume: 198 Pages: 14-19

Raffaella Lo Nigro, Gabriele Fisichella, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

An insight into the epitaxial nanostructures of NiO and CeO 2 thin film dielectrics for AlGaN/GaN heterostructures

Materials Chemistry and Physics [Elsevier], Volume: 162 Pages: 461-468

Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Cristina Tudisco, Guglielmo Guido Condorelli, Salvatore Di Franco, Fabrizio Roccaforte, Raffaella Lo Nigro

Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 12 Issue: 7 Pages: 980-984

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

Applied Physics Letters [AIP Publishing], Volume: 106 Issue: 14 Pages: 142903

Gabriele Fisichella, Giuseppe Greco, Patrick Fiorenza, Salvatore Di Franco, Fabrizio Roccaforte, Filippo Giannazzo

Current mapping in graphene contacts to AlGaN/GaN heterostructures

Nanoscience and Nanometrology [], Volume: 1 Pages: 1-7

Patrick Fiorenza, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters [AIP Publishing], Volume: 105 Issue: 14 Pages: 142108

Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, Raffaella Lo Nigro, Filippo Giannazzo, Alfonso Patti, Mario Saggio

Challenges for energy efficient wide band gap semiconductor power devices

physica status solidi (a) [], Volume: 211 Issue: 9 Pages: 2063-2071

Raffaella Lo Nigro, Sergio Battiato, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Graziella Malandrino

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

Thin Solid Films [Elsevier], Volume: 563 Pages: 50-55

F Roccaforte, P Fiorenza, G Greco, M Vivona, R Lo Nigro, F Giannazzo, A Patti, M Saggio

Recent advances on dielectrics technology for SiC and GaN power devices

Applied Surface Science [North-Holland], Volume: 301 Pages: 9-18

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

P Fiorenza, LK Swanson, M Vivona, F Giannazzo, C Bongiorno, A Frazzetto, F Roccaforte

Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3

Applied Physics A [Springer Berlin Heidelberg], Volume: 115 Issue: 1 Pages: 333-339

Giuseppe Greco, Patrick Fiorenza, Filippo Giannazzo, Alessandra Alberti, Fabrizio Roccaforte

Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology [IOP Publishing], Volume: 25 Issue: 2 Pages: 025201

P Fiorenza, F Giannazzo, M Vivona, A La Magna, F Roccaforte

SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters [AIP], Volume: 103 Issue: 15 Pages: 153508

Raffaella Lo Nigro, Patrick Fiorenza, Maria R Catalano, Gabriele Fisichella, Fabrizio Roccaforte, Graziella Malandrino

Binary and complex oxide thin films for microelectronic applications: An insight into their growth and advanced nanoscopic investigation

Surface and Coatings Technology [Elsevier], Volume: 230 Pages: 152-162

P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 103 Issue: 11 Pages: 112905

F Giannazzo, G Fisichella, R Lo Nigro, P Fiorenza, S Di Franco, A Marino, N Piluso, E Rimini, F Roccaforte

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate‐supported graphene

physica status solidi c [WILEY‐VCH Verlag], Volume: 10 Issue: 7‐8 Pages: 1188-1192

Patrick Fiorenza, Filippo Giannazzo, Lukas K Swanson, Alessia Frazzetto, Simona Lorenti, Mario S Alessandrino, Fabrizio Roccaforte

A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 249-254

Gabriele Fisichella, Salvatore Di Franco, Patrick Fiorenza, Raffaella Lo Nigro, Fabrizio Roccaforte, Cristina Tudisco, Guido G Condorelli, Nicolò Piluso, Noemi Spartà, Stella Lo Verso, Corrado Accardi, Cristina Tringali, Sebastiano Ravesi, Filippo Giannazzo

Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 4 Issue: 1 Pages: 234-242

Filippo Giannazzo, Antonino Scuderi, Giuseppe Greco, Patrick Fiorenza, Raffaela Lo Nigro, Michal Leszczyński, Fabrizio Roccaforte

Nanoscale Probing of Interfaces in GaN for Devices Applications

ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 3 Pages: 439-446

Rainer Schmidt, Shubhra Pandey, Patrick Fiorenza, Derek C Sinclair

Non-stoichiometry in “CaCu 3 Ti 4 O 12”(CCTO) ceramics

RSC Advances [Royal Society of Chemistry], Volume: 3 Issue: 34 Pages: 14580-14589

Fabrizio Roccaforte, Patrick Fiorenza, Filippo Giannazzo

Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 8 Pages: N3006-N3011

LK Swanson, P Fiorenza, F Giannazzo, A Frazzetto, F Roccaforte

Correlating macroscopic and nanoscale electrical modifications of SiO2/4H-SiC interfaces upon post-oxidation-annealing in N2O and POCl3

Applied Physics Letters [AIP], Volume: 101 Issue: 19 Pages: 193501

Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Raffaella Lo Nigro, Fabrizio Roccaforte

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 101 Issue: 17 Pages: 172901

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics [AIP], Volume: 112 Issue: 8 Pages: 084501

F Roccaforte, A Frazzetto, G Greco, F Giannazzo, P Fiorenza, R Lo Nigro, M Saggio, M Leszczyński, P Pristawko, V Raineri

Critical issues for interfaces to p-type SiC and GaN in power devices

Applied Surface Science [North-Holland], Volume: 258 Issue: 21 Pages: 8324-8333

Maria R Catalano, Graziella Malandrino, Corrado Bongiorno, Roberta G Toro, Patrick Fiorenza, Romain Bodeux, Jerome Wolfman, Monique Gervais, Cécile Autret Lambert, François Gervais, Raffaella Lo Nigro

CaCu3Ti4O12 thin films on conductive oxide electrode: A comparative study between chemical and physical vapor deposition routes

Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2-3 Pages: 1108-1115

Maria R Catalano, Graziella Malandrino, Corrado Bongiorno, Roberta G Toro, Patrick Fiorenza, Romain Bodeux, Jerome Wolfman, Monique Gervais, Cécile Autret Lambert, François Gervais, Raffaella Lo Nigro

CaCu 3 Ti 4 O 12 thin films on conductive oxide electrode: A comparative study between chemical and physical vapor deposition routes

Materials Chemistry and Physics [Elsevier], Volume: 133 Issue: 2 Pages: 1108-1115

Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Vito Raineri, Graziella Malandrino, Raffaella Lo Nigro

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied Physics Letters [AIP], Volume: 100 Issue: 6 Pages: 063511

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri

Scanning probe microscopy on heterogeneous CaCu 3 Ti 4 O 12 thin films

Nanoscale research letters [], Volume: 6 Issue: 1 Pages: 118

Jens Eriksson, Fabrizio Roccaforte, Sergey Reshanov, Stefano Leone, Filippo Giannazzo, Raffaella LoNigro, Patrick Fiorenza, Vito Raineri

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

Nanoscale research letters [Springer New York], Volume: 6 Issue: 1 Pages: 120

Jens Eriksson, Fabrizio Roccaforte, Ming-Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at< formula>< roman> SiO< inf> 2-3< roman> C-< roman> S i C Interfaces

AIP Conference Proceedings [American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States 2 Huntington Quadrangle Melville NY 11747-4502 United States], Volume: 1292 Issue: 1

A Frazzetto, F Giannazzo, P Fiorenza, V Raineri, F Roccaforte

Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied physics letters [AIP], Volume: 99 Issue: 7 Pages: 072117

Patrick Fiorenza, Vito Raineri, Stefan G Ebbinghaus, Raffaella Lo Nigro

CaCu 3 Ti 4 O 12 single crystals: insights on growth and nanoscopic investigation

CrystEngComm [Royal Society of Chemistry], Volume: 13 Issue: 11 Pages: 3900-3904

Patrick Fiorenza, Vito Raineri, Matthew C Ferrarelli, Derek C Sinclair, Raffaella Lo Nigro

Nanoscale electrical probing of heterogeneous ceramics: the case of giant permittivity calcium copper titanate (CaCu 3 Ti 4 O 12)

Nanoscale [Royal Society of Chemistry], Volume: 3 Issue: 3 Pages: 1171-1175

Jens Eriksson, Fabrizio Roccaforte, Patrick Fiorenza, Ming-Hung Weng, Filippo Giannazzo, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Vito Raineri

Nanoscale probing of dielectric breakdown at SiO 2/3 C-SiC interfaces

Journal of Applied Physics [AIP], Volume: 109 Issue: 1 Pages: 013707

Jens Eriksson, Fabrizio Roccaforte, Ming‐Hung Weng, Jean Lorenzzi, Nikoletta Jegenyes, Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Impact of Morphological Features on the Dielectric Breakdown at SiO 2/3 C‐SiC Interfaces

AIP Conference Proceedings [AIP], Volume: 1292 Issue: 1 Pages: 47-50

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Graziella Malandrino, Roberta G Toro, Maria R Catalano

High capacitance density by CaCu 3 Ti 4 O 12 thin films

Journal of Applied Physics [AIP], Volume: 108 Issue: 7 Pages: 074103

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Stephan Krohns, Peter Lunkenheimer, Alois Loidl, Stefan G Ebbinghaus, Matthew C Ferrarelli, Derek C Sinclair, Anthony R West

Detection of heterogeneities in single-crystal CaCu3Ti4O12 using Conductive Atomic Force Microscopy

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012018

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Rainer Schmidt, Derek C Sinclair

Probing dielectric ceramics surface at sub-micrometer scale

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012038

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Andrew G Mould, Derek C Sinclair

Probing heterogeneity in ptcr-BaTiO3 thermistors by local probe electrical measurements

IOP Conference Series: Materials Science and Engineering [IOP Publishing], Volume: 8 Issue: 1 Pages: 012037

Patrick Fiorenza, Raffaella Lo Nigro, Pietro Delugas, Vito Raineri, Andrew G Mould, Derek C Sinclair

Direct imaging of the core-shell effect in positive temperature coefficient of resistance-BaTiO 3 ceramics

Applied Physics Letters [AIP], Volume: 95 Issue: 14 Pages: 142904

Raffaella Lo Nigro, Roberta G Toro, Maria Rita Catalano, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

CaCu3Ti4O12 Thin Films for Capacitive Applications: MOCVD Synthesis and Nanoscopic/Microscopic Characterization

ECS Transactions [The Electrochemical Society], Volume: 25 Issue: 8 Pages: 135-142

A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, C Bongiorno, A La Magna, F La Via

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3 C-SiC films

Applied Physics Letters [AIP], Volume: 95 Issue: 11 Pages: 111905

P Fiorenza, R Lo Nigro, A Sciuto, P Delugas, V Raineri, RG Toro, MR Catalano, G Malandrino

Perovskite CaCu 3 Ti 4 O 12 thin films for capacitive applications: From the growth to the nanoscopic imaging of the permittivity

Journal of Applied Physics [AIP], Volume: 105 Issue: 6 Pages: 061634

Raffaella Lo Nigro, Patrick Fiorenza, Vito Raineri

Conductive Atomic Force Microscopy and Scanning Impedance Microscopy for the Imaging of Electrical Domain in CaCu 3 Ti 4 O 12 Perovskite Oxide

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1232

Patrick Fiorenza, Raffaella Lo Nigro, Corrado Bongiorno, Vito Raineri, Matthew C Ferarrelli, Derek C Sinclair, Anthony R West

Localized electrical characterization of the giant permittivity effect in Ca Cu 3 Ti 4 O 12 ceramics

Applied Physics Letters [AIP], Volume: 92 Issue: 18 Pages: 182907

M Camarda, A La Magna, P Fiorenza, F Giannazzo, F La Via

Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study

Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 5 Pages: 971-975

Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 135

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

3C-SiC Heteroepitaxy on (100),(111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 243

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: Influence of Process Pressure

Materials Science Forum [], Volume: 768 Issue: 600 Pages: 211

Raffaella Lo Nigro, Graziella Malandrino, Patrick Fiorenza, Ignazio L Fragalà

Template-free and seedless growth of Pt nanocolumns: imaging and probing their nanoelectrical properties

ACS nano [American Chemical Society], Volume: 1 Issue: 3 Pages: 183-190

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

Effects of high temperature annealing on MOCVD grown CaCu 3 Ti 4 O 12 films on LaAlO 3 substrates

Surface and Coatings Technology [Elsevier], Volume: 201 Issue: 22 Pages: 9243-9247

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

Effects of high temperature annealing on MOCVD grown CaCu3Ti4O12 films on LaAlO3 substrates

Surface and Coatings Technology [Elsevier], Volume: 201 Issue: 22-23 Pages: 9243-9247

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

Chemical stability of CaCu 3 Ti 4 O 12 thin films grown by MOCVD on different substrates

Thin Solid Films [Elsevier], Volume: 515 Issue: 16 Pages: 6470-6473

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

Chemical stability of CaCu3Ti4O12 thin films grown by MOCVD on different substrates

Thin Solid Films [Elsevier], Volume: 515 Issue: 16 Pages: 6470-6473

P Fiorenza, R Lo Nigro, V Raineri, S Lombardo, RG Toro, G Malandrino, IL Fragala

Defects induced anomalous breakdown kinetics in Pr 2 O 3 by micro-and nano-characterization

Microelectronics Reliability [Pergamon], Volume: 47 Issue: 4 Pages: 640-644

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Patrick Fiorenza, Vito Raineri

CaCu3Ti4O12, a Novel Material for Capacitive Applications: Thin Film Growth and Characterization

ECS Transactions [The Electrochemical Society], Volume: 6 Issue: 3 Pages: 385-395

P Fiorenza, R Lo Nigro, V Raineri, S Lombardo, RG Toro, Graziella Malandrino, IL Fragala

Defects induced anomalous breakdown kinetics in Pr2O3 by micro-and nano-characterization

Microelectronics Reliability [Pergamon], Volume: 47 Issue: 4-5 Pages: 640-644

Sebania Libertino, Manuela Fichera, Venera Aiello, Giuliana Statello, Patrick Fiorenza, Fulvia Sinatra

Experimental characterization of proteins immobilized on Si-based materials

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 468-473

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Dario Salinas

Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy

Microelectronic engineering [Elsevier], Volume: 84 Issue: 3 Pages: 441-445

P Fiorenza, R Lo Nigro, V Raineri, D Salinas

Chapter 3-SiC Characterization and Theory-3.3 Defects-Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC

Materials Science Forum [Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-], Volume: 556557 Pages: 501-504

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Vito Raineri, Patrick Fiorenza

Praseodymium based high-k dielectrics grown on Si and SiC substrates

Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 6 Pages: 1073-1078

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà, Maria Losurdo, Michelaria M Giangregorio, Giovanni Bruno, Vito Raineri, Patrick Fiorenza

Calcium Copper− Titanate Thin Film Growth: Tailoring of the Operational Conditions through Nanocharacterization and Substrate Nature Effects

The Journal of Physical Chemistry B [American Chemical Society], Volume: 110 Issue: 35 Pages: 17460-17467

Patrick Fiorenza, Wouter Polspoel, Wilfried Vandervorst

Conductive atomic force microscopy studies of thin Si O 2 layer degradation

Applied physics letters [AIP], Volume: 88 Issue: 22 Pages: 222104

Patrick Fiorenza, Vito Raineri

Reliability of thermally oxidized Si O 2∕ 4 H-Si C by conductive atomic force microscopy

Applied physics letters [AIP], Volume: 88 Issue: 21 Pages: 212112

Rg Toro, G Malandrino, Il Fragala, V Raineri, P Fiorenza

Praseodymium based high-k dielectrics grown on Si and SiC substrates

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING [], Volume: 9 Issue: 6 Pages: 1073-1078

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà

Breakdown kinetics of Pr 2 O 3 films by conductive-atomic force microscopy

Applied Physics Letters [AIP], Volume: 87 Issue: 23 Pages: 231913

P Fiorenza, R Lo Nigro, V Raineri, S Lombardo, RG Toro, G Malandrino, IL Fragalà

From micro-to nanotransport properties in Pr 2 O 3-based thin layers

Journal of applied physics [AIP], Volume: 98 Issue: 4 Pages: 044312

Raffaella Lo Nigro, Roberta G Toro, Graziella Malandrino, Patrick Fiorenza, Vito Raineri, Ignazio L Fragala

Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films

Materials Science and Engineering: B [Elsevier], Volume: 118 Issue: 1-3 Pages: 117-121

Raffaella LO NIGRO, Roberta G TORO, Graziella MALANDRINO, Patrick FIORENZA, Vito RAINERI, Ignazio L FRAGALA

Effects of deposition temperature on the microstructural and electrical properties of praseodymium oxide-based films

Materials science & engineering. B, Solid-state materials for advanced technology [Elsevier], Volume: 118 Issue: 1-3 Pages: 112-116

F Roccaforte, G Greco, P Fiorenza

Processing Issues in SiC and GaN Power Devices Technology: The Cases of 4H-SiC Planar MOSFET and Recessed Hybrid GaN MISHEMT

2018 International Semiconductor Conference (CAS) [IEEE], Pages: 7-16

Patrick Fiorenza, Ferdinando Iucolano, Mario Saggio, Fabrizio Roccaforte

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 285-288

Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

Temperature-Dependence Study of the Gate Current SiO2/4H-SiC MOS Capacitors

Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 473-476

Nicolò Piluso, Andrea Severino, Ruggero Anzalone, Maria Ausilia di Stefano, Enzo Fontana, Marco Salanitri, Simona Lorenti, Alberto Campione, Patrick Fiorenza, Francesco La Via

Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer

Materials Science Forum [Trans Tech Publications], Volume: 924 Pages: 84-87

Patrick Fiorenza, Antonino La Magna, Marilena Vivona, Filippo Giannazzo, Fabrizio Roccaforte

Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements

Materials Science Forum [Trans Tech Publications], Volume: 897 Pages: 123-126

P Fiorenza, A La Magna, M Vivona, F Giannazzo, F Roccaforte

Anomalous Fowler-Nordheim tunneling through SiO 2/4H-SiC barrier investigated by temperature and time dependent gate current measurements

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Marilena Vivona, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

Properties of SiO 2/4H-SiC interfaces with an oxide deposited by a high-temperature process

Silicon Carbide & Related Materials (ECSCRM), European Conference on [IEEE], Pages: 1-1

Ruggero Anzalone, Marco Salanitri, Simona Lorenti, Alberto Campione, Nicolò Piluso, Francesco La Via, Patrick Fiorenza, Cinzia M Marcellino, G Arena, Salvatore Coffa

Hydrogen Flux Influence on Homo-Epitaxial 4H-SiC Doping Concentration Profile for High Power Application

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 197-200

Ruggero Anzalone, Nicolò Piluso, Riccardo Reitano, Alessandra Alberti, Patrick Fiorenza, Marco Salanitri, Andrea Severino, Simona Lorenti, G Arena, Salvatore Coffa, Francesco La Via

Voids-free 3C-SiC/Si interface for high quality epitaxial layer

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 159-162

Patrick Fiorenza, Giuseppe Greco, Ferdinando Iucolano, Antonino Parisi, Santo Reina, Alfonso Patti, Fabrizio Roccaforte

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 1178-1181

Patrick Fiorenza, Salvatore Di Franco, Filippo Giannazzo, Simone Rascunà, Mario Saggio, Fabrizio Roccaforte

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 701-704

Marilena Vivona, Patrick Fiorenza, Tomasz Sledziewski, Alexandra Gkanatsiou, Michael Krieger, Thierry Chassagne, Marcin Zielinski, Fabrizio Roccaforte

Processing and characterization of MOS capacitors fabricated on 2-off axis 4H-SiC epilayers

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 663-666

Marilena Vivona, Patrick Fiorenza, Salvatore Di Franco, Claude Marcandella, Marc Gaillardin, Sylvain Girard, Fabrizio Roccaforte

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 659-662

Emanuela Schilirò, Salvatore Di Franco, Patrick Fiorenza, Corrado Bongiorno, Hassan Gargouri, Mario Saggio, Raffaella Lo Nigro, Fabrizio Roccaforte

Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 685-688

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Fabrizio Roccaforte

Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O

Materials Science Forum [Trans Tech Publications], Volume: 858 Pages: 705-708

Francesco La Via, Nicolo’ Piluso, Patrick Fiorenza, Marco Mauceri, Carmelo Vecchio, Antonino Pecora, Danilo Crippa

Epitaxial Growth on 150 mm 2° off Wafers

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 157-160

Ruggero Anzalone, Stefania Privitera, Alessandra Alberti, Nicolo’ Piluso, Patrick Fiorenza, Francesco La Via

Electrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC (001) for MOSFET Applications

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 773-776

P Fiorenza, Marilena Vivona, LK Swanson, Filippo Giannazzo, C Bongiorno, S Di Franco, S Lorenti, A Frazzetto, Thierry Chassagne, Fabrizio Roccaforte

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 143-147

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Giuseppe Nicotra, Corrado Spinella, Gabriele Fisichella, Patrick Fiorenza, Rositza Yakimova, Fabrizio Roccaforte

Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces

Materials Science Forum [Trans Tech Publications], Volume: 806 Pages: 103-107

Mario Saggio, Alfio Guarnera, Edoardo Zanetti, Simone Rascunà, Alessia Frazzetto, Dario Salinas, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte

Industrial approach for next generation of power devices based on 4H-SiC.

Materials Science Forum [Trans Tech Publications], Volume: 821 Pages: 660-666

P Fiorenza, G Greco, M Vivona, F Giannazzo, R Lo Nigro, F Roccaforte

Nanoscale reliability aspects of insulator onto wide band gap compounds

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 62-65

Raffaella Lo Nigro, Emanuela Schilirò, Cristina Tudisco, Guglielmo G Condorelli, Patrick Fiorenza, Hassan Gargouri, Fabrizio Roccaforte

Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates

2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 112-115

Filippo Giannazzo, Patrick Fiorenza, Mario Saggio, Fabrizio Roccaforte

Nanoscale Characterization of SiC Interfaces and Devices

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 407-413

Patrick Fiorenza, Lukas K Swanson, Marilena Vivona, Filippo Giannazzo, Corrado Bongiorno, Simona Lorenti, Alessia Frazzetto, Fabrizio Roccaforte

Characterization of SiO2/SiC interfaces annealed in N2O or POCl3

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 623-626

Massimo Camarda, Stefania Privitera, Ruggero Anzalone, Nicolò Piluso, Patrick Fiorenza, Alessandra Alberti, Giovanna Pellegrino, Antonino La Magna, Francesco La Via, Carmelo Vecchio, Marco Mauceri, Grazia Litrico, Antonino Pecora, Danilo Crippa

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications

Materials Science Forum [Trans Tech Publications], Volume: 778 Pages: 95-98

Patrick Fiorenza, Alessia Frazzetto, Lukas K Swanson, Filippo Giannazzo, Fabrizio Roccaforte

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 699-702

Massimo Camarda, Andrea Canino, Patrick Fiorenza, Andrea Severino, Ruggero Anzalone, Stefania Privitera, Antonino La Magna, Francesco La Via, Carmelo Vecchio, Marco Mauceri, Grazia Litrico, Antonino Pecora, Danilo Crippa

Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 229-234

Lukas K Swanson, Patrick Fiorenza, Filippo Giannazzo, Fabrizio Roccaforte

Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO2/4H-SiC interfaces

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 719-722

Raffaella Lo Nigro, Giuseppe Greco, L Swanson, G Fisichella, Patrick Fiorenza, Filippo Giannazzo, S Di Franco, C Bongiorno, A Marino, G Malandrino, Fabrizio Roccaforte

Potentialities of nickel oxide as dielectric for GaN and SiC devices

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 777-780

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Salvatore di Franco, Nicolò Piluso, Patrick Fiorenza, Fabrizio Roccaforte, Patrick Schmid, Wilfried Lerch, Rositza Yakimova

Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001)

Materials Science Forum [Trans Tech Publications], Volume: 740 Pages: 113-116

Massimo Camarda, Andrea Canino, Patrick Fiorenza, Corrado Bongiorno, Andrea Severino, Vito Raineri, Antonino La Magna, Francesco La Via, Marco Mauceri, Giuseppe Abbondanza, Antonino Pecora, Danilo Crippa

Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films

Materials Science Forum [Trans Tech Publications], Volume: 717 Pages: 149-152

Massimo Camarda, Andrea Severino, Patrick Fiorenza, Vito Raineri, S Scalese, Corrado Bongiorno, Antonino La Magna, Francesco La Via, Marco Mauceri, Danilo Crippa

On the “step bunching” phenomena observed on etched and homoepitaxially grown 4H silicon carbide

Materials Science Forum [Trans Tech Publications], Volume: 679 Pages: 358-361

Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Patrick Fiorenza, Jean Lorenzzi, Gabriel Ferro, Vito Raineri

Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy

Materials Science Forum [Trans Tech Publications], Volume: 645 Pages: 833-836

Andrea Severino, Christopher L Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E Saddow

Growth of 3C-SiC on Si: influence of process pressure

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 211-214

Massimo Camarda, Antonino La Magna, Patrick Fiorenza, Gaetano Izzo, Francesco La Via

Theoretical Monte Carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 135-138

Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

3C-SiC Heteroepitaxy on (100),(111) and (110) Si using Trichlorosilane (TCS) as the Silicon Precursor.

Materials Science Forum [Trans Tech Publications], Volume: 600 Pages: 243-246

Vito Raineri, Patrick Fiorenza, Raffaella Lo Nigro, Derek C Sinclair

Nanoscale Imaging of CaCu3Ti4O12 Dielectric Properties: The Role of Surface Defects

Solid State Phenomena [Trans Tech Publications], Volume: 131 Pages: 443-448

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Dario Salinas

Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC

Materials science forum [Trans Tech Publications], Volume: 556 Pages: 501-504

S Libertino, V Aiello, P Fiorenza, M Fichera, A Scandurra, F Sinatra

New method for the detection of enzyme immobilized on Si-based glucose Biosensors

SENSORS, 2006 IEEE [IEEE], Pages: 478-481

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo, Roberta G Toro, Graziella Malandrino, Ignazio L Fragalà

Electron Transport and Dielectric Breakdown Kinetics in Pr2O3 High K Films

Advances in Science and Technology [Trans Tech Publications], Volume: 46 Pages: 21-26

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo

Current transport by defects in Pr2O3 high k films

Solid State Phenomena [Trans Tech Publications], Volume: 108 Pages: 717-722

Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri

Colossal permittivity in advanced functional heterogeneous materials: the relevance of the local measurements at submicron scale

Scanning Probe Microscopy in Nanoscience and Nanotechnology [Springer, Berlin, Heidelberg], Pages: 613-646

Filippo Giannazzo, Patrick Fiorenza, Vito Raineri

Carrier transport in advanced semiconductor materials

Applied Scanning Probe Methods X [Springer, Berlin, Heidelberg], Pages: 63-103